NL6908661A - - Google Patents

Info

Publication number
NL6908661A
NL6908661A NL6908661A NL6908661A NL6908661A NL 6908661 A NL6908661 A NL 6908661A NL 6908661 A NL6908661 A NL 6908661A NL 6908661 A NL6908661 A NL 6908661A NL 6908661 A NL6908661 A NL 6908661A
Authority
NL
Netherlands
Application number
NL6908661A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6908661A publication Critical patent/NL6908661A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Electrodes Of Semiconductors (AREA)
NL6908661A 1968-06-08 1969-06-06 NL6908661A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1764455A DE1764455C3 (de) 1968-06-08 1968-06-08 Monolithisch integrierte Darlington-Transistorschaltung

Publications (1)

Publication Number Publication Date
NL6908661A true NL6908661A (xx) 1969-12-10

Family

ID=5697996

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6908661A NL6908661A (xx) 1968-06-08 1969-06-06

Country Status (8)

Country Link
US (1) US3596150A (xx)
JP (1) JPS4821785B1 (xx)
BR (1) BR6909532D0 (xx)
DE (1) DE1764455C3 (xx)
ES (1) ES368121A1 (xx)
FR (1) FR1598626A (xx)
GB (1) GB1278826A (xx)
NL (1) NL6908661A (xx)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3753123A (en) * 1970-10-16 1973-08-14 Trw Inc Signal sorting system
BE791487A (fr) * 1971-11-18 1973-03-16 Rca Corp Dispositif semiconducteur
US3836995A (en) * 1973-05-25 1974-09-17 Rca Corp Semiconductor darlington circuit
US3813588A (en) * 1973-07-09 1974-05-28 Motorola Inc Efficient power darlington device configuration
FR2302594A1 (fr) * 1975-02-28 1976-09-24 Radiotechnique Compelec Dispositif semi-conducteur integre
JPS52149666U (xx) * 1976-05-11 1977-11-12
JPS5950109B2 (ja) * 1976-07-12 1984-12-06 日本電気株式会社 半導体装置
US4167748A (en) * 1978-07-03 1979-09-11 Bell Telephone Laboratories, Incorporated High voltage monolithic transistor circuit
JPS5559768A (en) * 1978-10-30 1980-05-06 Hitachi Ltd Darlington power transistor
US4646125A (en) * 1983-07-27 1987-02-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device including Darlington connections
EP0266205B1 (en) * 1986-10-31 1993-12-15 Nippondenso Co., Ltd. Semiconductor device constituting bipolar transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3210617A (en) 1961-01-11 1965-10-05 Westinghouse Electric Corp High gain transistor comprising direct connection between base and emitter electrodes

Also Published As

Publication number Publication date
JPS4821785B1 (xx) 1973-06-30
BR6909532D0 (pt) 1973-01-02
DE1764455B2 (de) 1975-09-18
DE1764455C3 (de) 1980-02-07
ES368121A1 (es) 1971-05-01
FR1598626A (xx) 1970-07-06
GB1278826A (en) 1972-06-21
DE1764455A1 (de) 1971-07-22
US3596150A (en) 1971-07-27

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