NL6601015A - - Google Patents

Info

Publication number
NL6601015A
NL6601015A NL6601015A NL6601015A NL6601015A NL 6601015 A NL6601015 A NL 6601015A NL 6601015 A NL6601015 A NL 6601015A NL 6601015 A NL6601015 A NL 6601015A NL 6601015 A NL6601015 A NL 6601015A
Authority
NL
Netherlands
Application number
NL6601015A
Other versions
NL147789B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6601015A publication Critical patent/NL6601015A/xx
Publication of NL147789B publication Critical patent/NL147789B/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
NL666601015A 1965-01-28 1966-01-26 Werkwijze voor het afzetten van een isolerende laag door verstuiven van materiaal uit een di-elektrische trefplaat, alsmede voorwerp, voorzien van een isolatielaag, verkregen volgens deze werkwijze. NL147789B (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US428733A US3369991A (en) 1965-01-28 1965-01-28 Apparatus for cathode sputtering including a shielded rf electrode
US69285567A 1967-12-22 1967-12-22

Publications (2)

Publication Number Publication Date
NL6601015A true NL6601015A (de) 1966-07-29
NL147789B NL147789B (nl) 1975-11-17

Family

ID=27027888

Family Applications (1)

Application Number Title Priority Date Filing Date
NL666601015A NL147789B (nl) 1965-01-28 1966-01-26 Werkwijze voor het afzetten van een isolerende laag door verstuiven van materiaal uit een di-elektrische trefplaat, alsmede voorwerp, voorzien van een isolatielaag, verkregen volgens deze werkwijze.

Country Status (8)

Country Link
US (2) US3369991A (de)
BE (1) BE674340A (de)
CH (1) CH478254A (de)
DE (1) DE1521321C2 (de)
FR (1) FR1469226A (de)
GB (1) GB1114644A (de)
NL (1) NL147789B (de)
SE (1) SE333088B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528906A (en) * 1967-06-05 1970-09-15 Texas Instruments Inc Rf sputtering method and system
US3630881A (en) * 1970-01-22 1971-12-28 Ibm Cathode-target assembly for rf sputtering apparatus
US3884793A (en) * 1971-09-07 1975-05-20 Telic Corp Electrode type glow discharge apparatus
GB1443827A (en) * 1973-04-27 1976-07-28 Triplex Safety Glass Co Reactive sputtering apparatus and cathode units therefor
US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
US4170662A (en) * 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
DE3206413A1 (de) * 1982-02-23 1983-09-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von aus silizium oder aus siliziden hochschmelzender metalle bestehenden schichten unter verwendung einer planar-magnetron-zerstaeubungsanlage
EP0090067B2 (de) 1982-03-31 1991-03-20 Ibm Deutschland Gmbh Reaktor für das reaktive Ionenätzen und Ätzverfahren
US4569745A (en) * 1982-10-05 1986-02-11 Fujitsu Limited Sputtering apparatus
CH668565A5 (de) * 1986-06-23 1989-01-13 Balzers Hochvakuum Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz.
US4802968A (en) * 1988-01-29 1989-02-07 International Business Machines Corporation RF plasma processing apparatus
US5490910A (en) * 1992-03-09 1996-02-13 Tulip Memory Systems, Inc. Circularly symmetric sputtering apparatus with hollow-cathode plasma devices
US5232569A (en) * 1992-03-09 1993-08-03 Tulip Memory Systems, Inc. Circularly symmetric, large-area, high-deposition-rate sputtering apparatus for the coating of disk substrates
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5646474A (en) * 1995-03-27 1997-07-08 Wayne State University Boron nitride cold cathode
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US10748740B2 (en) * 2018-08-21 2020-08-18 Fei Company X-ray and particle shield for improved vacuum conductivity

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1926336A (en) * 1930-09-13 1933-09-12 Fansteel Prod Co Inc Electrode and method of making same
NL124711C (de) * 1961-10-03
US3325392A (en) * 1961-11-29 1967-06-13 Siemens Ag Method of producing monocrystalline layers of silicon on monocrystalline substrates
US3170810A (en) * 1962-05-24 1965-02-23 Western Electric Co Methods of and apparatus for forming substances on preselected areas of substrates
FR1379512A (fr) * 1963-01-18 1964-11-20 Asea Ab Procédé pour obtenir des couches métalliques ou diélectriques par érosion cathodique
US3347772A (en) * 1964-03-02 1967-10-17 Schjeldahl Co G T Rf sputtering apparatus including a capacitive lead-in for an rf potential

Also Published As

Publication number Publication date
DE1521321C2 (de) 1974-11-21
GB1114644A (en) 1968-05-22
BE674340A (de) 1966-04-15
NL147789B (nl) 1975-11-17
US3532615A (en) 1970-10-06
SE333088B (de) 1971-03-01
DE1521321B1 (de) 1971-06-09
FR1469226A (fr) 1967-02-10
CH478254A (de) 1969-09-15
US3369991A (en) 1968-02-20

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: IBM