NL6610259A - - Google Patents

Info

Publication number
NL6610259A
NL6610259A NL6610259A NL6610259A NL6610259A NL 6610259 A NL6610259 A NL 6610259A NL 6610259 A NL6610259 A NL 6610259A NL 6610259 A NL6610259 A NL 6610259A NL 6610259 A NL6610259 A NL 6610259A
Authority
NL
Netherlands
Application number
NL6610259A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6610259A publication Critical patent/NL6610259A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0062Processes for devices with an active region comprising only III-V compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258Diffusion into or out of AIIIBV compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314Inorganic layers
    • H01L21/316Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004Devices characterised by their operation
    • H01L33/0008Devices characterised by their operation having p-n or hi-lo junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
NL6610259A 1965-07-21 1966-07-21 NL6610259A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB30996/65A GB1094831A (en) 1965-07-21 1965-07-21 Semiconductor junction devices

Publications (1)

Publication Number Publication Date
NL6610259A true NL6610259A (xx) 1967-01-23

Family

ID=10316366

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6610259A NL6610259A (xx) 1965-07-21 1966-07-21

Country Status (5)

Country Link
US (1) US3427516A (xx)
DE (1) DE1539392A1 (xx)
ES (1) ES329361A1 (xx)
GB (1) GB1094831A (xx)
NL (1) NL6610259A (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3675064A (en) * 1970-02-16 1972-07-04 Motorola Inc Directed emission light emitting diode
FR2134862A5 (xx) * 1971-04-22 1972-12-08 Radiotechnique Compelec
DE2159592C3 (de) * 1971-12-01 1981-12-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Integrierte Halbleiteranordnung
US4144635A (en) * 1974-11-22 1979-03-20 Stanley Electric Co., Ltd. Method of manufacturing an indicating element
USRE30556E (en) * 1974-11-22 1981-03-24 Stanley Electric Co., Ltd. Indicating element and method of manufacturing same
JP3706458B2 (ja) * 1997-03-28 2005-10-12 ローム株式会社 半導体発光素子
KR100706944B1 (ko) * 2005-10-17 2007-04-12 삼성전기주식회사 질화물계 반도체 발광소자

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
US2858275A (en) * 1954-12-23 1958-10-28 Siemens Ag Mixed-crystal semiconductor devices
US3111611A (en) * 1957-09-24 1963-11-19 Ibm Graded energy gap semiconductor devices
US3124640A (en) * 1960-01-20 1964-03-10 Figure
US3152023A (en) * 1961-10-25 1964-10-06 Cutler Hammer Inc Method of making semiconductor devices
NL295293A (xx) * 1962-07-13

Also Published As

Publication number Publication date
GB1094831A (en) 1967-12-13
US3427516A (en) 1969-02-11
ES329361A1 (es) 1967-05-16
DE1539392A1 (de) 1969-10-16

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