NL6807377A - - Google Patents

Info

Publication number
NL6807377A
NL6807377A NL6807377A NL6807377A NL6807377A NL 6807377 A NL6807377 A NL 6807377A NL 6807377 A NL6807377 A NL 6807377A NL 6807377 A NL6807377 A NL 6807377A NL 6807377 A NL6807377 A NL 6807377A
Authority
NL
Netherlands
Application number
NL6807377A
Other versions
NL153020B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6807377A publication Critical patent/NL6807377A/xx
Publication of NL153020B publication Critical patent/NL153020B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/172—Vidicons

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
NL686807377A 1967-05-25 1968-05-24 Beeldopneeminrichting en trefelektrode voor deze inrichting, alsmede beeldopneembuis voorzien van deze trefelektrode. NL153020B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US641257A US3419746A (en) 1967-05-25 1967-05-25 Light sensitive storage device including diode array

Publications (2)

Publication Number Publication Date
NL6807377A true NL6807377A (en:Method) 1968-11-26
NL153020B NL153020B (nl) 1977-04-15

Family

ID=24571619

Family Applications (1)

Application Number Title Priority Date Filing Date
NL686807377A NL153020B (nl) 1967-05-25 1968-05-24 Beeldopneeminrichting en trefelektrode voor deze inrichting, alsmede beeldopneembuis voorzien van deze trefelektrode.

Country Status (8)

Country Link
US (1) US3419746A (en:Method)
JP (1) JPS4516537B1 (en:Method)
BE (1) BE715617A (en:Method)
DE (1) DE1762282B2 (en:Method)
FR (1) FR1581540A (en:Method)
GB (1) GB1222445A (en:Method)
NL (1) NL153020B (en:Method)
SE (1) SE336410B (en:Method)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3523208A (en) * 1968-05-27 1970-08-04 Bell Telephone Labor Inc Image converter
US3548233A (en) * 1968-11-29 1970-12-15 Rca Corp Charge storage device with pn junction diode array target having semiconductor contact pads
GB1286231A (en) * 1969-01-07 1972-08-23 Tokyo Shibaura Electric Co An electron multiplication target and an image pickup tube using the same
NL6904045A (en:Method) * 1969-03-15 1970-09-17
JPS4915646B1 (en:Method) * 1969-04-02 1974-04-16
US3664895A (en) * 1969-06-13 1972-05-23 Gen Electric Method of forming a camera tube diode array target by masking and diffusion
US3668473A (en) * 1969-06-24 1972-06-06 Tokyo Shibaura Electric Co Photosensitive semi-conductor device
US3631292A (en) * 1969-09-23 1971-12-28 Bell Telephone Labor Inc Image storage tube
US3670198A (en) * 1969-09-30 1972-06-13 Sprague Electric Co Solid-state vidicon structure
US3646390A (en) * 1969-11-04 1972-02-29 Rca Corp Image storage system
US4302703A (en) * 1969-11-10 1981-11-24 Bell Telephone Laboratories, Incorporated Video storage system
US3612954A (en) * 1969-11-12 1971-10-12 Rca Corp Semiconductor diode array vidicon target having selectively insulated defective diodes
US3923358A (en) * 1970-01-16 1975-12-02 Tokyo Shibaura Electric Co Method for manufacturing an image pickup tube
US3701914A (en) * 1970-03-03 1972-10-31 Bell Telephone Labor Inc Storage tube with array on pnpn diodes
US3786294A (en) * 1971-02-22 1974-01-15 Gen Electric Protective coating for diode array targets
DE2109814C3 (de) * 1971-03-02 1974-06-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
US3748523A (en) * 1971-08-04 1973-07-24 Westinghouse Electric Corp Broad spectral response pickup tube
US3765962A (en) * 1971-11-23 1973-10-16 Philips Corp Method of making a charge storage device
US3755015A (en) * 1971-12-10 1973-08-28 Gen Electric Anti-reflection coating for semiconductor diode array targets
US3778657A (en) * 1972-02-09 1973-12-11 Matsushita Electric Ind Co Ltd Target having a mosaic made up of a plurality of p-n junction elements
US3940652A (en) * 1972-02-23 1976-02-24 Raytheon Company Junction target monoscope
US3851205A (en) * 1972-02-23 1974-11-26 Raytheon Co Junction target monoscope
US3748549A (en) * 1972-03-29 1973-07-24 Philips Corp Resistive sea for camera tube employing silicon target with array of diodes
US3792197A (en) * 1972-07-31 1974-02-12 Bell Telephone Labor Inc Solid-state diode array camera tube having electronic control of light sensitivity
US3987327A (en) * 1973-12-10 1976-10-19 Rca Corporation Low dark current photoconductive device
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
US4139796A (en) * 1974-10-09 1979-02-13 Rca Corporation Photoconductor for imaging devices
JPS6022497B2 (ja) * 1974-10-26 1985-06-03 ソニー株式会社 半導体装置
US4291068A (en) * 1978-10-31 1981-09-22 The United States Of America As Represented By The Secretary Of The Army Method of making semiconductor photodetector with reduced time-constant
US4231820A (en) * 1979-02-21 1980-11-04 Rca Corporation Method of making a silicon diode array target

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB840763A (en) * 1955-08-17 1960-07-13 Emi Ltd Improvements in light sensitive targets
US2945973A (en) * 1957-07-18 1960-07-19 Westinghouse Electric Corp Image device
US3193418A (en) * 1960-10-27 1965-07-06 Fairchild Camera Instr Co Semiconductor device fabrication
NL281568A (en:Method) * 1961-08-16
US3213315A (en) * 1962-12-03 1965-10-19 Westinghouse Electric Corp High gain storage tube with bic target

Also Published As

Publication number Publication date
SE336410B (en:Method) 1971-07-05
JPS4516537B1 (en:Method) 1970-06-08
GB1222445A (en) 1971-02-10
FR1581540A (en:Method) 1969-09-19
DE1762282A1 (de) 1970-04-23
US3419746A (en) 1968-12-31
BE715617A (en:Method) 1968-10-16
NL153020B (nl) 1977-04-15
DE1762282B2 (de) 1971-04-01

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: WESTERN ELECTRI