NL6900129A - - Google Patents

Info

Publication number
NL6900129A
NL6900129A NL6900129A NL6900129A NL6900129A NL 6900129 A NL6900129 A NL 6900129A NL 6900129 A NL6900129 A NL 6900129A NL 6900129 A NL6900129 A NL 6900129A NL 6900129 A NL6900129 A NL 6900129A
Authority
NL
Netherlands
Application number
NL6900129A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6900129A publication Critical patent/NL6900129A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6900129A 1968-01-05 1969-01-03 NL6900129A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69605768A 1968-01-05 1968-01-05

Publications (1)

Publication Number Publication Date
NL6900129A true NL6900129A (ko) 1969-07-08

Family

ID=24795535

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6900129A NL6900129A (ko) 1968-01-05 1969-01-03

Country Status (3)

Country Link
BE (1) BE726473A (ko)
GB (1) GB1186127A (ko)
NL (1) NL6900129A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190300A (ja) * 1983-04-08 1984-10-29 Hitachi Ltd 半導体製造方法および装置
WO2001006041A1 (en) * 1999-07-19 2001-01-25 Topsil Semiconductor Materials A/S Method and apparatus for production of a doped feed rod by ion implantation

Also Published As

Publication number Publication date
GB1186127A (en) 1970-04-02
BE726473A (ko) 1969-07-03

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