NL6615376A - - Google Patents

Info

Publication number
NL6615376A
NL6615376A NL6615376A NL6615376A NL6615376A NL 6615376 A NL6615376 A NL 6615376A NL 6615376 A NL6615376 A NL 6615376A NL 6615376 A NL6615376 A NL 6615376A NL 6615376 A NL6615376 A NL 6615376A
Authority
NL
Netherlands
Application number
NL6615376A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6615376A priority Critical patent/NL6615376A/xx
Priority to DE19671619988 priority patent/DE1619988A1/de
Priority to US678438A priority patent/US3546032A/en
Priority to GB48956/67A priority patent/GB1194017A/en
Priority to BE705851D priority patent/BE705851A/xx
Priority to CH1518167A priority patent/CH471470A/de
Priority to SE14846/67A priority patent/SE328850B/xx
Priority to FR126516A priority patent/FR1543127A/fr
Publication of NL6615376A publication Critical patent/NL6615376A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/44—Gallium phosphide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/02—Single-crystal growth from melt solutions using molten solvents by evaporation of the molten solvent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/166—Traveling solvent method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material
    • Y10S252/951—Doping agent source material for vapor transport

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6615376A 1966-11-01 1966-11-01 NL6615376A (it)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL6615376A NL6615376A (it) 1966-11-01 1966-11-01
DE19671619988 DE1619988A1 (de) 1966-11-01 1967-10-18 Verfahren zur Herstellung von Halbleitervorrichtungen auf aus Einkristallen bestehenden Substraten
US678438A US3546032A (en) 1966-11-01 1967-10-26 Method of manufacturing semiconductor devices on substrates consisting of single crystals
GB48956/67A GB1194017A (en) 1966-11-01 1967-10-27 Improvements in and relating to Methods of Manufacturing Semiconductor Devices
BE705851D BE705851A (it) 1966-11-01 1967-10-30
CH1518167A CH471470A (de) 1966-11-01 1967-10-30 Verfahren zur Herstellung einer Halbleitervorrichtung auf aus Einkristallen bestehenden Substraten
SE14846/67A SE328850B (it) 1966-11-01 1967-10-30
FR126516A FR1543127A (fr) 1966-11-01 1967-10-31 Procédé de fabrication de dispositifs semiconducteurs sur des substrats monocristrats lins

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6615376A NL6615376A (it) 1966-11-01 1966-11-01

Publications (1)

Publication Number Publication Date
NL6615376A true NL6615376A (it) 1968-05-02

Family

ID=19798060

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6615376A NL6615376A (it) 1966-11-01 1966-11-01

Country Status (7)

Country Link
US (1) US3546032A (it)
BE (1) BE705851A (it)
CH (1) CH471470A (it)
DE (1) DE1619988A1 (it)
GB (1) GB1194017A (it)
NL (1) NL6615376A (it)
SE (1) SE328850B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL143436B (nl) * 1966-12-14 1974-10-15 Philips Nv Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen.
CH539950A (de) * 1971-12-20 1973-07-31 Bbc Brown Boveri & Cie Verfahren und Einrichtung zum Gettern von Halbleitern
US3933539A (en) * 1973-12-26 1976-01-20 Texas Instruments Incorporated Solution growth system for the preparation of semiconductor materials
US4047986A (en) * 1976-05-10 1977-09-13 Integrated Display Systems, Inc. Epitaxial film formation of a light emitting diode and the product thereof
US4341590A (en) * 1981-04-27 1982-07-27 Sperry Corporation Single surface LPE crystal growth
US4789537A (en) * 1985-12-30 1988-12-06 The United States Of America As Represented By The United States Department Of Energy Prealloyed catalyst for growing silicon carbide whiskers
US4702901A (en) * 1986-03-12 1987-10-27 The United States Of America As Represented By The United States Department Of Energy Process for growing silicon carbide whiskers by undercooling
US5611955A (en) * 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2996456A (en) * 1958-09-08 1961-08-15 Transitron Electronic Corp Method of growing silicon carbide crystals
US3082126A (en) * 1959-06-19 1963-03-19 Westinghouse Electric Corp Producing diffused junctions in silicon carbide
US3124454A (en) * 1961-06-20 1964-03-10 Method of making silicon carbide negative resistance diode
US3186880A (en) * 1962-10-10 1965-06-01 Martin Marietta Corp Method of producing unsupported epitaxial films of germanium by evaporating the substrate
US3205101A (en) * 1963-06-13 1965-09-07 Tyco Laboratories Inc Vacuum cleaning and vapor deposition of solvent material prior to effecting traveling solvent process
US3305385A (en) * 1963-06-27 1967-02-21 Hughes Aircraft Co Method for the preparation of gallium phosphide
US3278342A (en) * 1963-10-14 1966-10-11 Westinghouse Electric Corp Method of growing crystalline members completely within the solution melt
US3290188A (en) * 1964-01-10 1966-12-06 Hoffman Electronics Corp Epitaxial alloy semiconductor devices and process for making them
DE1521789A1 (de) * 1964-07-15 1969-10-16 Ibm Deutschland Verfahren zum chemischen Feinpolieren
US3396059A (en) * 1964-09-14 1968-08-06 Nat Res Corp Process of growing silicon carbide p-nu junction electroluminescing diodes using a modified travelling solvent method
US3427211A (en) * 1965-07-28 1969-02-11 Ibm Process of making gallium phosphide dendritic crystals with grown in p-n light emitting junctions

Also Published As

Publication number Publication date
CH471470A (de) 1969-04-15
BE705851A (it) 1968-04-30
SE328850B (it) 1970-09-28
DE1619988A1 (de) 1970-03-26
US3546032A (en) 1970-12-08
GB1194017A (en) 1970-06-10

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