NL6608959A - - Google Patents

Info

Publication number
NL6608959A
NL6608959A NL6608959A NL6608959A NL6608959A NL 6608959 A NL6608959 A NL 6608959A NL 6608959 A NL6608959 A NL 6608959A NL 6608959 A NL6608959 A NL 6608959A NL 6608959 A NL6608959 A NL 6608959A
Authority
NL
Netherlands
Application number
NL6608959A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6608959A publication Critical patent/NL6608959A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • H10P10/12Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00Bonding of wafers, substrates or parts of devices
    • H10P10/12Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/10Arrangements for heating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/20Arrangements for cooling
    • H10W40/22Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/012Bonding, e.g. electrostatic for strain gauges
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/085Isolated-integrated
NL6608959A 1965-06-29 1966-06-28 NL6608959A (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US467885A US3355636A (en) 1965-06-29 1965-06-29 High power, high frequency transistor
US71827467A 1967-11-01 1967-11-01

Publications (1)

Publication Number Publication Date
NL6608959A true NL6608959A (https=) 1966-12-30

Family

ID=27042210

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6608959A NL6608959A (https=) 1965-06-29 1966-06-28

Country Status (6)

Country Link
US (2) US3355636A (https=)
BR (1) BR6680818D0 (https=)
ES (1) ES328416A1 (https=)
GB (1) GB1127824A (https=)
NL (1) NL6608959A (https=)
SE (1) SE336406B (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1514563A1 (de) * 1965-09-07 1969-06-19 Semikron Gleichrichterbau Steuerbares Halbleiterbauelement
NL6612022A (https=) * 1966-08-26 1968-02-27
NL158024B (nl) * 1967-05-13 1978-09-15 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting en halfgeleiderinrichting verkregen door toepassing van de werkwijze.
FR96113E (fr) * 1967-12-06 1972-05-19 Ibm Dispositif semi-conducteur.
US3789276A (en) * 1968-07-15 1974-01-29 Texas Instruments Inc Multilayer microelectronic circuitry techniques
US3591921A (en) * 1968-09-30 1971-07-13 Varo Method for making rectifier stacks
GB1335201A (en) * 1970-05-21 1973-10-24 Lucas Industries Ltd Method of manufacturing semi-conductor devices
US3753289A (en) * 1970-11-02 1973-08-21 Gen Electric Process for manufacture of substrate supported semiconductive stack
US3769561A (en) * 1972-02-24 1973-10-30 Us Navy Current limiting integrated circuit
US3883948A (en) * 1974-01-02 1975-05-20 Signetics Corp Semiconductor structure and method
US4261781A (en) * 1979-01-31 1981-04-14 International Business Machines Corporation Process for forming compound semiconductor bodies
DE2926741C2 (de) * 1979-07-03 1982-09-09 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Feldeffekt-Transistor und Verfahren zu seiner Herstellung
JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof
US4473834A (en) * 1982-04-19 1984-09-25 Rockwell International Corporation Light emitting transistor array
EP0161740B1 (en) * 1984-05-09 1991-06-12 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor substrate
JPS61112345A (ja) * 1984-11-07 1986-05-30 Toshiba Corp 半導体装置の製造方法
CA1251514A (en) * 1985-02-20 1989-03-21 Tadashi Sakai Ion selective field effect transistor sensor
JPS62154614A (ja) * 1985-12-27 1987-07-09 Toshiba Corp 接合型半導体基板の製造方法
US4704785A (en) * 1986-08-01 1987-11-10 Texas Instruments Incorporated Process for making a buried conductor by fusing two wafers
DE4321804A1 (de) * 1993-06-30 1995-01-12 Ranco Inc Verfahren zur Herstellung von Kleinbauelementen
US6525335B1 (en) 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
FR2903809B1 (fr) 2006-07-13 2008-10-17 Soitec Silicon On Insulator Traitement thermique de stabilisation d'interface e collage.
CN113320036B (zh) * 2021-06-18 2024-02-13 常州时创能源股份有限公司 条状硅材的开方截断工艺及其应用

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3091701A (en) * 1956-03-26 1963-05-28 Raytheon Co High frequency response transistors
US3114865A (en) * 1956-08-08 1963-12-17 Bendix Corp Semiconductor and unitary connector structure comprising alternately stacked base andemitter leads
US3044147A (en) * 1959-04-21 1962-07-17 Pacific Semiconductors Inc Semiconductor technology method of contacting a body
US3152939A (en) * 1960-08-12 1964-10-13 Westinghouse Electric Corp Process for preparing semiconductor members
US3171068A (en) * 1960-10-19 1965-02-23 Merck & Co Inc Semiconductor diodes
US3166448A (en) * 1961-04-07 1965-01-19 Clevite Corp Method for producing rib transistor
FR1297155A (fr) * 1961-04-18 1962-06-29 Alsacienne Constr Meca Procédé pour l'obtention de thermocouples
NL278058A (https=) * 1961-05-26
NL281360A (https=) * 1961-07-26 1900-01-01
US3290760A (en) * 1963-12-16 1966-12-13 Rca Corp Method of making a composite insulator semiconductor wafer
US3307239A (en) * 1964-02-18 1967-03-07 Bell Telephone Labor Inc Method of making integrated semiconductor devices
US3383760A (en) * 1965-08-09 1968-05-21 Rca Corp Method of making semiconductor devices

Also Published As

Publication number Publication date
BR6680818D0 (pt) 1973-05-15
DE1564535A1 (de) 1972-02-17
DE1564535B2 (de) 1973-02-01
GB1127824A (en) 1968-09-18
US3355636A (en) 1967-11-28
US3488835A (en) 1970-01-13
ES328416A1 (es) 1968-05-01
SE336406B (https=) 1971-07-05

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