NL6611718A - - Google Patents
Info
- Publication number
- NL6611718A NL6611718A NL6611718A NL6611718A NL6611718A NL 6611718 A NL6611718 A NL 6611718A NL 6611718 A NL6611718 A NL 6611718A NL 6611718 A NL6611718 A NL 6611718A NL 6611718 A NL6611718 A NL 6611718A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42308—Gate electrodes for thyristors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B39/00—Other azo dyes prepared by diazotising and coupling
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B63/00—Lakes
- C09B63/005—Metal lakes of dyes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0817—Thyristors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Thyristors (AREA)
- Coloring (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US415292A US3356862A (en) | 1964-12-02 | 1964-12-02 | High speed controlled rectifier |
GB35784/65A GB1132441A (en) | 1964-12-02 | 1965-08-20 | Pigment compositions |
GB35784/66A GB1148738A (en) | 1965-09-29 | 1966-08-10 | Method of Preparing an Oxygen Cotaining Thin Inorganic Film Adherently Deposited on a Heat-Resistant Substrate. |
NL6611711A NL6611711A (xx) | 1964-12-02 | 1966-08-19 | |
FR74898A FR1497635A (fr) | 1964-12-02 | 1966-09-01 | Perfectionnements aux redresseurs commandés |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6611718A true NL6611718A (xx) | 1967-02-21 |
Family
ID=27514821
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6611718A NL6611718A (xx) | 1964-12-02 | 1966-08-19 | |
NL6611711A NL6611711A (xx) | 1964-12-02 | 1966-08-19 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6611711A NL6611711A (xx) | 1964-12-02 | 1966-08-19 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3356862A (xx) |
FR (1) | FR1497635A (xx) |
GB (1) | GB1132441A (xx) |
NL (2) | NL6611718A (xx) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1514563A1 (de) * | 1965-09-07 | 1969-06-19 | Semikron Gleichrichterbau | Steuerbares Halbleiterbauelement |
DE1514577B2 (de) * | 1965-09-21 | 1973-06-20 | Semikron Gesellschaft fur Gleich richterbau und Elektronik mbH, 8500 Nurn berg | Verfahren zum herstellen einer mehrzahl von thyristoren mit legierter kathodenzone |
US3440454A (en) * | 1966-08-18 | 1969-04-22 | Int Rectifier Corp | High rise of current switching controlled rectifier |
DE1564755A1 (de) * | 1966-11-10 | 1970-05-14 | Siemens Ag | Leistungstransistor |
US3562610A (en) * | 1967-05-25 | 1971-02-09 | Westinghouse Electric Corp | Controlled rectifier with improved switching characteristics |
US3577042A (en) * | 1967-06-19 | 1971-05-04 | Int Rectifier Corp | Gate connection for controlled rectifiers |
SE320729B (xx) * | 1968-06-05 | 1970-02-16 | Asea Ab | |
JPS5025795B1 (xx) * | 1969-08-06 | 1975-08-26 | ||
US3609476A (en) * | 1970-06-26 | 1971-09-28 | Gen Electric | Interdigitated structures for gate turnoff thyristors and for transistors |
JPS5619109B2 (xx) * | 1971-10-01 | 1981-05-06 | ||
JPS5532027B2 (xx) * | 1973-02-14 | 1980-08-22 | ||
JPS50114183A (xx) * | 1974-02-15 | 1975-09-06 | ||
JPS55128870A (en) * | 1979-03-26 | 1980-10-06 | Semiconductor Res Found | Electrostatic induction thyristor and semiconductor device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB869680A (en) * | 1959-03-26 | 1961-06-07 | Ass Elect Ind | Improvements relating to semi-conductor devices |
US3025438A (en) * | 1959-09-18 | 1962-03-13 | Tungsol Electric Inc | Field effect transistor |
DE1103389B (de) * | 1959-10-14 | 1961-03-30 | Siemens Ag | Schaltanordnung mit einer Vierschichthalbleiteranordnung |
US3210621A (en) * | 1960-06-20 | 1965-10-05 | Westinghouse Electric Corp | Plural emitter semiconductor device |
BE623187A (xx) * | 1961-10-06 | |||
US3213339A (en) * | 1962-07-02 | 1965-10-19 | Westinghouse Electric Corp | Semiconductor device for controlling the continuity of multiple electric paths |
-
1964
- 1964-12-02 US US415292A patent/US3356862A/en not_active Expired - Lifetime
-
1965
- 1965-08-20 GB GB35784/65A patent/GB1132441A/en not_active Expired
-
1966
- 1966-08-19 NL NL6611718A patent/NL6611718A/xx unknown
- 1966-08-19 NL NL6611711A patent/NL6611711A/xx unknown
- 1966-09-01 FR FR74898A patent/FR1497635A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3356862A (en) | 1967-12-05 |
GB1132441A (en) | 1968-10-30 |
FR1497635A (fr) | 1967-10-13 |
NL6611711A (xx) | 1968-02-20 |