NL6915569A - - Google Patents
Info
- Publication number
- NL6915569A NL6915569A NL6915569A NL6915569A NL6915569A NL 6915569 A NL6915569 A NL 6915569A NL 6915569 A NL6915569 A NL 6915569A NL 6915569 A NL6915569 A NL 6915569A NL 6915569 A NL6915569 A NL 6915569A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP43074653A JPS497632B1 (en, 2012) | 1968-10-15 | 1968-10-15 | |
| JP43088214A JPS4831033B1 (en, 2012) | 1968-12-03 | 1968-12-03 | |
| JP43092354A JPS5123863B1 (en, 2012) | 1968-12-18 | 1968-12-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6915569A true NL6915569A (en, 2012) | 1970-04-17 |
Family
ID=27301575
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6915569A NL6915569A (en, 2012) | 1968-10-15 | 1969-10-15 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3612960A (en, 2012) |
| DE (1) | DE1951986A1 (en, 2012) |
| NL (1) | NL6915569A (en, 2012) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL171309C (nl) * | 1970-03-02 | 1983-03-01 | Hitachi Ltd | Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium. |
| JPS5624380B2 (en, 2012) * | 1973-07-13 | 1981-06-05 | ||
| FR2396418A1 (fr) * | 1977-06-29 | 1979-01-26 | Tokyo Shibaura Electric Co | Dispositif a semi-conducteurs integre dont les caracteristiques ne sont pas alterees par l'encapsulage |
| US4768076A (en) * | 1984-09-14 | 1988-08-30 | Hitachi, Ltd. | Recrystallized CMOS with different crystal planes |
| US4777517A (en) * | 1984-11-29 | 1988-10-11 | Fujitsu Limited | Compound semiconductor integrated circuit device |
| WO1990007796A1 (en) * | 1989-01-03 | 1990-07-12 | Massachusetts Institute Of Technology | Insulator films on diamond |
| JP3017860B2 (ja) * | 1991-10-01 | 2000-03-13 | 株式会社東芝 | 半導体基体およびその製造方法とその半導体基体を用いた半導体装置 |
| JP3187109B2 (ja) * | 1992-01-31 | 2001-07-11 | キヤノン株式会社 | 半導体部材およびその製造方法 |
| US5459085A (en) * | 1994-05-13 | 1995-10-17 | Lsi Logic Corporation | Gate array layout to accommodate multi angle ion implantation |
| US5729045A (en) * | 1996-04-02 | 1998-03-17 | Advanced Micro Devices, Inc. | Field effect transistor with higher mobility |
| US7186622B2 (en) * | 2004-07-15 | 2007-03-06 | Infineon Technologies Ag | Formation of active area using semiconductor growth process without STI integration |
| US7298009B2 (en) | 2005-02-01 | 2007-11-20 | Infineon Technologies Ag | Semiconductor method and device with mixed orientation substrate |
| CN100508144C (zh) * | 2005-06-20 | 2009-07-01 | 日本电信电话株式会社 | 金刚石半导体元件及其制造方法 |
| US8530355B2 (en) * | 2005-12-23 | 2013-09-10 | Infineon Technologies Ag | Mixed orientation semiconductor device and method |
| US20070190795A1 (en) * | 2006-02-13 | 2007-08-16 | Haoren Zhuang | Method for fabricating a semiconductor device with a high-K dielectric |
| JP7078947B2 (ja) * | 2017-02-06 | 2022-06-01 | 信越化学工業株式会社 | ダイヤモンド製膜用下地基板及びそれを用いたダイヤモンド基板の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3152023A (en) * | 1961-10-25 | 1964-10-06 | Cutler Hammer Inc | Method of making semiconductor devices |
| NL297836A (en, 2012) * | 1962-09-14 | |||
| US3476991A (en) * | 1967-11-08 | 1969-11-04 | Texas Instruments Inc | Inversion layer field effect device with azimuthally dependent carrier mobility |
-
1969
- 1969-10-14 US US866192A patent/US3612960A/en not_active Expired - Lifetime
- 1969-10-15 DE DE19691951986 patent/DE1951986A1/de active Pending
- 1969-10-15 NL NL6915569A patent/NL6915569A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3612960A (en) | 1971-10-12 |
| DE1951986A1 (de) | 1970-04-16 |