NL6914975A - - Google Patents

Info

Publication number
NL6914975A
NL6914975A NL6914975A NL6914975A NL6914975A NL 6914975 A NL6914975 A NL 6914975A NL 6914975 A NL6914975 A NL 6914975A NL 6914975 A NL6914975 A NL 6914975A NL 6914975 A NL6914975 A NL 6914975A
Authority
NL
Netherlands
Application number
NL6914975A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6914975A publication Critical patent/NL6914975A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03LAUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00Automatic control of frequency or phase; Synchronisation
    • H03L7/02Automatic control of frequency or phase; Synchronisation using a frequency discriminator comprising a passive frequency-determining element
    • H03L7/04Automatic control of frequency or phase; Synchronisation using a frequency discriminator comprising a passive frequency-determining element wherein the frequency-determining element comprises distributed inductance and capacitance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00Generation of oscillations using transit-time effects
    • H03B9/12Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H03B9/14Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance
    • H03B9/141Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices and elements comprising distributed inductance and capacitance and comprising a voltage sensitive element, e.g. varactor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2200/00Indexing scheme relating to details of oscillators covered by H03B
    • H03B2200/006Functional aspects of oscillators
    • H03B2200/0068Frequency or FM detection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
NL6914975A 1968-10-04 1969-10-03 NL6914975A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP43072666A JPS501369B1 (fr) 1968-10-04 1968-10-04

Publications (1)

Publication Number Publication Date
NL6914975A true NL6914975A (fr) 1970-04-07

Family

ID=13495900

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6914975A NL6914975A (fr) 1968-10-04 1969-10-03

Country Status (6)

Country Link
US (1) US3705364A (fr)
JP (1) JPS501369B1 (fr)
DE (1) DE1949645A1 (fr)
FR (1) FR2019963B1 (fr)
GB (1) GB1278088A (fr)
NL (1) NL6914975A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5340068B2 (fr) * 1972-08-25 1978-10-25
US3875535A (en) * 1973-05-24 1975-04-01 Rca Corp Enhanced efficiency diode circuit
US3882419A (en) * 1974-03-01 1975-05-06 Rca Corp Varactor tuned impatt diode microwave oscillator
JPS53161974U (fr) * 1977-05-25 1978-12-19
US4328470A (en) * 1980-05-12 1982-05-04 The United States Of America As Represented By The Secretary Of The Navy Pulse modulated IMPATT diode modulator
GB2133240B (en) * 1982-12-01 1986-06-25 Philips Electronic Associated Tunable waveguide oscillator
FR2542525A1 (fr) * 1983-03-11 1984-09-14 Thomson Csf Generateur a frequence micro-onde modulable en frequence
US5294895A (en) * 1991-10-09 1994-03-15 U.S. Philips Corporation Microwave oscillators and transmitters with frequency stabilization
US6999487B2 (en) 2001-10-05 2006-02-14 Xerox Corporation Terahertz generation processes and imaging process thereof

Also Published As

Publication number Publication date
US3705364A (en) 1972-12-05
FR2019963B1 (fr) 1974-07-12
GB1278088A (en) 1972-06-14
JPS501369B1 (fr) 1975-01-17
FR2019963A1 (fr) 1970-07-10
DE1949645A1 (de) 1970-04-30

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