NL7014289A - - Google Patents

Info

Publication number
NL7014289A
NL7014289A NL7014289A NL7014289A NL7014289A NL 7014289 A NL7014289 A NL 7014289A NL 7014289 A NL7014289 A NL 7014289A NL 7014289 A NL7014289 A NL 7014289A NL 7014289 A NL7014289 A NL 7014289A
Authority
NL
Netherlands
Application number
NL7014289A
Other versions
NL166819C (nl
NL166819B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7014289A publication Critical patent/NL7014289A/xx
Publication of NL166819B publication Critical patent/NL166819B/xx
Application granted granted Critical
Publication of NL166819C publication Critical patent/NL166819C/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • H03K5/135—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals by the use of time reference signals, e.g. clock signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Logic Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Static Random-Access Memory (AREA)
  • Shift Register Type Memory (AREA)
NL7014289.A 1969-09-29 1970-09-29 Halfgeleiderinrichting, omvattende een halfgeleider- lichaam met ten minste twee op enige afstand van elkaar in het halfgeleiderlichaam gevormde veldeffekttransistors, welke zijn voorzien van een op een isolerende laag op een oppervlak van het halfgeleiderlichaam gevormde stuurelektrode. NL166819C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP44077645A JPS5126772B1 (OSRAM) 1969-09-29 1969-09-29

Publications (3)

Publication Number Publication Date
NL7014289A true NL7014289A (OSRAM) 1971-03-31
NL166819B NL166819B (nl) 1981-04-15
NL166819C NL166819C (nl) 1981-09-15

Family

ID=13639614

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7014289.A NL166819C (nl) 1969-09-29 1970-09-29 Halfgeleiderinrichting, omvattende een halfgeleider- lichaam met ten minste twee op enige afstand van elkaar in het halfgeleiderlichaam gevormde veldeffekttransistors, welke zijn voorzien van een op een isolerende laag op een oppervlak van het halfgeleiderlichaam gevormde stuurelektrode.

Country Status (5)

Country Link
JP (1) JPS5126772B1 (OSRAM)
DE (1) DE2047612A1 (OSRAM)
FR (1) FR2063062B1 (OSRAM)
GB (1) GB1309139A (OSRAM)
NL (1) NL166819C (OSRAM)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1459892A (fr) * 1964-08-20 1966-06-17 Texas Instruments Inc Dispositifs semi-conducteurs
GB1131675A (en) * 1966-07-11 1968-10-23 Hitachi Ltd Semiconductor device
GB1170705A (en) * 1967-02-27 1969-11-12 Hitachi Ltd An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same

Also Published As

Publication number Publication date
FR2063062B1 (OSRAM) 1974-08-23
JPS5126772B1 (OSRAM) 1976-08-09
GB1309139A (en) 1973-03-07
NL166819C (nl) 1981-09-15
DE2047612A1 (de) 1971-04-22
NL166819B (nl) 1981-04-15
FR2063062A1 (OSRAM) 1971-07-02

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Legal Events

Date Code Title Description
V4 Discontinued because of reaching the maximum lifetime of a patent