NL7012831A - - Google Patents

Info

Publication number
NL7012831A
NL7012831A NL7012831A NL7012831A NL7012831A NL 7012831 A NL7012831 A NL 7012831A NL 7012831 A NL7012831 A NL 7012831A NL 7012831 A NL7012831 A NL 7012831A NL 7012831 A NL7012831 A NL 7012831A
Authority
NL
Netherlands
Application number
NL7012831A
Other versions
NL167277B (nl
NL167277C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7012831A priority Critical patent/NL167277C/xx
Priority to DE2142146A priority patent/DE2142146C3/de
Priority to CA121176A priority patent/CA925224A/en
Priority to US3775200D priority patent/US3775200A/en
Priority to AU32687/71A priority patent/AU466690B2/en
Priority to JP6485471A priority patent/JPS5139512B1/ja
Priority to GB4009271A priority patent/GB1356323A/en
Priority to FR7131003A priority patent/FR2103607B1/fr
Priority to BE771917A priority patent/BE771917A/xx
Publication of NL7012831A publication Critical patent/NL7012831A/xx
Publication of NL167277B publication Critical patent/NL167277B/xx
Application granted granted Critical
Publication of NL167277C publication Critical patent/NL167277C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
NL7012831A 1970-08-29 1970-08-29 Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting. NL167277C (nl)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL7012831A NL167277C (nl) 1970-08-29 1970-08-29 Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting.
DE2142146A DE2142146C3 (de) 1970-08-29 1971-08-23 Verfahren zum gleichzeitigen Herstellen mehrerer Halbleiterbauelemente
CA121176A CA925224A (en) 1970-08-29 1971-08-24 Semiconductor device and method of manufacturing the same
AU32687/71A AU466690B2 (en) 1970-08-29 1971-08-25 Semiconductor device and method of manufacturing the same
US3775200D US3775200A (en) 1970-08-29 1971-08-25 Schottky contact devices and method of manufacture
JP6485471A JPS5139512B1 (ref) 1970-08-29 1971-08-26
GB4009271A GB1356323A (en) 1970-08-29 1971-08-26 Semiconductor devices
FR7131003A FR2103607B1 (ref) 1970-08-29 1971-08-26
BE771917A BE771917A (fr) 1970-08-29 1971-08-27 Dispositif semiconducteur et procede permettant sa fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7012831A NL167277C (nl) 1970-08-29 1970-08-29 Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting.

Publications (3)

Publication Number Publication Date
NL7012831A true NL7012831A (ref) 1972-03-02
NL167277B NL167277B (nl) 1981-06-16
NL167277C NL167277C (nl) 1981-11-16

Family

ID=19810894

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7012831A NL167277C (nl) 1970-08-29 1970-08-29 Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting.

Country Status (9)

Country Link
US (1) US3775200A (ref)
JP (1) JPS5139512B1 (ref)
AU (1) AU466690B2 (ref)
BE (1) BE771917A (ref)
CA (1) CA925224A (ref)
DE (1) DE2142146C3 (ref)
FR (1) FR2103607B1 (ref)
GB (1) GB1356323A (ref)
NL (1) NL167277C (ref)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189342A (en) * 1971-10-07 1980-02-19 U.S. Philips Corporation Semiconductor device comprising projecting contact layers
US3761783A (en) * 1972-02-02 1973-09-25 Sperry Rand Corp Duel-mesa ring-shaped high frequency diode
JPS519269B2 (ref) * 1972-05-19 1976-03-25
US3839110A (en) * 1973-02-20 1974-10-01 Bell Telephone Labor Inc Chemical etchant for palladium
US4071397A (en) * 1973-07-02 1978-01-31 Motorola, Inc. Silicon metallographic etch
DE2409312C3 (de) * 1974-02-27 1981-01-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer auf der Halbleiteroberfläche angeordneten Metallschicht und Verfahren zu ihrer Herstellung
DE2415487C3 (de) * 1974-03-29 1978-04-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Leiterplatten nach dem Photoätzverfahren
US4092660A (en) * 1974-09-16 1978-05-30 Texas Instruments Incorporated High power field effect transistor
US3956042A (en) * 1974-11-07 1976-05-11 Xerox Corporation Selective etchants for thin film devices
US3932880A (en) * 1974-11-26 1976-01-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with Schottky barrier
FR2328286A1 (fr) * 1975-10-14 1977-05-13 Thomson Csf Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede
US4023260A (en) * 1976-03-05 1977-05-17 Bell Telephone Laboratories, Incorporated Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
US4023258A (en) * 1976-03-05 1977-05-17 Bell Telephone Laboratories, Incorporated Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
US4142893A (en) * 1977-09-14 1979-03-06 Raytheon Company Spray etch dicing method
US4681657A (en) * 1985-10-31 1987-07-21 International Business Machines Corporation Preferential chemical etch for doped silicon
US4784967A (en) * 1986-12-19 1988-11-15 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating a field-effect transistor with a self-aligned gate
US6366266B1 (en) 1999-09-02 2002-04-02 Micron Technology, Inc. Method and apparatus for programmable field emission display
DE19962431B4 (de) * 1999-12-22 2005-10-20 Micronas Gmbh Verfahren zum Herstellen einer Halbleiteranordnung mit Haftzone für eine Passivierungsschicht
US7084475B2 (en) * 2004-02-17 2006-08-01 Velox Semiconductor Corporation Lateral conduction Schottky diode with plural mesas
US7417266B1 (en) 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
US7436039B2 (en) * 2005-01-06 2008-10-14 Velox Semiconductor Corporation Gallium nitride semiconductor device
US8026568B2 (en) 2005-11-15 2011-09-27 Velox Semiconductor Corporation Second Schottky contact metal layer to improve GaN Schottky diode performance
US7939853B2 (en) * 2007-03-20 2011-05-10 Power Integrations, Inc. Termination and contact structures for a high voltage GaN-based heterojunction transistor
KR20090127035A (ko) * 2007-03-26 2009-12-09 스미토모덴키고교가부시키가이샤 쇼트키 배리어 다이오드 및 그 제조 방법
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
US11749758B1 (en) 2019-11-05 2023-09-05 Semiq Incorporated Silicon carbide junction barrier schottky diode with wave-shaped regions
US11469333B1 (en) 2020-02-19 2022-10-11 Semiq Incorporated Counter-doped silicon carbide Schottky barrier diode

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3110849A (en) * 1960-10-03 1963-11-12 Gen Electric Tunnel diode device
US3214654A (en) * 1961-02-01 1965-10-26 Rca Corp Ohmic contacts to iii-v semiconductive compound bodies
US3513022A (en) * 1967-04-26 1970-05-19 Rca Corp Method of fabricating semiconductor devices
JPS4512750Y1 (ref) * 1969-05-01 1970-06-03

Also Published As

Publication number Publication date
NL167277B (nl) 1981-06-16
NL167277C (nl) 1981-11-16
US3775200A (en) 1973-11-27
DE2142146A1 (de) 1972-03-02
AU466690B2 (en) 1975-11-06
AU3268771A (en) 1973-03-01
GB1356323A (en) 1974-06-12
FR2103607A1 (ref) 1972-04-14
JPS5139512B1 (ref) 1976-10-28
FR2103607B1 (ref) 1976-05-28
DE2142146B2 (de) 1979-07-12
BE771917A (fr) 1972-02-28
DE2142146C3 (de) 1980-03-13
CA925224A (en) 1973-04-24

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Legal Events

Date Code Title Description
V2 Lapsed due to non-payment of the last due maintenance fee for the patent application