NL6910195A - - Google Patents

Info

Publication number
NL6910195A
NL6910195A NL6910195A NL6910195A NL6910195A NL 6910195 A NL6910195 A NL 6910195A NL 6910195 A NL6910195 A NL 6910195A NL 6910195 A NL6910195 A NL 6910195A NL 6910195 A NL6910195 A NL 6910195A
Authority
NL
Netherlands
Application number
NL6910195A
Other versions
NL161924C (nl
NL161924B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6910195.A priority Critical patent/NL161924C/xx
Priority to DE19702030918 priority patent/DE2030918C3/de
Priority to US49404A priority patent/US3649885A/en
Priority to CH990470A priority patent/CH514938A/de
Priority to SE09048/70A priority patent/SE365069B/xx
Priority to AT585870A priority patent/AT331859B/de
Priority to GB3191870A priority patent/GB1318047A/en
Priority to ES381331A priority patent/ES381331A1/es
Priority to BE752837D priority patent/BE752837A/xx
Priority to JP45057325A priority patent/JPS4813873B1/ja
Priority to FR7024779A priority patent/FR2050486B1/fr
Publication of NL6910195A publication Critical patent/NL6910195A/xx
Publication of NL161924B publication Critical patent/NL161924B/xx
Application granted granted Critical
Publication of NL161924C publication Critical patent/NL161924C/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
NL6910195.A 1969-07-03 1969-07-03 Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden. NL161924C (nl)

Priority Applications (11)

Application Number Priority Date Filing Date Title
NL6910195.A NL161924C (nl) 1969-07-03 1969-07-03 Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.
DE19702030918 DE2030918C3 (de) 1969-07-03 1970-06-23 Feldeffekttransistor mit isolierter Steuerelektrode
US49404A US3649885A (en) 1969-07-03 1970-06-24 Tetrode mosfet with gate safety diode within island zone
SE09048/70A SE365069B (xx) 1969-07-03 1970-06-30
AT585870A AT331859B (de) 1969-07-03 1970-06-30 Feldeffekttransistor mit isolierter torelektrode
CH990470A CH514938A (de) 1969-07-03 1970-06-30 Feldeffekttransistor mit mindestens zwei Torelektroden
GB3191870A GB1318047A (en) 1969-07-03 1970-07-01 Insulated gate field effect transistors
ES381331A ES381331A1 (es) 1969-07-03 1970-07-01 Un dispositivo de transistor de efecto de campo.
BE752837D BE752837A (fr) 1969-07-03 1970-07-01 Transistor a effet de champ comportant une electrode-porte isolee
JP45057325A JPS4813873B1 (xx) 1969-07-03 1970-07-02
FR7024779A FR2050486B1 (xx) 1969-07-03 1970-07-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6910195.A NL161924C (nl) 1969-07-03 1969-07-03 Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.

Publications (3)

Publication Number Publication Date
NL6910195A true NL6910195A (xx) 1971-01-05
NL161924B NL161924B (nl) 1979-10-15
NL161924C NL161924C (nl) 1980-03-17

Family

ID=19807372

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6910195.A NL161924C (nl) 1969-07-03 1969-07-03 Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.

Country Status (10)

Country Link
US (1) US3649885A (xx)
JP (1) JPS4813873B1 (xx)
AT (1) AT331859B (xx)
BE (1) BE752837A (xx)
CH (1) CH514938A (xx)
ES (1) ES381331A1 (xx)
FR (1) FR2050486B1 (xx)
GB (1) GB1318047A (xx)
NL (1) NL161924C (xx)
SE (1) SE365069B (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1357515A (en) * 1972-03-10 1974-06-26 Matsushita Electronics Corp Method for manufacturing an mos integrated circuit
JPS5160573U (xx) * 1974-11-07 1976-05-13
US4389660A (en) * 1980-07-31 1983-06-21 Rockwell International Corporation High power solid state switch
JPS58119670A (ja) * 1982-01-11 1983-07-16 Nissan Motor Co Ltd 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA801891A (en) * 1968-12-17 Matsushita Electronics Corporation Insulated-gate field-effect transistor free from permanent breakdown
US3764864A (en) * 1966-03-29 1973-10-09 Matsushita Electronics Corp Insulated-gate field-effect transistor with punch-through effect element
GB1132810A (en) * 1966-03-30 1968-11-06 Matsushita Electronics Corp Field-effect transistor having insulated gates
GB1131675A (en) * 1966-07-11 1968-10-23 Hitachi Ltd Semiconductor device
US3469155A (en) * 1966-09-23 1969-09-23 Westinghouse Electric Corp Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US3555374A (en) * 1967-03-03 1971-01-12 Hitachi Ltd Field effect semiconductor device having a protective diode
US3470390A (en) * 1968-02-02 1969-09-30 Westinghouse Electric Corp Integrated back-to-back diodes to prevent breakdown of mis gate dielectric
US3512058A (en) * 1968-04-10 1970-05-12 Rca Corp High voltage transient protection for an insulated gate field effect transistor

Also Published As

Publication number Publication date
FR2050486B1 (xx) 1975-01-10
US3649885A (en) 1972-03-14
AT331859B (de) 1976-08-25
ES381331A1 (es) 1972-12-01
DE2030918B2 (de) 1977-03-24
GB1318047A (en) 1973-05-23
SE365069B (xx) 1974-03-11
ATA585870A (de) 1975-12-15
JPS4813873B1 (xx) 1973-05-01
NL161924C (nl) 1980-03-17
BE752837A (fr) 1971-01-04
FR2050486A1 (xx) 1971-04-02
DE2030918A1 (de) 1971-01-21
CH514938A (de) 1971-10-31
NL161924B (nl) 1979-10-15

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: PHILIPS