NL7015610A - - Google Patents

Info

Publication number
NL7015610A
NL7015610A NL7015610A NL7015610A NL7015610A NL 7015610 A NL7015610 A NL 7015610A NL 7015610 A NL7015610 A NL 7015610A NL 7015610 A NL7015610 A NL 7015610A NL 7015610 A NL7015610 A NL 7015610A
Authority
NL
Netherlands
Application number
NL7015610A
Other versions
NL172388B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8535869A external-priority patent/JPS5123854B1/ja
Priority claimed from JP8707269A external-priority patent/JPS5754942B1/ja
Application filed filed Critical
Publication of NL7015610A publication Critical patent/NL7015610A/xx
Publication of NL172388B publication Critical patent/NL172388B/xx

Links

Classifications

    • H10P14/6324
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/022Anodisation on selected surface areas
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/04Anodisation of aluminium or alloys based thereon
    • H10P14/6314
    • H10P14/665
    • H10P14/69391
    • H10P95/00
    • H10W20/40

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
NLAANVRAGE7015610,A 1969-10-25 1970-10-24 Werkwijze voor het vormen van elektrisch geleidende banen op het oppervlak van een drager. NL172388B (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8535869A JPS5123854B1 (cg-RX-API-DMAC10.html) 1969-10-25 1969-10-25
JP8707269A JPS5754942B1 (cg-RX-API-DMAC10.html) 1969-10-30 1969-10-30

Publications (2)

Publication Number Publication Date
NL7015610A true NL7015610A (cg-RX-API-DMAC10.html) 1971-04-27
NL172388B NL172388B (nl) 1983-03-16

Family

ID=26426376

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7015610,A NL172388B (nl) 1969-10-25 1970-10-24 Werkwijze voor het vormen van elektrisch geleidende banen op het oppervlak van een drager.

Country Status (7)

Country Link
US (1) US3741880A (cg-RX-API-DMAC10.html)
DE (2) DE2066108C2 (cg-RX-API-DMAC10.html)
FR (1) FR2066471A5 (cg-RX-API-DMAC10.html)
GB (2) GB1342487A (cg-RX-API-DMAC10.html)
HK (2) HK28876A (cg-RX-API-DMAC10.html)
MY (2) MY7600038A (cg-RX-API-DMAC10.html)
NL (1) NL172388B (cg-RX-API-DMAC10.html)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3939047A (en) * 1971-11-15 1976-02-17 Nippon Electric Co., Ltd. Method for fabricating electrode structure for a semiconductor device having a shallow junction
US3827949A (en) * 1972-03-29 1974-08-06 Ibm Anodic oxide passivated planar aluminum metallurgy system and method of producing
JPS557019B2 (cg-RX-API-DMAC10.html) * 1972-05-10 1980-02-21
JPS4995591A (cg-RX-API-DMAC10.html) * 1973-01-12 1974-09-10
JPS4995592A (cg-RX-API-DMAC10.html) * 1973-01-12 1974-09-10
US3864217A (en) * 1974-01-21 1975-02-04 Nippon Electric Co Method of fabricating a semiconductor device
US3918148A (en) * 1974-04-15 1975-11-11 Ibm Integrated circuit chip carrier and method for forming the same
US3882000A (en) * 1974-05-09 1975-05-06 Bell Telephone Labor Inc Formation of composite oxides on III-V semiconductors
FR2285716A1 (fr) * 1974-09-18 1976-04-16 Radiotechnique Compelec Procede pour la fabrication d'un dispositif semi-conducteur comportant une configuration de conducteurs et dispositif fabrique par ce procede
US3971710A (en) * 1974-11-29 1976-07-27 Ibm Anodized articles and process of preparing same
US4056681A (en) * 1975-08-04 1977-11-01 International Telephone And Telegraph Corporation Self-aligning package for integrated circuits
US4045302A (en) * 1976-07-08 1977-08-30 Burroughs Corporation Multilevel metallization process
US4161430A (en) * 1978-12-04 1979-07-17 Burroughs Corporation Method of forming integrated circuit metal interconnect structure employing molybdenum on aluminum
US4158613A (en) * 1978-12-04 1979-06-19 Burroughs Corporation Method of forming a metal interconnect structure for integrated circuits
DE2902665A1 (de) * 1979-01-24 1980-08-07 Siemens Ag Verfahren zum herstellen von integrierten mos-schaltungen in silizium-gate- technologie
FR2510307A1 (fr) * 1981-07-24 1983-01-28 Hitachi Ltd Dispositif a semi-conducteurs et procede de fabrication d'un tel dispositif
US4517616A (en) * 1982-04-12 1985-05-14 Memorex Corporation Thin film magnetic recording transducer having embedded pole piece design
US4391849A (en) * 1982-04-12 1983-07-05 Memorex Corporation Metal oxide patterns with planar surface
JPS60132353A (ja) * 1983-12-20 1985-07-15 Mitsubishi Electric Corp 半導体装置の製造方法
US4936957A (en) * 1988-03-28 1990-06-26 The United States Of America As Represented By The Secretary Of The Air Force Thin film oxide dielectric structure and method
US5141603A (en) * 1988-03-28 1992-08-25 The United States Of America As Represented By The Secretary Of The Air Force Capacitor method for improved oxide dielectric
US5098860A (en) * 1990-05-07 1992-03-24 The Boeing Company Method of fabricating high-density interconnect structures having tantalum/tantalum oxide layers
LT4425B (lt) 1995-04-28 1998-12-28 Monika Paszkowska Termodinaminis aspiracinis vožtuvas
JP4882229B2 (ja) * 2004-09-08 2012-02-22 株式会社デンソー 半導体装置およびその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1048424A (en) * 1963-08-28 1966-11-16 Int Standard Electric Corp Improvements in or relating to semiconductor devices
US3337426A (en) 1964-06-04 1967-08-22 Gen Dynamics Corp Process for fabricating electrical circuits

Also Published As

Publication number Publication date
MY7600038A (en) 1976-12-31
MY7600037A (en) 1976-12-31
HK28876A (en) 1976-05-28
DE2052424A1 (de) 1971-09-30
DE2066108C2 (de) 1985-04-04
US3741880A (en) 1973-06-26
HK28976A (en) 1976-05-28
GB1342486A (en) 1974-01-03
GB1342487A (en) 1974-01-03
FR2066471A5 (cg-RX-API-DMAC10.html) 1971-08-06
DE2052424C3 (de) 1979-11-15
DE2052424B2 (de) 1979-03-22
NL172388B (nl) 1983-03-16

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Legal Events

Date Code Title Description
TNT Modifications of names of proprietors of patents or applicants of examined patent applications

Owner name: NEC CORPORATION

V4 Discontinued because of reaching the maximum lifetime of a patent