NL6615797A - - Google Patents

Info

Publication number
NL6615797A
NL6615797A NL6615797A NL6615797A NL6615797A NL 6615797 A NL6615797 A NL 6615797A NL 6615797 A NL6615797 A NL 6615797A NL 6615797 A NL6615797 A NL 6615797A NL 6615797 A NL6615797 A NL 6615797A
Authority
NL
Netherlands
Application number
NL6615797A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6615797A publication Critical patent/NL6615797A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/967—Semiconductor on specified insulator

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
NL6615797A 1966-02-03 1966-11-09 NL6615797A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US52476566A 1966-02-03 1966-02-03

Publications (1)

Publication Number Publication Date
NL6615797A true NL6615797A (enrdf_load_stackoverflow) 1967-08-04

Family

ID=24090592

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6615797A NL6615797A (enrdf_load_stackoverflow) 1966-02-03 1966-11-09

Country Status (5)

Country Link
US (2) US3508962A (enrdf_load_stackoverflow)
DE (1) DE1619980C3 (enrdf_load_stackoverflow)
FR (1) FR1501313A (enrdf_load_stackoverflow)
GB (1) GB1176871A (enrdf_load_stackoverflow)
NL (1) NL6615797A (enrdf_load_stackoverflow)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930067A (en) * 1966-04-16 1975-12-30 Philips Corp Method of providing polycrystalline layers of elementtary substances on substrates
US4404265A (en) * 1969-10-01 1983-09-13 Rockwell International Corporation Epitaxial composite and method of making
US4368098A (en) * 1969-10-01 1983-01-11 Rockwell International Corporation Epitaxial composite and method of making
US3645230A (en) * 1970-03-05 1972-02-29 Hugle Ind Inc Chemical deposition apparatus
US3847686A (en) * 1970-05-27 1974-11-12 Gen Electric Method of forming silicon epitaxial layers
US3765960A (en) * 1970-11-02 1973-10-16 Ibm Method for minimizing autodoping in epitaxial deposition
US4087571A (en) * 1971-05-28 1978-05-02 Fairchild Camera And Instrument Corporation Controlled temperature polycrystalline silicon nucleation
US3941647A (en) * 1973-03-08 1976-03-02 Siemens Aktiengesellschaft Method of producing epitaxially semiconductor layers
US3963538A (en) * 1974-12-17 1976-06-15 International Business Machines Corporation Two stage heteroepitaxial deposition process for GaP/Si
US3963539A (en) * 1974-12-17 1976-06-15 International Business Machines Corporation Two stage heteroepitaxial deposition process for GaAsP/Si LED's
US4180618A (en) * 1977-07-27 1979-12-25 Corning Glass Works Thin silicon film electronic device
DE2912661C2 (de) * 1979-03-30 1982-06-24 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens
US4279688A (en) * 1980-03-17 1981-07-21 Rca Corporation Method of improving silicon crystal perfection in silicon on sapphire devices
US4309241A (en) * 1980-07-28 1982-01-05 Monsanto Company Gas curtain continuous chemical vapor deposition production of semiconductor bodies
US4464222A (en) * 1980-07-28 1984-08-07 Monsanto Company Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases
WO1982003069A1 (en) * 1981-03-11 1982-09-16 Macdiarmid Alan G Amorphous semiconductor method and devices
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
US4753895A (en) * 1987-02-24 1988-06-28 Hughes Aircraft Company Method of forming low leakage CMOS device on insulating substrate
US4826300A (en) * 1987-07-30 1989-05-02 Hughes Aircraft Company Silicon-on-sapphire liquid crystal light valve and method
EP0307108A1 (en) * 1987-08-24 1989-03-15 Canon Kabushiki Kaisha Method of forming crystal
JPH0610144A (ja) * 1992-06-29 1994-01-18 Matsushita Electric Ind Co Ltd 低蒸気圧材料供給装置
KR101057189B1 (ko) 2008-11-12 2011-08-16 주식회사 하이닉스반도체 단채널 효과를 억제하는 트랜지스터 및 그 제조방법
FR3101782B1 (fr) 2019-10-09 2021-09-24 Pierre Chovrelat Barre de Suspension en Bois Télescopique

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL262949A (enrdf_load_stackoverflow) * 1960-04-02 1900-01-01
NL270516A (enrdf_load_stackoverflow) * 1960-11-30
DE1254607B (de) * 1960-12-08 1967-11-23 Siemens Ag Verfahren zum Herstellen von einkristallinen Halbleiterkoerpoern aus der Gasphase
US3312572A (en) * 1963-06-07 1967-04-04 Barnes Eng Co Process of preparing thin film semiconductor thermistor bolometers and articles

Also Published As

Publication number Publication date
FR1501313A (fr) 1967-11-10
US3508962A (en) 1970-04-28
DE1619980C3 (de) 1975-05-28
DE1619980A1 (de) 1970-04-09
DE1619980B2 (de) 1971-01-14
USB524765I5 (enrdf_load_stackoverflow) 1900-01-01
GB1176871A (en) 1970-01-07

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