NL6605988A - - Google Patents

Info

Publication number
NL6605988A
NL6605988A NL6605988A NL6605988A NL6605988A NL 6605988 A NL6605988 A NL 6605988A NL 6605988 A NL6605988 A NL 6605988A NL 6605988 A NL6605988 A NL 6605988A NL 6605988 A NL6605988 A NL 6605988A
Authority
NL
Netherlands
Application number
NL6605988A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6605988A publication Critical patent/NL6605988A/xx

Links

Classifications

    • H10P95/00
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/08Reaction chambers; Selection of materials therefor
    • H10P14/24
    • H10P14/3411
    • H10P14/3442

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6605988A 1965-06-28 1966-05-03 NL6605988A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES97864A DE1276606B (de) 1965-06-28 1965-06-28 Verfahren zum Herstellen einkristalliner dotierter Schichten aus Halbleitermaterial durch epitaktisches Aufwachsen

Publications (1)

Publication Number Publication Date
NL6605988A true NL6605988A (en:Method) 1966-12-29

Family

ID=7521040

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6605988A NL6605988A (en:Method) 1965-06-28 1966-05-03

Country Status (5)

Country Link
AT (1) AT263085B (en:Method)
CH (1) CH494066A (en:Method)
DE (1) DE1276606B (en:Method)
GB (1) GB1105429A (en:Method)
NL (1) NL6605988A (en:Method)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE883784C (de) * 1949-04-06 1953-06-03 Sueddeutsche App Fabrik G M B Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten

Also Published As

Publication number Publication date
DE1276606B (de) 1968-09-05
GB1105429A (en) 1968-03-06
AT263085B (de) 1968-07-10
CH494066A (de) 1970-07-31

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