CH478254A - Verfahren und Apparat zum Zerstäuben von dielektrischem Material - Google Patents

Verfahren und Apparat zum Zerstäuben von dielektrischem Material

Info

Publication number
CH478254A
CH478254A CH114266A CH114266A CH478254A CH 478254 A CH478254 A CH 478254A CH 114266 A CH114266 A CH 114266A CH 114266 A CH114266 A CH 114266A CH 478254 A CH478254 A CH 478254A
Authority
CH
Switzerland
Prior art keywords
dielectric material
sputtering dielectric
sputtering
dielectric
Prior art date
Application number
CH114266A
Other languages
English (en)
Inventor
Dirk Davidse Pieter
Israel Maissel Leon
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH478254A publication Critical patent/CH478254A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CH114266A 1965-01-28 1966-01-27 Verfahren und Apparat zum Zerstäuben von dielektrischem Material CH478254A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US428733A US3369991A (en) 1965-01-28 1965-01-28 Apparatus for cathode sputtering including a shielded rf electrode
US69285567A 1967-12-22 1967-12-22

Publications (1)

Publication Number Publication Date
CH478254A true CH478254A (de) 1969-09-15

Family

ID=27027888

Family Applications (1)

Application Number Title Priority Date Filing Date
CH114266A CH478254A (de) 1965-01-28 1966-01-27 Verfahren und Apparat zum Zerstäuben von dielektrischem Material

Country Status (8)

Country Link
US (2) US3369991A (de)
BE (1) BE674340A (de)
CH (1) CH478254A (de)
DE (1) DE1521321C2 (de)
FR (1) FR1469226A (de)
GB (1) GB1114644A (de)
NL (1) NL147789B (de)
SE (1) SE333088B (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528906A (en) * 1967-06-05 1970-09-15 Texas Instruments Inc Rf sputtering method and system
US3630881A (en) * 1970-01-22 1971-12-28 Ibm Cathode-target assembly for rf sputtering apparatus
US3884793A (en) * 1971-09-07 1975-05-20 Telic Corp Electrode type glow discharge apparatus
GB1443827A (en) * 1973-04-27 1976-07-28 Triplex Safety Glass Co Reactive sputtering apparatus and cathode units therefor
US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
US4170662A (en) * 1974-11-05 1979-10-09 Eastman Kodak Company Plasma plating
DE3206413A1 (de) * 1982-02-23 1983-09-01 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von aus silizium oder aus siliziden hochschmelzender metalle bestehenden schichten unter verwendung einer planar-magnetron-zerstaeubungsanlage
EP0090067B2 (de) 1982-03-31 1991-03-20 Ibm Deutschland Gmbh Reaktor für das reaktive Ionenätzen und Ätzverfahren
DE3381593D1 (de) * 1982-10-05 1990-06-28 Fujitsu Ltd Zerstaeubungsvorrichtung.
CH668565A5 (de) * 1986-06-23 1989-01-13 Balzers Hochvakuum Verfahren und anordnung zum zerstaeuben eines materials mittels hochfrequenz.
US4802968A (en) * 1988-01-29 1989-02-07 International Business Machines Corporation RF plasma processing apparatus
US5490910A (en) * 1992-03-09 1996-02-13 Tulip Memory Systems, Inc. Circularly symmetric sputtering apparatus with hollow-cathode plasma devices
US5232569A (en) * 1992-03-09 1993-08-03 Tulip Memory Systems, Inc. Circularly symmetric, large-area, high-deposition-rate sputtering apparatus for the coating of disk substrates
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5646474A (en) * 1995-03-27 1997-07-08 Wayne State University Boron nitride cold cathode
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US10748740B2 (en) * 2018-08-21 2020-08-18 Fei Company X-ray and particle shield for improved vacuum conductivity

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1926336A (en) * 1930-09-13 1933-09-12 Fansteel Prod Co Inc Electrode and method of making same
NL124711C (de) * 1961-10-03
US3325392A (en) * 1961-11-29 1967-06-13 Siemens Ag Method of producing monocrystalline layers of silicon on monocrystalline substrates
US3170810A (en) * 1962-05-24 1965-02-23 Western Electric Co Methods of and apparatus for forming substances on preselected areas of substrates
FR1379512A (fr) * 1963-01-18 1964-11-20 Asea Ab Procédé pour obtenir des couches métalliques ou diélectriques par érosion cathodique
US3347772A (en) * 1964-03-02 1967-10-17 Schjeldahl Co G T Rf sputtering apparatus including a capacitive lead-in for an rf potential

Also Published As

Publication number Publication date
GB1114644A (en) 1968-05-22
NL6601015A (de) 1966-07-29
US3369991A (en) 1968-02-20
DE1521321C2 (de) 1974-11-21
DE1521321B1 (de) 1971-06-09
BE674340A (de) 1966-04-15
SE333088B (de) 1971-03-01
US3532615A (en) 1970-10-06
FR1469226A (fr) 1967-02-10
NL147789B (nl) 1975-11-17

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Legal Events

Date Code Title Description
PL Patent ceased