NL6917985A - - Google Patents

Info

Publication number
NL6917985A
NL6917985A NL6917985A NL6917985A NL6917985A NL 6917985 A NL6917985 A NL 6917985A NL 6917985 A NL6917985 A NL 6917985A NL 6917985 A NL6917985 A NL 6917985A NL 6917985 A NL6917985 A NL 6917985A
Authority
NL
Netherlands
Application number
NL6917985A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6917985A priority Critical patent/NL6917985A/xx
Priority to DE19702056160 priority patent/DE2056160A1/de
Priority to SE1603570A priority patent/SE355958B/xx
Priority to GB5623670A priority patent/GB1322347A/en
Priority to JP10371770A priority patent/JPS494582B1/ja
Priority to CH1751170A priority patent/CH563188A5/xx
Priority to FR7042664A priority patent/FR2072498A5/fr
Priority to BE759585D priority patent/BE759585A/xx
Publication of NL6917985A publication Critical patent/NL6917985A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6917985A 1969-11-29 1969-11-29 NL6917985A (enrdf_load_stackoverflow)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL6917985A NL6917985A (enrdf_load_stackoverflow) 1969-11-29 1969-11-29
DE19702056160 DE2056160A1 (de) 1969-11-29 1970-11-14 Verfahren zum Niederschlagen ele mentaren Halbleitermaterial
SE1603570A SE355958B (enrdf_load_stackoverflow) 1969-11-29 1970-11-26
GB5623670A GB1322347A (en) 1969-11-29 1970-11-26 Methods of depositing semiconductor material
JP10371770A JPS494582B1 (enrdf_load_stackoverflow) 1969-11-29 1970-11-26
CH1751170A CH563188A5 (enrdf_load_stackoverflow) 1969-11-29 1970-11-26
FR7042664A FR2072498A5 (enrdf_load_stackoverflow) 1969-11-29 1970-11-27
BE759585D BE759585A (fr) 1969-11-29 1970-11-27 Procede permettant de deposer du materiau semiconducteur elementaire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6917985A NL6917985A (enrdf_load_stackoverflow) 1969-11-29 1969-11-29

Publications (1)

Publication Number Publication Date
NL6917985A true NL6917985A (enrdf_load_stackoverflow) 1971-06-02

Family

ID=19808511

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6917985A NL6917985A (enrdf_load_stackoverflow) 1969-11-29 1969-11-29

Country Status (8)

Country Link
JP (1) JPS494582B1 (enrdf_load_stackoverflow)
BE (1) BE759585A (enrdf_load_stackoverflow)
CH (1) CH563188A5 (enrdf_load_stackoverflow)
DE (1) DE2056160A1 (enrdf_load_stackoverflow)
FR (1) FR2072498A5 (enrdf_load_stackoverflow)
GB (1) GB1322347A (enrdf_load_stackoverflow)
NL (1) NL6917985A (enrdf_load_stackoverflow)
SE (1) SE355958B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52135075U (enrdf_load_stackoverflow) * 1976-04-08 1977-10-14
CN117467984B (zh) * 2023-11-08 2024-07-05 江苏首芯半导体科技有限公司 薄膜沉积装置及沉积方法

Also Published As

Publication number Publication date
BE759585A (fr) 1971-05-27
DE2056160A1 (de) 1971-06-03
SE355958B (enrdf_load_stackoverflow) 1973-05-14
GB1322347A (en) 1973-07-04
FR2072498A5 (enrdf_load_stackoverflow) 1971-09-24
CH563188A5 (enrdf_load_stackoverflow) 1975-06-30
JPS494582B1 (enrdf_load_stackoverflow) 1974-02-01

Similar Documents

Publication Publication Date Title
AU465413B2 (enrdf_load_stackoverflow)
CS150646B2 (enrdf_load_stackoverflow)
AU450150B2 (enrdf_load_stackoverflow)
FR2072498A5 (enrdf_load_stackoverflow)
AU470301B1 (enrdf_load_stackoverflow)
AU5113869A (enrdf_load_stackoverflow)
CS152475B2 (enrdf_load_stackoverflow)
CS150907B2 (enrdf_load_stackoverflow)
AT308690B (enrdf_load_stackoverflow)
AU428129B2 (enrdf_load_stackoverflow)
AU428074B2 (enrdf_load_stackoverflow)
AU4923469A (enrdf_load_stackoverflow)
CS150352B1 (enrdf_load_stackoverflow)
CS150729B1 (enrdf_load_stackoverflow)
AR203167Q (enrdf_load_stackoverflow)
AU5079269A (enrdf_load_stackoverflow)
AU5228269A (enrdf_load_stackoverflow)
AU4540468A (enrdf_load_stackoverflow)
AU5397469A (enrdf_load_stackoverflow)
AU4949169A (enrdf_load_stackoverflow)
BE760629A (enrdf_load_stackoverflow)
AU5066368A (enrdf_load_stackoverflow)
CH1864970A4 (enrdf_load_stackoverflow)
AU4815038A (enrdf_load_stackoverflow)
AU481328A (enrdf_load_stackoverflow)