NL6606714A - - Google Patents

Info

Publication number
NL6606714A
NL6606714A NL6606714A NL6606714A NL6606714A NL 6606714 A NL6606714 A NL 6606714A NL 6606714 A NL6606714 A NL 6606714A NL 6606714 A NL6606714 A NL 6606714A NL 6606714 A NL6606714 A NL 6606714A
Authority
NL
Netherlands
Application number
NL6606714A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6606714A priority Critical patent/NL6606714A/xx
Priority to US635091A priority patent/US3482152A/en
Priority to GB22096/67A priority patent/GB1189355A/en
Priority to ES340523A priority patent/ES340523A1/es
Priority to DE1614248A priority patent/DE1614248C3/de
Priority to AT459167A priority patent/AT277320B/de
Priority to CH688667A priority patent/CH478461A/de
Priority to BE698544D priority patent/BE698544A/xx
Priority to FR106658A priority patent/FR1524522A/fr
Publication of NL6606714A publication Critical patent/NL6606714A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/111Field plates
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H10W20/484
    • H10W72/90
    • H10W72/5363
    • H10W72/59
    • H10W72/932

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)
NL6606714A 1966-05-17 1966-05-17 NL6606714A (cg-RX-API-DMAC10.html)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL6606714A NL6606714A (cg-RX-API-DMAC10.html) 1966-05-17 1966-05-17
US635091A US3482152A (en) 1966-05-17 1967-05-01 Semiconductor devices having a field effect transistor structure
GB22096/67A GB1189355A (en) 1966-05-17 1967-05-12 Improvements in and relating to Semiconductor Devices
ES340523A ES340523A1 (es) 1966-05-17 1967-05-13 Un dispositivo semiconductor.
DE1614248A DE1614248C3 (de) 1966-05-17 1967-05-13 Sperrschicht-Feldeffekttransistor, Verwendung desselben in einer Schaltung zur Verstärkung elektrischer Signale und Verfahren zu seiner Herstellung
AT459167A AT277320B (de) 1966-05-17 1967-05-16 Halbleitervorrichtung mit einer Feldeffekttransistorstruktur
CH688667A CH478461A (de) 1966-05-17 1967-05-16 Feldeffekttransistor mit einem Halbleiterkörper
BE698544D BE698544A (cg-RX-API-DMAC10.html) 1966-05-17 1967-05-16
FR106658A FR1524522A (fr) 1966-05-17 1967-05-17 Dispositif semi-conducteur renfermant une structure de transistor à effet de champ et son procédé de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6606714A NL6606714A (cg-RX-API-DMAC10.html) 1966-05-17 1966-05-17

Publications (1)

Publication Number Publication Date
NL6606714A true NL6606714A (cg-RX-API-DMAC10.html) 1967-11-20

Family

ID=19796621

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6606714A NL6606714A (cg-RX-API-DMAC10.html) 1966-05-17 1966-05-17

Country Status (8)

Country Link
US (1) US3482152A (cg-RX-API-DMAC10.html)
AT (1) AT277320B (cg-RX-API-DMAC10.html)
BE (1) BE698544A (cg-RX-API-DMAC10.html)
CH (1) CH478461A (cg-RX-API-DMAC10.html)
DE (1) DE1614248C3 (cg-RX-API-DMAC10.html)
ES (1) ES340523A1 (cg-RX-API-DMAC10.html)
GB (1) GB1189355A (cg-RX-API-DMAC10.html)
NL (1) NL6606714A (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108628038A (zh) * 2018-06-28 2018-10-09 京东方科技集团股份有限公司 发光晶体管及其发光方法、阵列基板和显示装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4063271A (en) * 1972-07-26 1977-12-13 Texas Instruments Incorporated FET and bipolar device and circuit process with maximum junction control
JPS54157092A (en) * 1978-05-31 1979-12-11 Nec Corp Semiconductor integrated circuit device
US4376983A (en) * 1980-03-21 1983-03-15 Texas Instruments Incorporated High density dynamic memory cell
US4888562A (en) * 1987-09-09 1989-12-19 National Semiconductor Corporation Low noise, high speed current or voltage amplifier
US5027082A (en) * 1990-05-01 1991-06-25 Microwave Modules & Devices, Inc. Solid state RF power amplifier having improved efficiency and reduced distortion

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL134388C (cg-RX-API-DMAC10.html) * 1964-05-15 1900-01-01
US3414740A (en) * 1965-09-08 1968-12-03 Ibm Integrated insulated gate field effect logic circuitry

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108628038A (zh) * 2018-06-28 2018-10-09 京东方科技集团股份有限公司 发光晶体管及其发光方法、阵列基板和显示装置
CN108628038B (zh) * 2018-06-28 2021-02-26 京东方科技集团股份有限公司 发光晶体管及其发光方法、阵列基板和显示装置

Also Published As

Publication number Publication date
GB1189355A (en) 1970-04-22
ES340523A1 (es) 1968-07-01
DE1614248A1 (de) 1970-05-27
BE698544A (cg-RX-API-DMAC10.html) 1967-11-16
AT277320B (de) 1969-12-29
CH478461A (de) 1969-09-15
DE1614248C3 (de) 1979-12-06
US3482152A (en) 1969-12-02
DE1614248B2 (de) 1979-04-05

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