CA801891A - Insulated-gate field-effect transistor free from permanent breakdown - Google Patents

Insulated-gate field-effect transistor free from permanent breakdown

Info

Publication number
CA801891A
CA801891A CA801891A CA801891DA CA801891A CA 801891 A CA801891 A CA 801891A CA 801891 A CA801891 A CA 801891A CA 801891D A CA801891D A CA 801891DA CA 801891 A CA801891 A CA 801891A
Authority
CA
Canada
Prior art keywords
insulated
effect transistor
gate field
permanent breakdown
transistor free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA801891A
Inventor
Okumura Tomisaburo
Tsuchitani Akira
Hasegawa Toshio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Publication date
Application granted granted Critical
Publication of CA801891A publication Critical patent/CA801891A/en
Expired legal-status Critical Current

Links

CA801891A Insulated-gate field-effect transistor free from permanent breakdown Expired CA801891A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA801891T

Publications (1)

Publication Number Publication Date
CA801891A true CA801891A (en) 1968-12-17

Family

ID=36269917

Family Applications (1)

Application Number Title Priority Date Filing Date
CA801891A Expired CA801891A (en) Insulated-gate field-effect transistor free from permanent breakdown

Country Status (1)

Country Link
CA (1) CA801891A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649885A (en) * 1969-07-03 1972-03-14 Philips Corp Tetrode mosfet with gate safety diode within island zone

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649885A (en) * 1969-07-03 1972-03-14 Philips Corp Tetrode mosfet with gate safety diode within island zone

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