NL6800508A - - Google Patents
Info
- Publication number
- NL6800508A NL6800508A NL6800508A NL6800508A NL6800508A NL 6800508 A NL6800508 A NL 6800508A NL 6800508 A NL6800508 A NL 6800508A NL 6800508 A NL6800508 A NL 6800508A NL 6800508 A NL6800508 A NL 6800508A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/116—Oxidation, differential
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60907967A | 1967-01-13 | 1967-01-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
NL6800508A true NL6800508A (de) | 1968-07-15 |
NL156542B NL156542B (nl) | 1978-04-17 |
Family
ID=24439275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6800508.A NL156542B (nl) | 1967-01-13 | 1968-01-12 | Veldeffecttransistor met geisoleerde stuurelektrode. |
Country Status (8)
Country | Link |
---|---|
US (1) | US3434021A (de) |
JP (1) | JPS4810268B1 (de) |
DE (1) | DE1639372B2 (de) |
FR (1) | FR1550823A (de) |
GB (1) | GB1210090A (de) |
MY (1) | MY7300263A (de) |
NL (1) | NL156542B (de) |
SE (1) | SE345763B (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3534235A (en) * | 1967-04-17 | 1970-10-13 | Hughes Aircraft Co | Igfet with offset gate and biconductivity channel region |
US3846821A (en) * | 1968-11-04 | 1974-11-05 | Hitachi Ltd | Lateral transistor having emitter region with portions of different impurity concentration |
NL162511C (nl) * | 1969-01-11 | 1980-05-16 | Philips Nv | Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling. |
US3590471A (en) * | 1969-02-04 | 1971-07-06 | Bell Telephone Labor Inc | Fabrication of insulated gate field-effect transistors involving ion implantation |
US3631312A (en) * | 1969-05-15 | 1971-12-28 | Nat Semiconductor Corp | High-voltage mos transistor method and apparatus |
US3624466A (en) * | 1970-03-02 | 1971-11-30 | Gen Instrument Corp | Depletion-type igfet having high-conductivity n-type channel |
JPS5533190B1 (de) * | 1971-03-24 | 1980-08-29 | ||
JPS4916386A (de) * | 1972-05-20 | 1974-02-13 | ||
US3841926A (en) * | 1973-01-02 | 1974-10-15 | Ibm | Integrated circuit fabrication process |
JPS5532032B2 (de) * | 1975-02-20 | 1980-08-22 | ||
US4028717A (en) * | 1975-09-22 | 1977-06-07 | Ibm Corporation | Field effect transistor having improved threshold stability |
US4049477A (en) * | 1976-03-02 | 1977-09-20 | Hewlett-Packard Company | Method for fabricating a self-aligned metal oxide field effect transistor |
US4142197A (en) * | 1977-04-14 | 1979-02-27 | Rca Corp. | Drain extensions for closed COS/MOS logic devices |
FR2388410A1 (fr) * | 1977-04-20 | 1978-11-17 | Thomson Csf | Procede de realisation de transistors a effet de champ de type mos, et transistors realises selon un tel procede |
US4318216A (en) * | 1978-11-13 | 1982-03-09 | Rca Corporation | Extended drain self-aligned silicon gate MOSFET |
US4232327A (en) * | 1978-11-13 | 1980-11-04 | Rca Corporation | Extended drain self-aligned silicon gate MOSFET |
US4505023A (en) * | 1982-09-29 | 1985-03-19 | The United States Of America As Represented By The Secretary Of The Navy | Method of making a planar INP insulated gate field transistor by a virtual self-aligned process |
US5086008A (en) * | 1988-02-29 | 1992-02-04 | Sgs-Thomson Microelectronics S.R.L. | Process for obtaining high-voltage N channel transistors particularly for EEPROM memories with CMOS technology |
US10706991B2 (en) | 2015-02-12 | 2020-07-07 | Sumitomo Electric Industries, Ltd. | Method for producing a superconducting wire material lengthened |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3246173A (en) * | 1964-01-29 | 1966-04-12 | Rca Corp | Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate |
US3328604A (en) * | 1964-08-27 | 1967-06-27 | Rca Corp | Integrated semiconductor logic circuits |
US3328210A (en) * | 1964-10-26 | 1967-06-27 | North American Aviation Inc | Method of treating semiconductor device by ionic bombardment |
US3378738A (en) * | 1965-08-25 | 1968-04-16 | Trw Inc | Traveling wave transistor |
-
1967
- 1967-01-13 US US609079A patent/US3434021A/en not_active Expired - Lifetime
- 1967-12-27 GB GB58658/67A patent/GB1210090A/en not_active Expired
-
1968
- 1968-01-10 DE DE1639372A patent/DE1639372B2/de not_active Ceased
- 1968-01-11 FR FR1550823D patent/FR1550823A/fr not_active Expired
- 1968-01-12 NL NL6800508.A patent/NL156542B/xx not_active IP Right Cessation
- 1968-01-12 JP JP43001756A patent/JPS4810268B1/ja active Pending
- 1968-01-12 SE SE418/68A patent/SE345763B/xx unknown
-
1973
- 1973-12-30 MY MY263/73A patent/MY7300263A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
DE1639372B2 (de) | 1973-11-08 |
US3434021A (en) | 1969-03-18 |
JPS4810268B1 (de) | 1973-04-02 |
FR1550823A (de) | 1968-12-20 |
NL156542B (nl) | 1978-04-17 |
GB1210090A (en) | 1970-10-28 |
MY7300263A (en) | 1973-12-31 |
SE345763B (de) | 1972-06-05 |
DE1639372A1 (de) | 1972-03-30 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NL80 | Abbreviated name of patent owner mentioned of already nullified patent |
Owner name: RADIO OF AMER |
|
V4 | Discontinued because of reaching the maximum lifetime of a patent |