NL7011551A - - Google Patents

Info

Publication number
NL7011551A
NL7011551A NL7011551A NL7011551A NL7011551A NL 7011551 A NL7011551 A NL 7011551A NL 7011551 A NL7011551 A NL 7011551A NL 7011551 A NL7011551 A NL 7011551A NL 7011551 A NL7011551 A NL 7011551A
Authority
NL
Netherlands
Application number
NL7011551A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7011551A publication Critical patent/NL7011551A/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
NL7011551A 1969-08-27 1970-08-05 NL7011551A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85335369A 1969-08-27 1969-08-27

Publications (1)

Publication Number Publication Date
NL7011551A true NL7011551A (de) 1971-03-02

Family

ID=25315805

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7011551A NL7011551A (de) 1969-08-27 1970-08-05

Country Status (6)

Country Link
US (1) US3585613A (de)
JP (2) JPS5214576B1 (de)
DE (1) DE2033260C3 (de)
FR (1) FR2070663B1 (de)
GB (1) GB1260603A (de)
NL (1) NL7011551A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3742465A (en) * 1969-03-19 1973-06-26 Honeywell Inc Electronic memory storage element
US3893088A (en) * 1971-07-19 1975-07-01 Texas Instruments Inc Random access memory shift register system
BE788583A (fr) * 1971-09-16 1973-01-02 Intel Corp Cellule a trois lignes pour memoire a circuit integre a acces aleatoir
US3765000A (en) * 1971-11-03 1973-10-09 Honeywell Inf Systems Memory storage cell with single selection line and single input/output line
US3727196A (en) * 1971-11-29 1973-04-10 Mostek Corp Dynamic random access memory
US3846768A (en) * 1972-12-29 1974-11-05 Ibm Fixed threshold variable threshold storage device for use in a semiconductor storage array
US3851313A (en) * 1973-02-21 1974-11-26 Texas Instruments Inc Memory cell for sequentially addressed memory array
JPS5154789A (de) * 1974-11-09 1976-05-14 Nippon Electric Co
JPS57131629U (de) * 1981-02-10 1982-08-17
US4554645A (en) * 1983-03-10 1985-11-19 International Business Machines Corporation Multi-port register implementation

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory

Also Published As

Publication number Publication date
FR2070663B1 (de) 1974-05-03
JPS546456B1 (de) 1979-03-28
JPS5214576B1 (de) 1977-04-22
DE2033260B2 (de) 1979-12-20
DE2033260C3 (de) 1980-09-18
DE2033260A1 (de) 1971-03-04
US3585613A (en) 1971-06-15
GB1260603A (en) 1972-01-19
FR2070663A1 (de) 1971-09-17

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Legal Events

Date Code Title Description
BV The patent application has lapsed