NL6916602A - - Google Patents
Info
- Publication number
- NL6916602A NL6916602A NL6916602A NL6916602A NL6916602A NL 6916602 A NL6916602 A NL 6916602A NL 6916602 A NL6916602 A NL 6916602A NL 6916602 A NL6916602 A NL 6916602A NL 6916602 A NL6916602 A NL 6916602A
- Authority
- NL
- Netherlands
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77303568A | 1968-11-04 | 1968-11-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6916602A true NL6916602A (enExample) | 1970-05-08 |
Family
ID=25096995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6916602A NL6916602A (enExample) | 1968-11-04 | 1969-11-04 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3573757A (enExample) |
| JP (1) | JPS5545989B1 (enExample) |
| BE (1) | BE741172A (enExample) |
| CH (1) | CH506160A (enExample) |
| DE (1) | DE1954939C3 (enExample) |
| FR (1) | FR2049040B1 (enExample) |
| GB (1) | GB1296712A (enExample) |
| NL (1) | NL6916602A (enExample) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1308711A (en) * | 1969-03-13 | 1973-03-07 | Energy Conversion Devices Inc | Combination switch units and integrated circuits |
| US3708717A (en) * | 1969-05-16 | 1973-01-02 | Energy Conversion Devices Inc | Electroluminescent array and method and apparatus for controlling discrete points on the array |
| US3680062A (en) * | 1970-06-24 | 1972-07-25 | Westinghouse Electric Corp | Resettable non-volatile memory utilizing variable threshold voltage devices |
| US3713111A (en) * | 1970-12-14 | 1973-01-23 | Rca Corp | Operation of memory array employing variable threshold transistors |
| US3740620A (en) * | 1971-06-22 | 1973-06-19 | Ibm | Storage system having heterojunction-homojunction devices |
| GB1412107A (en) * | 1971-12-18 | 1975-10-29 | Marconi Co Ltd | Semi-conductor memory device arrangements |
| US3946381A (en) * | 1972-06-05 | 1976-03-23 | National Science Foundation | Graphic system apparatus utilizing plasma display/memory devices with direct electrical read-out |
| US3813558A (en) * | 1972-06-26 | 1974-05-28 | Ibm | Directional, non-volatile bistable resistor logic circuits |
| US5694146A (en) * | 1994-10-14 | 1997-12-02 | Energy Conversion Devices, Inc. | Active matrix LCD array employing thin film chalcogenide threshold switches to isolate individual pixels |
| US6888750B2 (en) * | 2000-04-28 | 2005-05-03 | Matrix Semiconductor, Inc. | Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication |
| EP2323164B1 (en) * | 2000-08-14 | 2015-11-25 | SanDisk 3D LLC | Multilevel memory array and method for making same |
| US6580124B1 (en) | 2000-08-14 | 2003-06-17 | Matrix Semiconductor Inc. | Multigate semiconductor device with vertical channel current and method of fabrication |
| US6897514B2 (en) * | 2001-03-28 | 2005-05-24 | Matrix Semiconductor, Inc. | Two mask floating gate EEPROM and method of making |
| US6841813B2 (en) * | 2001-08-13 | 2005-01-11 | Matrix Semiconductor, Inc. | TFT mask ROM and method for making same |
| US6593624B2 (en) | 2001-09-25 | 2003-07-15 | Matrix Semiconductor, Inc. | Thin film transistors with vertically offset drain regions |
| US6853049B2 (en) | 2002-03-13 | 2005-02-08 | Matrix Semiconductor, Inc. | Silicide-silicon oxide-semiconductor antifuse device and method of making |
| US6737675B2 (en) | 2002-06-27 | 2004-05-18 | Matrix Semiconductor, Inc. | High density 3D rail stack arrays |
