NL153020B - Beeldopneeminrichting en trefelektrode voor deze inrichting, alsmede beeldopneembuis voorzien van deze trefelektrode. - Google Patents

Beeldopneeminrichting en trefelektrode voor deze inrichting, alsmede beeldopneembuis voorzien van deze trefelektrode.

Info

Publication number
NL153020B
NL153020B NL686807377A NL6807377A NL153020B NL 153020 B NL153020 B NL 153020B NL 686807377 A NL686807377 A NL 686807377A NL 6807377 A NL6807377 A NL 6807377A NL 153020 B NL153020 B NL 153020B
Authority
NL
Netherlands
Prior art keywords
trefelectrode
image taking
well
tube fitted
taking tube
Prior art date
Application number
NL686807377A
Other languages
English (en)
Other versions
NL6807377A (nl
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of NL6807377A publication Critical patent/NL6807377A/xx
Publication of NL153020B publication Critical patent/NL153020B/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/172—Vidicons
NL686807377A 1967-05-25 1968-05-24 Beeldopneeminrichting en trefelektrode voor deze inrichting, alsmede beeldopneembuis voorzien van deze trefelektrode. NL153020B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US641257A US3419746A (en) 1967-05-25 1967-05-25 Light sensitive storage device including diode array

Publications (2)

Publication Number Publication Date
NL6807377A NL6807377A (nl) 1968-11-26
NL153020B true NL153020B (nl) 1977-04-15

Family

ID=24571619

Family Applications (1)

Application Number Title Priority Date Filing Date
NL686807377A NL153020B (nl) 1967-05-25 1968-05-24 Beeldopneeminrichting en trefelektrode voor deze inrichting, alsmede beeldopneembuis voorzien van deze trefelektrode.

Country Status (8)

Country Link
US (1) US3419746A (nl)
JP (1) JPS4516537B1 (nl)
BE (1) BE715617A (nl)
DE (1) DE1762282B2 (nl)
FR (1) FR1581540A (nl)
GB (1) GB1222445A (nl)
NL (1) NL153020B (nl)
SE (1) SE336410B (nl)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3523208A (en) * 1968-05-27 1970-08-04 Bell Telephone Labor Inc Image converter
US3548233A (en) * 1968-11-29 1970-12-15 Rca Corp Charge storage device with pn junction diode array target having semiconductor contact pads
GB1286231A (en) * 1969-01-07 1972-08-23 Tokyo Shibaura Electric Co An electron multiplication target and an image pickup tube using the same
NL6904045A (nl) * 1969-03-15 1970-09-17
JPS4915646B1 (nl) * 1969-04-02 1974-04-16
US3664895A (en) * 1969-06-13 1972-05-23 Gen Electric Method of forming a camera tube diode array target by masking and diffusion
US3668473A (en) * 1969-06-24 1972-06-06 Tokyo Shibaura Electric Co Photosensitive semi-conductor device
US3631292A (en) * 1969-09-23 1971-12-28 Bell Telephone Labor Inc Image storage tube
US3670198A (en) * 1969-09-30 1972-06-13 Sprague Electric Co Solid-state vidicon structure
US3646390A (en) * 1969-11-04 1972-02-29 Rca Corp Image storage system
US4302703A (en) * 1969-11-10 1981-11-24 Bell Telephone Laboratories, Incorporated Video storage system
US3612954A (en) * 1969-11-12 1971-10-12 Rca Corp Semiconductor diode array vidicon target having selectively insulated defective diodes
US3923358A (en) * 1970-01-16 1975-12-02 Tokyo Shibaura Electric Co Method for manufacturing an image pickup tube
US3701914A (en) * 1970-03-03 1972-10-31 Bell Telephone Labor Inc Storage tube with array on pnpn diodes
US3786294A (en) * 1971-02-22 1974-01-15 Gen Electric Protective coating for diode array targets
DE2109814C3 (de) * 1971-03-02 1974-06-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
US3748523A (en) * 1971-08-04 1973-07-24 Westinghouse Electric Corp Broad spectral response pickup tube
US3765962A (en) * 1971-11-23 1973-10-16 Philips Corp Method of making a charge storage device
US3755015A (en) * 1971-12-10 1973-08-28 Gen Electric Anti-reflection coating for semiconductor diode array targets
US3778657A (en) * 1972-02-09 1973-12-11 Matsushita Electric Ind Co Ltd Target having a mosaic made up of a plurality of p-n junction elements
US3851205A (en) * 1972-02-23 1974-11-26 Raytheon Co Junction target monoscope
US3940652A (en) * 1972-02-23 1976-02-24 Raytheon Company Junction target monoscope
US3748549A (en) * 1972-03-29 1973-07-24 Philips Corp Resistive sea for camera tube employing silicon target with array of diodes
US3792197A (en) * 1972-07-31 1974-02-12 Bell Telephone Labor Inc Solid-state diode array camera tube having electronic control of light sensitivity
US3987327A (en) * 1973-12-10 1976-10-19 Rca Corporation Low dark current photoconductive device
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
US4139796A (en) * 1974-10-09 1979-02-13 Rca Corporation Photoconductor for imaging devices
JPS6022497B2 (ja) * 1974-10-26 1985-06-03 ソニー株式会社 半導体装置
US4291068A (en) * 1978-10-31 1981-09-22 The United States Of America As Represented By The Secretary Of The Army Method of making semiconductor photodetector with reduced time-constant
US4231820A (en) * 1979-02-21 1980-11-04 Rca Corporation Method of making a silicon diode array target

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB840763A (en) * 1955-08-17 1960-07-13 Emi Ltd Improvements in light sensitive targets
US2945973A (en) * 1957-07-18 1960-07-19 Westinghouse Electric Corp Image device
US3193418A (en) * 1960-10-27 1965-07-06 Fairchild Camera Instr Co Semiconductor device fabrication
NL281568A (nl) * 1961-08-16
US3213315A (en) * 1962-12-03 1965-10-19 Westinghouse Electric Corp High gain storage tube with bic target

Also Published As

Publication number Publication date
US3419746A (en) 1968-12-31
SE336410B (nl) 1971-07-05
NL6807377A (nl) 1968-11-26
BE715617A (nl) 1968-10-16
GB1222445A (en) 1971-02-10
DE1762282B2 (de) 1971-04-01
JPS4516537B1 (nl) 1970-06-08
DE1762282A1 (de) 1970-04-23
FR1581540A (nl) 1969-09-19

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: WESTERN ELECTRI