NL6801748A - - Google Patents

Info

Publication number
NL6801748A
NL6801748A NL6801748A NL6801748A NL6801748A NL 6801748 A NL6801748 A NL 6801748A NL 6801748 A NL6801748 A NL 6801748A NL 6801748 A NL6801748 A NL 6801748A NL 6801748 A NL6801748 A NL 6801748A
Authority
NL
Netherlands
Application number
NL6801748A
Other versions
NL141030B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6801748A publication Critical patent/NL6801748A/xx
Publication of NL141030B publication Critical patent/NL141030B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NL686801748A 1967-02-08 1968-02-08 Werkwijze voor het aanbrengen van een elektrode bij een halfgeleiderinrichting, en halfgeleiderinrichting vervaardigd volgens deze werkwijze. NL141030B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US61471567A 1967-02-08 1967-02-08

Publications (2)

Publication Number Publication Date
NL6801748A true NL6801748A (fr) 1968-08-09
NL141030B NL141030B (nl) 1974-01-15

Family

ID=24462425

Family Applications (1)

Application Number Title Priority Date Filing Date
NL686801748A NL141030B (nl) 1967-02-08 1968-02-08 Werkwijze voor het aanbrengen van een elektrode bij een halfgeleiderinrichting, en halfgeleiderinrichting vervaardigd volgens deze werkwijze.

Country Status (8)

Country Link
US (1) US3503124A (fr)
JP (1) JPS4811671B1 (fr)
CH (1) CH477094A (fr)
DE (1) DE1639241A1 (fr)
FR (1) FR1551444A (fr)
GB (1) GB1207370A (fr)
NL (1) NL141030B (fr)
SE (1) SE350367B (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575052B1 (fr) * 1971-06-16 1982-01-28
JPS567305B2 (fr) * 1973-01-19 1981-02-17
US3976524A (en) * 1974-06-17 1976-08-24 Ibm Corporation Planarization of integrated circuit surfaces through selective photoresist masking
US4003126A (en) * 1974-09-12 1977-01-18 Canadian Patents And Development Limited Method of making metal oxide semiconductor devices
US4137109A (en) * 1976-04-12 1979-01-30 Texas Instruments Incorporated Selective diffusion and etching method for isolation of integrated logic circuit
US4821094A (en) * 1985-11-08 1989-04-11 Lockheed Missiles & Space Company, Inc. Gate alignment procedure in fabricating semiconductor devices
US5140387A (en) * 1985-11-08 1992-08-18 Lockheed Missiles & Space Company, Inc. Semiconductor device in which gate region is precisely aligned with source and drain regions
DE19743342C2 (de) * 1997-09-30 2002-02-28 Infineon Technologies Ag Feldeffekttransistor hoher Packungsdichte und Verfahren zu seiner Herstellung
CN101490839B (zh) * 2006-07-10 2011-02-23 Nxp股份有限公司 集成电路、发射机应答器、制造集成电路的方法和制造发射机应答器的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL251064A (fr) * 1955-11-04
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3247428A (en) * 1961-09-29 1966-04-19 Ibm Coated objects and methods of providing the protective coverings therefor
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating
US3280391A (en) * 1964-01-31 1966-10-18 Fairchild Camera Instr Co High frequency transistors
US3298863A (en) * 1964-05-08 1967-01-17 Joseph H Mccusker Method for fabricating thin film transistors
US3372063A (en) * 1964-12-22 1968-03-05 Hitachi Ltd Method for manufacturing at least one electrically isolated region of a semiconductive material
US3341743A (en) * 1965-10-21 1967-09-12 Texas Instruments Inc Integrated circuitry having discrete regions of semiconductor material isolated by an insulating material

Also Published As

Publication number Publication date
JPS4811671B1 (fr) 1973-04-14
CH477094A (fr) 1969-08-15
NL141030B (nl) 1974-01-15
SE350367B (fr) 1972-10-23
DE1639241A1 (de) 1970-01-22
FR1551444A (fr) 1968-12-27
US3503124A (en) 1970-03-31
GB1207370A (en) 1970-09-30

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