| US7323707B2 (en) * | 2004-06-30 | 2008-01-29 | Intel Corporation | Initializing phase change memories |
| US7687830B2 (en) * | 2004-09-17 | 2010-03-30 | Ovonyx, Inc. | Phase change memory with ovonic threshold switch |
| US7149132B2 (en) | 2004-09-24 | 2006-12-12 | Ovonyx, Inc. | Biasing circuit for use in a non-volatile memory device |
| US7338857B2 (en) * | 2004-10-14 | 2008-03-04 | Ovonyx, Inc. | Increasing adherence of dielectrics to phase change materials |
| US20060097341A1 (en) * | 2004-11-05 | 2006-05-11 | Fabio Pellizzer | Forming phase change memory cell with microtrenches |
| EP1675183A1 (en) * | 2004-12-21 | 2006-06-28 | STMicroelectronics S.r.l. | Phase change memory cell with diode junction selection and manufacturing method thereof |
| US7489584B2 (en) * | 2005-05-11 | 2009-02-10 | Texas Instruments Incorporated | High performance, low-leakage static random access memory (SRAM) |
| US20070045606A1 (en) * | 2005-08-30 | 2007-03-01 | Michele Magistretti | Shaping a phase change layer in a phase change memory cell |
| EP1883113B1 (en) * | 2006-07-27 | 2010-03-10 | STMicroelectronics S.r.l. | Phase change memory device |
| US20100066567A1 (en) * | 2008-09-18 | 2010-03-18 | Microsoft Corporation | Resistive switch matrix |
| US9627395B2 (en) | 2015-02-11 | 2017-04-18 | Sandisk Technologies Llc | Enhanced channel mobility three-dimensional memory structure and method of making thereof |
| US9478495B1 (en) | 2015-10-26 | 2016-10-25 | Sandisk Technologies Llc | Three dimensional memory device containing aluminum source contact via structure and method of making thereof |
| US10162781B2 (en) | 2016-06-01 | 2018-12-25 | Micron Technology, Inc. | Logic component switch |
| US11049559B1 (en) * | 2020-06-11 | 2021-06-29 | Sandisk Technologies Llc | Subthreshold voltage forming of selectors in a crosspoint memory array |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3011155A (en) * | 1957-11-07 | 1961-11-28 | Bell Telephone Labor Inc | Electrical memory circuit |
| US3271591A (en) * | 1963-09-20 | 1966-09-06 | Energy Conversion Devices Inc | Symmetrical current controlling device |
| DE1212155B (de) * | 1964-02-05 | 1966-03-10 | Danfoss As | Elektrischer Speicher |
| DE1287628B (enExample) * | 1964-08-07 | 1969-01-23 | ||
| US3467945A (en) * | 1966-03-08 | 1969-09-16 | Itt | Electrically controlled matrix |
-
1968
- 1968-11-04 US US773035A patent/US3573757A/en not_active Expired - Lifetime
-
1969
- 1969-10-31 DE DE1954939A patent/DE1954939C3/de not_active Expired
- 1969-11-03 BE BE741172D patent/BE741172A/xx unknown
- 1969-11-03 FR FR696937759A patent/FR2049040B1/fr not_active Expired
- 1969-11-04 JP JP8800169A patent/JPS5545989B1/ja active Pending
- 1969-11-04 NL NL6916602A patent/NL6916602A/xx unknown
- 1969-11-04 GB GB1296712D patent/GB1296712A/en not_active Expired
- 1969-11-04 CH CH1639369A patent/CH506160A/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5545989B1 (enExample) | 1980-11-20 |
| GB1296712A (enExample) | 1972-11-15 |
| DE1954939C3 (de) | 1975-08-07 |
| US3573757A (en) | 1971-04-06 |
| BE741172A (enExample) | 1970-04-16 |
| CH506160A (de) | 1971-04-15 |
| DE1954939A1 (de) | 1970-05-14 |
| FR2049040B1 (enExample) | 1973-03-16 |
| FR2049040A1 (enExample) | 1971-03-26 |
| DE1954939B2 (de) | 1975-01-02 |