NL6706734A - - Google Patents

Info

Publication number
NL6706734A
NL6706734A NL6706734A NL6706734A NL6706734A NL 6706734 A NL6706734 A NL 6706734A NL 6706734 A NL6706734 A NL 6706734A NL 6706734 A NL6706734 A NL 6706734A NL 6706734 A NL6706734 A NL 6706734A
Authority
NL
Netherlands
Application number
NL6706734A
Other versions
NL158024B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6706734.A priority Critical patent/NL158024B/xx
Priority to DE1764155A priority patent/DE1764155C3/de
Priority to US722071A priority patent/US3602981A/en
Priority to DK217868AA priority patent/DK118413B/da
Priority to CH699168A priority patent/CH505470A/de
Priority to BR198981/68A priority patent/BR6898981D0/pt
Priority to GB1228854D priority patent/GB1228854A/en
Priority to AT452068A priority patent/AT322632B/de
Priority to SE06372/68A priority patent/SE350151B/xx
Priority to ES353792A priority patent/ES353792A1/es
Priority to BE715098D priority patent/BE715098A/xx
Priority to FR1564348D priority patent/FR1564348A/fr
Publication of NL6706734A publication Critical patent/NL6706734A/xx
Publication of NL158024B publication Critical patent/NL158024B/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
NL6706734.A 1967-05-13 1967-05-13 Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze. NL158024B (nl)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NL6706734.A NL158024B (nl) 1967-05-13 1967-05-13 Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.
DE1764155A DE1764155C3 (de) 1967-05-13 1968-04-11 Verfahren zum Herstellen eines Halbleiterbauelementes aus einem Siliciumkörper
US722071A US3602981A (en) 1967-05-13 1968-04-17 Method of manufacturing a semiconductor device and semiconductor device obtained by carrying out said method
DK217868AA DK118413B (da) 1967-05-13 1968-05-09 Fremgangsmåde til fremstilling af en halvlederkomponent.
CH699168A CH505470A (de) 1967-05-13 1968-05-10 Verfahren zur Herstellung einer Halbleitervorrichtung und gemäss diesem Verfahren hergestellte Halbleitervorrichtung
BR198981/68A BR6898981D0 (pt) 1967-05-13 1968-05-10 Processo de fabricacao de dispositivos semicondutores obtidos por intermedio desse referido processormedio desse referido peocesso
GB1228854D GB1228854A (cg-RX-API-DMAC7.html) 1967-05-13 1968-05-10
AT452068A AT322632B (de) 1967-05-13 1968-05-10 Verfahren zur herstellung einer integrierten halbleitervorrichtung
SE06372/68A SE350151B (cg-RX-API-DMAC7.html) 1967-05-13 1968-05-10
ES353792A ES353792A1 (es) 1967-05-13 1968-05-11 Metodo de fabricacion de un dispositivo semiconductor.
BE715098D BE715098A (cg-RX-API-DMAC7.html) 1967-05-13 1968-05-13
FR1564348D FR1564348A (cg-RX-API-DMAC7.html) 1967-05-13 1968-05-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6706734.A NL158024B (nl) 1967-05-13 1967-05-13 Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.

Publications (2)

Publication Number Publication Date
NL6706734A true NL6706734A (cg-RX-API-DMAC7.html) 1968-11-14
NL158024B NL158024B (nl) 1978-09-15

Family

ID=19800122

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6706734.A NL158024B (nl) 1967-05-13 1967-05-13 Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.

Country Status (12)

