NL6608970A - - Google Patents

Info

Publication number
NL6608970A
NL6608970A NL6608970A NL6608970A NL6608970A NL 6608970 A NL6608970 A NL 6608970A NL 6608970 A NL6608970 A NL 6608970A NL 6608970 A NL6608970 A NL 6608970A NL 6608970 A NL6608970 A NL 6608970A
Authority
NL
Netherlands
Application number
NL6608970A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6608970A publication Critical patent/NL6608970A/xx

Links

Classifications

    • H10P14/6504
    • H10P14/6512
    • H10P14/6309
    • H10P14/6322
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/903Catalyst aided deposition
NL6608970A 1965-07-05 1966-06-28 NL6608970A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES97992A DE1286872B (de) 1965-07-05 1965-07-05 Verfahren zum Herstellen von homogenen Oxidschichten auf Halbleiterkristallen

Publications (1)

Publication Number Publication Date
NL6608970A true NL6608970A (enExample) 1967-01-06

Family

ID=7521145

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6608970A NL6608970A (enExample) 1965-07-05 1966-06-28

Country Status (7)

Country Link
US (1) US3518115A (enExample)
AT (1) AT261003B (enExample)
CH (1) CH486121A (enExample)
DE (1) DE1286872B (enExample)
GB (1) GB1106596A (enExample)
NL (1) NL6608970A (enExample)
SE (1) SE309968B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5137147B2 (enExample) * 1971-08-20 1976-10-14
US3984587A (en) * 1973-07-23 1976-10-05 Rca Corporation Chemical vapor deposition of luminescent films
JPS5559729A (en) * 1978-10-27 1980-05-06 Fujitsu Ltd Forming method of semiconductor surface insulating film
US4214919A (en) * 1978-12-28 1980-07-29 Burroughs Corporation Technique of growing thin silicon oxide films utilizing argon in the contact gas
US4207138A (en) * 1979-01-17 1980-06-10 Rca Corporation Mercury vapor leaching from microelectronic substrates
JPS56161646A (en) * 1980-05-19 1981-12-12 Fujitsu Ltd Manufacture of semiconductor device
US4376796A (en) * 1981-10-27 1983-03-15 Thermco Products Corporation Processing silicon wafers employing processing gas atmospheres of similar molecular weight

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2543710A (en) * 1948-01-15 1951-02-27 Westinghouse Electric Corp Process for producing insulating iron oxide coatings
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon
US3331716A (en) * 1962-06-04 1967-07-18 Philips Corp Method of manufacturing a semiconductor device by vapor-deposition
US3258359A (en) * 1963-04-08 1966-06-28 Siliconix Inc Semiconductor etch and oxidation process

Also Published As

Publication number Publication date
DE1286872B (de) 1969-01-09
AT261003B (de) 1968-04-10
US3518115A (en) 1970-06-30
SE309968B (enExample) 1969-04-14
CH486121A (de) 1970-02-15
GB1106596A (en) 1968-03-20

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