NL6914952A - - Google Patents
Info
- Publication number
- NL6914952A NL6914952A NL6914952A NL6914952A NL6914952A NL 6914952 A NL6914952 A NL 6914952A NL 6914952 A NL6914952 A NL 6914952A NL 6914952 A NL6914952 A NL 6914952A NL 6914952 A NL6914952 A NL 6914952A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H10P14/6322—
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- H10P14/6309—
-
- H10P32/1406—
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- H10P32/171—
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- H10P95/00—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/92—Controlling diffusion profile by oxidation
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP43071852A JPS4915377B1 (enExample) | 1968-10-04 | 1968-10-04 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6914952A true NL6914952A (enExample) | 1970-04-07 |
Family
ID=13472467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6914952A NL6914952A (enExample) | 1968-10-04 | 1969-10-03 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3745070A (enExample) |
| JP (1) | JPS4915377B1 (enExample) |
| DE (1) | DE1950069B2 (enExample) |
| FR (1) | FR2023314A1 (enExample) |
| GB (1) | GB1239684A (enExample) |
| NL (1) | NL6914952A (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3895965A (en) * | 1971-05-24 | 1975-07-22 | Bell Telephone Labor Inc | Method of forming buried layers by ion implantation |
| FR2209217B1 (enExample) * | 1972-11-10 | 1977-12-16 | Lignes Telegraph Telephon | |
| US3852119A (en) * | 1972-11-14 | 1974-12-03 | Texas Instruments Inc | Metal-insulator-semiconductor structures having reduced junction capacitance and method of fabrication |
| US3966501A (en) * | 1973-03-23 | 1976-06-29 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor devices |
| US3959025A (en) * | 1974-05-01 | 1976-05-25 | Rca Corporation | Method of making an insulated gate field effect transistor |
| DE2507613C3 (de) * | 1975-02-21 | 1979-07-05 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung eines invers betriebenen Transistors |
| US4038106A (en) * | 1975-04-30 | 1977-07-26 | Rca Corporation | Four-layer trapatt diode and method for making same |
| US4055443A (en) * | 1975-06-19 | 1977-10-25 | Jury Stepanovich Akimov | Method for producing semiconductor matrix of light-emitting elements utilizing ion implantation and diffusion heating |
| US4055444A (en) * | 1976-01-12 | 1977-10-25 | Texas Instruments Incorporated | Method of making N-channel MOS integrated circuits |
| US4092209A (en) * | 1976-12-30 | 1978-05-30 | Rca Corp. | Silicon implanted and bombarded with phosphorus ions |
| US4168990A (en) * | 1977-04-04 | 1979-09-25 | International Rectifier Corporation | Hot implantation at 1100°-1300° C. for forming non-gaussian impurity profile |
| US4218267A (en) * | 1979-04-23 | 1980-08-19 | Rockwell International Corporation | Microelectronic fabrication method minimizing threshold voltage variation |
| DE3118785A1 (de) * | 1981-05-12 | 1982-12-02 | Siemens AG, 1000 Berlin und 8000 München | Verfahren und vorrichtung zum dotieren von halbleitermaterial |
| JPS6065528A (ja) * | 1983-09-21 | 1985-04-15 | Hitachi Ltd | ｐｎ接合形成法 |
| US4818711A (en) * | 1987-08-28 | 1989-04-04 | Intel Corporation | High quality oxide on an ion implanted polysilicon surface |
| AU5779200A (en) | 1999-07-01 | 2001-01-22 | E-Ink Corporation | Electrophoretic medium provided with spacers |
| WO2001080287A2 (en) | 2000-04-18 | 2001-10-25 | E Ink Corporation | Process for fabricating thin film transistors |
| US7893435B2 (en) | 2000-04-18 | 2011-02-22 | E Ink Corporation | Flexible electronic circuits and displays including a backplane comprising a patterned metal foil having a plurality of apertures extending therethrough |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1150454B (de) * | 1960-11-14 | 1963-06-20 | Licentia Gmbh | Verfahren zum Herstellen von pn-UEbergaengen in Siliziumscheiben |
| US3158505A (en) * | 1962-07-23 | 1964-11-24 | Fairchild Camera Instr Co | Method of placing thick oxide coatings on silicon and article |
| NL302630A (enExample) * | 1963-01-18 | 1900-01-01 | ||
| USB421061I5 (enExample) * | 1964-12-24 | |||
| US3388009A (en) * | 1965-06-23 | 1968-06-11 | Ion Physics Corp | Method of forming a p-n junction by an ionic beam |
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1968
- 1968-10-04 JP JP43071852A patent/JPS4915377B1/ja active Pending
-
1969
- 1969-09-30 US US00862438A patent/US3745070A/en not_active Expired - Lifetime
- 1969-10-02 GB GB1239684D patent/GB1239684A/en not_active Expired
- 1969-10-03 DE DE1950069A patent/DE1950069B2/de not_active Ceased
- 1969-10-03 FR FR6933855A patent/FR2023314A1/fr active Pending
- 1969-10-03 NL NL6914952A patent/NL6914952A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1950069B2 (de) | 1981-10-08 |
| FR2023314A1 (enExample) | 1970-08-21 |
| DE1950069A1 (de) | 1970-04-23 |
| GB1239684A (enExample) | 1971-07-21 |
| JPS4915377B1 (enExample) | 1974-04-15 |
| US3745070A (en) | 1973-07-10 |