NL6609160A - - Google Patents
Info
- Publication number
- NL6609160A NL6609160A NL6609160A NL6609160A NL6609160A NL 6609160 A NL6609160 A NL 6609160A NL 6609160 A NL6609160 A NL 6609160A NL 6609160 A NL6609160 A NL 6609160A NL 6609160 A NL6609160 A NL 6609160A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02609—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US468205A US3414434A (en) | 1965-06-30 | 1965-06-30 | Single crystal silicon on spinel insulators |
Publications (1)
Publication Number | Publication Date |
---|---|
NL6609160A true NL6609160A (US06338842-20020115-C00009.png) | 1967-01-02 |
Family
ID=23858839
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL6609160A NL6609160A (US06338842-20020115-C00009.png) | 1965-06-30 | 1966-06-30 |
Country Status (3)
Country | Link |
---|---|
US (1) | US3414434A (US06338842-20020115-C00009.png) |
GB (1) | GB1119769A (US06338842-20020115-C00009.png) |
NL (1) | NL6609160A (US06338842-20020115-C00009.png) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3515957A (en) * | 1967-05-19 | 1970-06-02 | Nippon Electric Co | Semiconductor device having low capacitance junction |
FR1597033A (US06338842-20020115-C00009.png) * | 1968-06-19 | 1970-06-22 | ||
DE1794273A1 (de) * | 1968-09-30 | 1971-09-23 | Siemens Ag | Verfahren zum Herstellen epitaktischer Halbleiterschichten auf Fremdsubstraten |
US3579012A (en) * | 1968-10-16 | 1971-05-18 | Philips Corp | Imaging device with combined thin monocrystalline semiconductive target-window assembly |
US3658586A (en) * | 1969-04-11 | 1972-04-25 | Rca Corp | Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals |
US3766447A (en) * | 1971-10-20 | 1973-10-16 | Harris Intertype Corp | Heteroepitaxial structure |
US3969753A (en) * | 1972-06-30 | 1976-07-13 | Rockwell International Corporation | Silicon on sapphire oriented for maximum mobility |
US4177321A (en) * | 1972-07-25 | 1979-12-04 | Semiconductor Research Foundation | Single crystal of semiconductive material on crystal of insulating material |
US4044372A (en) * | 1974-08-05 | 1977-08-23 | Sensor Technology, Inc. | Photovoltaic cell having controllable spectral response |
US4124860A (en) * | 1975-02-27 | 1978-11-07 | Optron, Inc. | Optical coupler |
US4180618A (en) * | 1977-07-27 | 1979-12-25 | Corning Glass Works | Thin silicon film electronic device |
JPS57169246A (en) * | 1981-04-10 | 1982-10-18 | Nec Corp | Dielectric epitaxial film material |
US4447497A (en) * | 1982-05-03 | 1984-05-08 | Rockwell International Corporation | CVD Process for producing monocrystalline silicon-on-cubic zirconia and article produced thereby |
US4509990A (en) * | 1982-11-15 | 1985-04-09 | Hughes Aircraft Company | Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates |
US4590130A (en) * | 1984-03-26 | 1986-05-20 | General Electric Company | Solid state zone recrystallization of semiconductor material on an insulator |
US4753895A (en) * | 1987-02-24 | 1988-06-28 | Hughes Aircraft Company | Method of forming low leakage CMOS device on insulating substrate |
DE58902973D1 (de) * | 1989-05-23 | 1993-01-21 | Bock & Schupp | Schmuckstueck. |
US5750000A (en) * | 1990-08-03 | 1998-05-12 | Canon Kabushiki Kaisha | Semiconductor member, and process for preparing same and semiconductor device formed by use of same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL288035A (US06338842-20020115-C00009.png) * | 1962-01-24 | |||
US3177100A (en) * | 1963-09-09 | 1965-04-06 | Rca Corp | Depositing epitaxial layer of silicon from a vapor mixture of sih4 and h3 |
-
1965
- 1965-06-30 US US468205A patent/US3414434A/en not_active Expired - Lifetime
-
1966
- 1966-06-30 GB GB29443/66A patent/GB1119769A/en not_active Expired
- 1966-06-30 NL NL6609160A patent/NL6609160A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US3414434A (en) | 1968-12-03 |
GB1119769A (en) | 1968-07-10 |