NL7015756A - - Google Patents

Info

Publication number
NL7015756A
NL7015756A NL7015756A NL7015756A NL7015756A NL 7015756 A NL7015756 A NL 7015756A NL 7015756 A NL7015756 A NL 7015756A NL 7015756 A NL7015756 A NL 7015756A NL 7015756 A NL7015756 A NL 7015756A
Authority
NL
Netherlands
Application number
NL7015756A
Other versions
NL151911B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7015756A publication Critical patent/NL7015756A/xx
Publication of NL151911B publication Critical patent/NL151911B/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
NL707015756A 1969-10-27 1970-10-27 Werkwijze voor het via een reactie in de dampfase epitaxiaal doen groeien van een al dan niet gedoteerde gaas1-*p*-laag op een onderlaag en door toepassing van deze werkwijze verkregen gevormd voortbrengsel. NL151911B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8523569A JPS497993B1 (enExample) 1969-10-27 1969-10-27

Publications (2)

Publication Number Publication Date
NL7015756A true NL7015756A (enExample) 1971-04-29
NL151911B NL151911B (nl) 1977-01-17

Family

ID=13852884

Family Applications (1)

Application Number Title Priority Date Filing Date
NL707015756A NL151911B (nl) 1969-10-27 1970-10-27 Werkwijze voor het via een reactie in de dampfase epitaxiaal doen groeien van een al dan niet gedoteerde gaas1-*p*-laag op een onderlaag en door toepassing van deze werkwijze verkregen gevormd voortbrengsel.

Country Status (3)

Country Link
JP (1) JPS497993B1 (enExample)
GB (1) GB1308790A (enExample)
NL (1) NL151911B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4738272A (en) * 1984-05-21 1988-04-19 Mcconnell Christopher F Vessel and system for treating wafers with fluids
US4740249A (en) * 1984-05-21 1988-04-26 Christopher F. McConnell Method of treating wafers with fluid
US4633893A (en) * 1984-05-21 1987-01-06 Cfm Technologies Limited Partnership Apparatus for treating semiconductor wafers
US4577650A (en) * 1984-05-21 1986-03-25 Mcconnell Christopher F Vessel and system for treating wafers with fluids
US4856544A (en) * 1984-05-21 1989-08-15 Cfm Technologies, Inc. Vessel and system for treating wafers with fluids
JPH01123133A (ja) * 1987-11-09 1989-05-16 Hitachi Ltd 分光光度計
US6136724A (en) * 1997-02-18 2000-10-24 Scp Global Technologies Multiple stage wet processing chamber

Also Published As

Publication number Publication date
JPS497993B1 (enExample) 1974-02-23
GB1308790A (en) 1973-03-07
NL151911B (nl) 1977-01-17

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