NL6517226A - - Google Patents

Info

Publication number
NL6517226A
NL6517226A NL6517226A NL6517226A NL6517226A NL 6517226 A NL6517226 A NL 6517226A NL 6517226 A NL6517226 A NL 6517226A NL 6517226 A NL6517226 A NL 6517226A NL 6517226 A NL6517226 A NL 6517226A
Authority
NL
Netherlands
Application number
NL6517226A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6517226A publication Critical patent/NL6517226A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/018—Manufacture or treatment of isolation regions comprising dielectric materials using selective deposition of crystalline silicon, e.g. using epitaxial growth of silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/102—Mask alignment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
NL6517226A 1965-01-01 1965-12-31 NL6517226A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB58/65A GB1066911A (en) 1965-01-01 1965-01-01 Semiconductor devices

Publications (1)

Publication Number Publication Date
NL6517226A true NL6517226A (OSRAM) 1966-07-04

Family

ID=9697659

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6517226A NL6517226A (OSRAM) 1965-01-01 1965-12-31

Country Status (4)

Country Link
US (1) US3428499A (OSRAM)
DE (1) DE1514073B2 (OSRAM)
GB (1) GB1066911A (OSRAM)
NL (1) NL6517226A (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1421766A (en) * 1972-03-21 1976-01-21 Ici Ltd Salicylaldoximes and their use in metal extraction processes
GB1520925A (en) * 1975-10-06 1978-08-09 Mullard Ltd Semiconductor device manufacture
US4321747A (en) * 1978-05-30 1982-03-30 Tokyo Shibaura Denki Kabushiki Kaisha Method of manufacturing a solid-state image sensing device
EP0547677A3 (en) * 1991-12-17 1996-10-16 Philips Nv Use of vapor-phase etching in fabrication of semiconductor-on-insulator structure
US5294808A (en) * 1992-10-23 1994-03-15 Cornell Research Foundation, Inc. Pseudomorphic and dislocation free heteroepitaxial structures
RU2102817C1 (ru) * 1993-03-02 1998-01-20 Арендное предприятие "Кремний" Способ изготовления полупроводниковых структур
US6033489A (en) * 1998-05-29 2000-03-07 Fairchild Semiconductor Corp. Semiconductor substrate and method of making same
WO2003098632A2 (en) * 2002-05-16 2003-11-27 Nova Research, Inc. Methods of fabricating magnetoresistive memory devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL268294A (OSRAM) * 1960-10-10
DE1258983B (de) * 1961-12-05 1968-01-18 Telefunken Patent Verfahren zum Herstellen einer Halbleiteranordnung mit epitaktischer Schicht und mindestens einem pn-UEbergang
US3320485A (en) * 1964-03-30 1967-05-16 Trw Inc Dielectric isolation for monolithic circuit
US3312879A (en) * 1964-07-29 1967-04-04 North American Aviation Inc Semiconductor structure including opposite conductivity segments
NL133717C (OSRAM) * 1965-06-28 1900-01-01

Also Published As

Publication number Publication date
DE1514073A1 (de) 1969-06-12
US3428499A (en) 1969-02-18
DE1514073B2 (de) 1971-01-21
GB1066911A (en) 1967-04-26

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