NL6816225A - - Google Patents
Info
- Publication number
- NL6816225A NL6816225A NL6816225A NL6816225A NL6816225A NL 6816225 A NL6816225 A NL 6816225A NL 6816225 A NL6816225 A NL 6816225A NL 6816225 A NL6816225 A NL 6816225A NL 6816225 A NL6816225 A NL 6816225A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H10P95/00—
-
- H10W20/40—
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US71546268A | 1968-03-04 | 1968-03-04 | |
| US1476770A | 1970-02-26 | 1970-02-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6816225A true NL6816225A (enExample) | 1969-09-08 |
Family
ID=26686491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6816225A NL6816225A (enExample) | 1968-03-04 | 1968-11-14 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3573570A (enExample) |
| DE (1) | DE1811995A1 (enExample) |
| FR (1) | FR1596754A (enExample) |
| GB (1) | GB1243247A (enExample) |
| NL (1) | NL6816225A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3842490A (en) * | 1971-04-21 | 1974-10-22 | Signetics Corp | Semiconductor structure with sloped side walls and method |
| US4265935A (en) * | 1977-04-28 | 1981-05-05 | Micro Power Systems Inc. | High temperature refractory metal contact assembly and multiple layer interconnect structure |
| US4507851A (en) * | 1982-04-30 | 1985-04-02 | Texas Instruments Incorporated | Process for forming an electrical interconnection system on a semiconductor |
| JPS61161740A (ja) * | 1985-01-07 | 1986-07-22 | モトロ−ラ・インコ−ポレ−テツド | 多層金属化集積回路およびその製造方法 |
| US4974056A (en) * | 1987-05-22 | 1990-11-27 | International Business Machines Corporation | Stacked metal silicide gate structure with barrier |
| JP2840271B2 (ja) * | 1989-01-27 | 1998-12-24 | キヤノン株式会社 | 記録ヘッド |
| EP0482556A1 (en) * | 1990-10-22 | 1992-04-29 | Nec Corporation | Polysilicon resistance element and semiconductor device using the same |
| EP0499433B1 (en) * | 1991-02-12 | 1998-04-15 | Matsushita Electronics Corporation | Semiconductor device with improved reliability wiring and method of its fabrication |
| JPH08178833A (ja) * | 1994-12-20 | 1996-07-12 | Yokogawa Eng Service Kk | 腐食検査板と腐食環境測定方法 |
| US6965165B2 (en) * | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
| US6936531B2 (en) * | 1998-12-21 | 2005-08-30 | Megic Corporation | Process of fabricating a chip structure |
| US6165911A (en) * | 1999-12-29 | 2000-12-26 | Calveley; Peter Braden | Method of patterning a metal layer |
| US7932603B2 (en) * | 2001-12-13 | 2011-04-26 | Megica Corporation | Chip structure and process for forming the same |
| US7482675B2 (en) * | 2005-06-24 | 2009-01-27 | International Business Machines Corporation | Probing pads in kerf area for wafer testing |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1050659A (enExample) * | 1963-04-24 | |||
| US3290127A (en) * | 1964-03-30 | 1966-12-06 | Bell Telephone Labor Inc | Barrier diode with metal contact and method of making |
| US3290570A (en) * | 1964-04-28 | 1966-12-06 | Texas Instruments Inc | Multilevel expanded metallic contacts for semiconductor devices |
| US3341753A (en) * | 1964-10-21 | 1967-09-12 | Texas Instruments Inc | Metallic contacts for semiconductor devices |
| US3419765A (en) * | 1965-10-01 | 1968-12-31 | Texas Instruments Inc | Ohmic contact to semiconductor devices |
| US3341743A (en) * | 1965-10-21 | 1967-09-12 | Texas Instruments Inc | Integrated circuitry having discrete regions of semiconductor material isolated by an insulating material |
| US3435445A (en) * | 1966-02-24 | 1969-03-25 | Texas Instruments Inc | Integrated electro-optic passive reflective display device |
| US3434020A (en) * | 1966-12-30 | 1969-03-18 | Texas Instruments Inc | Ohmic contacts consisting of a first level of molybdenum-gold mixture of gold and vanadium and a second level of molybdenum-gold |
| US3449825A (en) * | 1967-04-21 | 1969-06-17 | Northern Electric Co | Fabrication of semiconductor devices |
| US3442012A (en) * | 1967-08-03 | 1969-05-06 | Teledyne Inc | Method of forming a flip-chip integrated circuit |
-
1968
- 1968-11-08 GB GB52979/68A patent/GB1243247A/en not_active Expired
- 1968-11-14 NL NL6816225A patent/NL6816225A/xx unknown
- 1968-11-30 DE DE19681811995 patent/DE1811995A1/de active Pending
- 1968-12-03 FR FR1596754D patent/FR1596754A/fr not_active Expired
-
1970
- 1970-02-26 US US14767A patent/US3573570A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| GB1243247A (en) | 1971-08-18 |
| US3573570A (en) | 1971-04-06 |
| DE1811995A1 (de) | 1969-10-16 |
| FR1596754A (enExample) | 1970-06-22 |