NL6611536A - - Google Patents

Info

Publication number
NL6611536A
NL6611536A NL6611536A NL6611536A NL6611536A NL 6611536 A NL6611536 A NL 6611536A NL 6611536 A NL6611536 A NL 6611536A NL 6611536 A NL6611536 A NL 6611536A NL 6611536 A NL6611536 A NL 6611536A
Authority
NL
Netherlands
Application number
NL6611536A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6611536A priority Critical patent/NL6611536A/xx
Priority to DE19671614271 priority patent/DE1614271A1/de
Priority to JP5196567A priority patent/JPS4615454B1/ja
Priority to ES344101A priority patent/ES344101A1/es
Priority to SE11440/67A priority patent/SE349893B/xx
Priority to GB37169/67A priority patent/GB1193715A/en
Priority to CH1139167A priority patent/CH514234A/de
Priority to BE702691D priority patent/BE702691A/xx
Priority to AT747667A priority patent/AT281119B/de
Priority to US660253A priority patent/US3585071A/en
Priority to FR118123A priority patent/FR1546615A/fr
Publication of NL6611536A publication Critical patent/NL6611536A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/227—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)
  • Drying Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
NL6611536A 1966-08-17 1966-08-17 NL6611536A (xx)

Priority Applications (11)

Application Number Priority Date Filing Date Title
NL6611536A NL6611536A (xx) 1966-08-17 1966-08-17
DE19671614271 DE1614271A1 (de) 1966-08-17 1967-08-12 Verfahren zur Herstellung einer Halbleitervorrichtung,die ein Halbleitermaterial des Typs A?B?enthaelt,und nach diesem Verfahren hergestellte Halbleitervorrichtung
JP5196567A JPS4615454B1 (xx) 1966-08-17 1967-08-14
ES344101A ES344101A1 (es) 1966-08-17 1967-08-14 Metodo de fabricacion de un dispositivo semiconductor.
SE11440/67A SE349893B (xx) 1966-08-17 1967-08-14
GB37169/67A GB1193715A (en) 1966-08-17 1967-08-14 Improvements in and relating to Methods of manufacturing Semiconductor Devices
CH1139167A CH514234A (de) 1966-08-17 1967-08-14 Verfahren zur Herstellung einer Halbleitervorrichtung, die ein Halbleitermaterial des Typs AIIBVI enthält, und nach diesem Verfahren hergestellte Halbleitervorrichtung
BE702691D BE702691A (xx) 1966-08-17 1967-08-14
AT747667A AT281119B (de) 1966-08-17 1967-08-14 Verfahren zur Herstellung einer Halbleitervorrichtung, die ein Halbleitermaterial des Typs A<II>B<VI> enthält
US660253A US3585071A (en) 1966-08-17 1967-08-14 Method of manufacturing a semiconductor device including a semiconductor material of the aiibvi type,and semiconductor device manufactured by this method
FR118123A FR1546615A (fr) 1966-08-17 1967-08-17 Dispositif semiconducteur contenant un matériau semiconducteur du groupe ii-vi et procédé pour sa fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6611536A NL6611536A (xx) 1966-08-17 1966-08-17

Publications (1)

Publication Number Publication Date
NL6611536A true NL6611536A (xx) 1968-02-19

Family

ID=19797427

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6611536A NL6611536A (xx) 1966-08-17 1966-08-17

Country Status (11)

Country Link
US (1) US3585071A (xx)
JP (1) JPS4615454B1 (xx)
AT (1) AT281119B (xx)
BE (1) BE702691A (xx)
CH (1) CH514234A (xx)
DE (1) DE1614271A1 (xx)
ES (1) ES344101A1 (xx)
FR (1) FR1546615A (xx)
GB (1) GB1193715A (xx)
NL (1) NL6611536A (xx)
SE (1) SE349893B (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4203785A (en) * 1978-11-30 1980-05-20 Rca Corporation Method of epitaxially depositing cadmium sulfide
DE3028718C2 (de) * 1979-07-31 1982-08-19 Sharp K.K., Osaka Dünnfilmtransistor in Verbindung mit einer Anzeigevorrichtung
US5053845A (en) * 1980-05-23 1991-10-01 Ricoh Company, Ltd. Thin-film device
JP4425878B2 (ja) * 2005-10-31 2010-03-03 韓國電子通信研究院 カルコゲナイド系元素を含む光伝導層を有するフォト薄膜トランジスタ及びこれを用いたイメージセンサの単位セル

Also Published As

Publication number Publication date
GB1193715A (en) 1970-06-03
ES344101A1 (es) 1968-09-16
FR1546615A (fr) 1968-11-22
CH514234A (de) 1971-10-15
SE349893B (xx) 1972-10-09
DE1614271A1 (de) 1970-03-26
BE702691A (xx) 1968-02-14
JPS4615454B1 (xx) 1971-04-26
AT281119B (de) 1970-05-11
US3585071A (en) 1971-06-15

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