Country Link
US (1) US3602981A (cg-RX-API-DMAC7.html)
AT (1) AT322632B (cg-RX-API-DMAC7.html)
BE (1) BE715098A (cg-RX-API-DMAC7.html)
BR (1) BR6898981D0 (cg-RX-API-DMAC7.html)
CH (1) CH505470A (cg-RX-API-DMAC7.html)
DE (1) DE1764155C3 (cg-RX-API-DMAC7.html)
DK (1) DK118413B (cg-RX-API-DMAC7.html)
ES (1) ES353792A1 (cg-RX-API-DMAC7.html)
FR (1) FR1564348A (cg-RX-API-DMAC7.html)
GB (1) GB1228854A (cg-RX-API-DMAC7.html)
NL (1) NL158024B (cg-RX-API-DMAC7.html)
SE (1) SE350151B (cg-RX-API-DMAC7.html)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2039141A1 (de) * 1969-08-22 1971-02-25 Molekularelektronik Verfahren zum Herstellen integrierter Halbleiteranordnungen mit komplementaeren Bipolartransistoren
US3859180A (en) * 1971-01-06 1975-01-07 Texas Instruments Inc Method for encapsulating discrete semiconductor chips
US3739462A (en) * 1971-01-06 1973-06-19 Texas Instruments Inc Method for encapsulating discrete semiconductor chips
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
FR2188304B1 (cg-RX-API-DMAC7.html) * 1972-06-15 1977-07-22 Commissariat Energie Atomique
US3944447A (en) * 1973-03-12 1976-03-16 Ibm Corporation Method for fabrication of integrated circuit structure with full dielectric isolation utilizing selective oxidation
US3922705A (en) * 1973-06-04 1975-11-25 Gen Electric Dielectrically isolated integral silicon diaphram or other semiconductor product
DE2460269A1 (de) * 1974-12-19 1976-07-01 Siemens Ag Bipolares transistorpaar mit elektrisch leitend miteinander verbundenen basisgebieten und verfahren zur herstellung des transistorpaares
JPS5252582A (en) * 1975-10-25 1977-04-27 Toshiba Corp Device and production for semiconductor
JPS5317069A (en) * 1976-07-30 1978-02-16 Fujitsu Ltd Semiconductor device and its production
GB1603260A (en) 1978-05-31 1981-11-25 Secr Defence Devices and their fabrication
US4814856A (en) * 1986-05-07 1989-03-21 Kulite Semiconductor Products, Inc. Integral transducer structures employing high conductivity surface features
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
US5488012A (en) * 1993-10-18 1996-01-30 The Regents Of The University Of California Silicon on insulator with active buried regions
KR100330651B1 (ko) * 1997-06-23 2002-03-29 사토 게니치로 Ｉｃ카드용 모듈, ｉｃ카드, 및 ｉｃ카드용 모듈의 제조방법
US6500694B1 (en) * 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6984571B1 (en) * 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US11887945B2 (en) * 2020-09-30 2024-01-30 Wolfspeed, Inc. Semiconductor device with isolation and/or protection structures
WO2022094587A1 (en) 2020-10-29 2022-05-05 Invensas Bonding Technologies, Inc. Direct bonding methods and structures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2875505A (en) * 1952-12-11 1959-03-03 Bell Telephone Labor Inc Semiconductor translating device
US3158788A (en) * 1960-08-15 1964-11-24 Fairchild Camera Instr Co Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material
NL297601A (cg-RX-API-DMAC7.html) * 1962-09-07 Rca Corp
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3355636A (en) * 1965-06-29 1967-11-28 Rca Corp High power, high frequency transistor
US3442011A (en) * 1965-06-30 1969-05-06 Texas Instruments Inc Method for isolating individual devices in an integrated circuit monolithic bar
US3390022A (en) * 1965-06-30 1968-06-25 North American Rockwell Semiconductor device and process for producing same

Also Published As

Publication number Publication date
CH505470A (de) 1971-03-31
FR1564348A (cg-RX-API-DMAC7.html) 1969-04-18
DE1764155B2 (de) 1981-04-09
BE715098A (cg-RX-API-DMAC7.html) 1968-11-13
GB1228854A (cg-RX-API-DMAC7.html) 1971-04-21
DE1764155C3 (de) 1981-11-26
DE1764155A1 (de) 1971-05-13
AT322632B (de) 1975-05-26
DK118413B (da) 1970-08-17
US3602981A (en) 1971-09-07
ES353792A1 (es) 1970-02-01
BR6898981D0 (pt) 1973-01-11
SE350151B (cg-RX-API-DMAC7.html) 1972-10-16
NL158024B (nl) 1978-09-15

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Legal Events

Date Code Title Description
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: PHILIPS

V4 Discontinued because of reaching the maximum lifetime of a patent