JPS5139512B1 - - Google Patents

Info

Publication number
JPS5139512B1
JPS5139512B1 JP6485471A JP6485471A JPS5139512B1 JP S5139512 B1 JPS5139512 B1 JP S5139512B1 JP 6485471 A JP6485471 A JP 6485471A JP 6485471 A JP6485471 A JP 6485471A JP S5139512 B1 JPS5139512 B1 JP S5139512B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6485471A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5139512B1 publication Critical patent/JPS5139512B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP6485471A 1970-08-29 1971-08-26 Pending JPS5139512B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7012831A NL167277C (nl) 1970-08-29 1970-08-29 Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting.

Publications (1)

Publication Number Publication Date
JPS5139512B1 true JPS5139512B1 (ja) 1976-10-28

Family

ID=19810894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6485471A Pending JPS5139512B1 (ja) 1970-08-29 1971-08-26

Country Status (9)

Country Link
US (1) US3775200A (ja)
JP (1) JPS5139512B1 (ja)
AU (1) AU466690B2 (ja)
BE (1) BE771917A (ja)
CA (1) CA925224A (ja)
DE (1) DE2142146C3 (ja)
FR (1) FR2103607B1 (ja)
GB (1) GB1356323A (ja)
NL (1) NL167277C (ja)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4189342A (en) * 1971-10-07 1980-02-19 U.S. Philips Corporation Semiconductor device comprising projecting contact layers
US3761783A (en) * 1972-02-02 1973-09-25 Sperry Rand Corp Duel-mesa ring-shaped high frequency diode
JPS519269B2 (ja) * 1972-05-19 1976-03-25
US3839110A (en) * 1973-02-20 1974-10-01 Bell Telephone Labor Inc Chemical etchant for palladium
US4071397A (en) * 1973-07-02 1978-01-31 Motorola, Inc. Silicon metallographic etch
DE2409312C3 (de) * 1974-02-27 1981-01-08 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit einer auf der Halbleiteroberfläche angeordneten Metallschicht und Verfahren zu ihrer Herstellung
DE2415487C3 (de) * 1974-03-29 1978-04-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung von Leiterplatten nach dem Photoätzverfahren
US4092660A (en) * 1974-09-16 1978-05-30 Texas Instruments Incorporated High power field effect transistor
US3956042A (en) * 1974-11-07 1976-05-11 Xerox Corporation Selective etchants for thin film devices
US3932880A (en) * 1974-11-26 1976-01-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with Schottky barrier
FR2328286A1 (fr) * 1975-10-14 1977-05-13 Thomson Csf Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede
US4023260A (en) * 1976-03-05 1977-05-17 Bell Telephone Laboratories, Incorporated Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
US4023258A (en) * 1976-03-05 1977-05-17 Bell Telephone Laboratories, Incorporated Method of manufacturing semiconductor diodes for use in millimeter-wave circuits
US4142893A (en) * 1977-09-14 1979-03-06 Raytheon Company Spray etch dicing method
US4681657A (en) * 1985-10-31 1987-07-21 International Business Machines Corporation Preferential chemical etch for doped silicon
US4784967A (en) * 1986-12-19 1988-11-15 American Telephone And Telegraph Company, At&T Bell Laboratories Method for fabricating a field-effect transistor with a self-aligned gate
US6366266B1 (en) 1999-09-02 2002-04-02 Micron Technology, Inc. Method and apparatus for programmable field emission display
DE19962431B4 (de) * 1999-12-22 2005-10-20 Micronas Gmbh Verfahren zum Herstellen einer Halbleiteranordnung mit Haftzone für eine Passivierungsschicht
US7084475B2 (en) * 2004-02-17 2006-08-01 Velox Semiconductor Corporation Lateral conduction Schottky diode with plural mesas
US7417266B1 (en) 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
US7436039B2 (en) * 2005-01-06 2008-10-14 Velox Semiconductor Corporation Gallium nitride semiconductor device
US8026568B2 (en) 2005-11-15 2011-09-27 Velox Semiconductor Corporation Second Schottky contact metal layer to improve GaN Schottky diode performance
US7939853B2 (en) * 2007-03-20 2011-05-10 Power Integrations, Inc. Termination and contact structures for a high voltage GaN-based heterojunction transistor
EP2043157A4 (en) * 2007-03-26 2011-11-16 Sumitomo Electric Industries SCHOTTKY BARRIER DIODE AND MANUFACTURING METHOD THEREFOR
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
US11749758B1 (en) 2019-11-05 2023-09-05 Semiq Incorporated Silicon carbide junction barrier schottky diode with wave-shaped regions
US11469333B1 (en) 2020-02-19 2022-10-11 Semiq Incorporated Counter-doped silicon carbide Schottky barrier diode

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4512750Y1 (ja) * 1969-05-01 1970-06-03

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3110849A (en) * 1960-10-03 1963-11-12 Gen Electric Tunnel diode device
US3214654A (en) * 1961-02-01 1965-10-26 Rca Corp Ohmic contacts to iii-v semiconductive compound bodies
US3513022A (en) * 1967-04-26 1970-05-19 Rca Corp Method of fabricating semiconductor devices

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4512750Y1 (ja) * 1969-05-01 1970-06-03

Also Published As

Publication number Publication date
DE2142146C3 (de) 1980-03-13
FR2103607A1 (ja) 1972-04-14
NL7012831A (ja) 1972-03-02
AU466690B2 (en) 1975-11-06
AU3268771A (en) 1973-03-01
DE2142146A1 (de) 1972-03-02
DE2142146B2 (de) 1979-07-12
US3775200A (en) 1973-11-27
NL167277B (nl) 1981-06-16
GB1356323A (en) 1974-06-12
CA925224A (en) 1973-04-24
FR2103607B1 (ja) 1976-05-28
NL167277C (nl) 1981-11-16
BE771917A (fr) 1972-02-28

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