NL6517007A - - Google Patents
Info
- Publication number
- NL6517007A NL6517007A NL6517007A NL6517007A NL6517007A NL 6517007 A NL6517007 A NL 6517007A NL 6517007 A NL6517007 A NL 6517007A NL 6517007 A NL6517007 A NL 6517007A NL 6517007 A NL6517007 A NL 6517007A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/551—Materials of bond wires
- H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
- H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/59—Bond pads specially adapted therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US42269564A | 1964-12-31 | 1964-12-31 | |
| US425542A US3468728A (en) | 1964-12-31 | 1965-01-14 | Method for forming ohmic contact for a semiconductor device |
| US660528A US3390025A (en) | 1964-12-31 | 1967-08-14 | Method of forming small geometry diffused junction semiconductor devices by diffusion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6517007A true NL6517007A (https=) | 1966-07-04 |
Family
ID=27411372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6517007A NL6517007A (https=) | 1964-12-31 | 1965-12-28 |
Country Status (6)
| Country | Link |
|---|---|
| US (4) | US3468728A (https=) |
| DE (1) | DE1514915C2 (https=) |
| FR (1) | FR1462032A (https=) |
| GB (1) | GB1124080A (https=) |
| NL (1) | NL6517007A (https=) |
| SE (1) | SE313120B (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1188879A (en) * | 1967-12-13 | 1970-04-22 | Matsushita Electronics Corp | Planar Transistor |
| US3988214A (en) * | 1968-06-17 | 1976-10-26 | Nippon Electric Company, Ltd. | Method of fabricating a semiconductor device |
| NL6907227A (https=) * | 1969-05-10 | 1970-11-12 | ||
| US3634203A (en) * | 1969-07-22 | 1972-01-11 | Texas Instruments Inc | Thin film metallization processes for microcircuits |
| US3660157A (en) * | 1969-08-18 | 1972-05-02 | Computervision Corp | Enhanced contrast semiconductor wafer alignment target |
| US3766446A (en) * | 1969-11-20 | 1973-10-16 | Kogyo Gijutsuin | Integrated circuits comprising lateral transistors and process for fabrication thereof |
| US3653898A (en) * | 1969-12-16 | 1972-04-04 | Texas Instruments Inc | Formation of small dimensioned apertures |
| US3713911A (en) * | 1970-05-26 | 1973-01-30 | Westinghouse Electric Corp | Method of delineating small areas as in microelectronic component fabrication |
| JPS49100964A (https=) * | 1973-01-31 | 1974-09-24 | ||
| US3919005A (en) * | 1973-05-07 | 1975-11-11 | Fairchild Camera Instr Co | Method for fabricating double-diffused, lateral transistor |
| US3904454A (en) * | 1973-12-26 | 1975-09-09 | Ibm | Method for fabricating minute openings in insulating layers during the formation of integrated circuits |
| US4337475A (en) * | 1979-06-15 | 1982-06-29 | Gold Star Semiconductor, Ltd. | High power transistor with highly doped buried base layer |
| US4243435A (en) * | 1979-06-22 | 1981-01-06 | International Business Machines Corporation | Bipolar transistor fabrication process with an ion implanted emitter |
| FR2460037A1 (fr) * | 1979-06-22 | 1981-01-16 | Thomson Csf | Procede d'auto-alignement de regions differemment dopees d'une structure de semi-conducteur |
| JPS56110229A (en) * | 1980-02-06 | 1981-09-01 | Nec Corp | Manufacture of semiconductor device |
| US4326332A (en) * | 1980-07-28 | 1982-04-27 | International Business Machines Corp. | Method of making a high density V-MOS memory array |
| US4462041A (en) * | 1981-03-20 | 1984-07-24 | Harris Corporation | High speed and current gain insulated gate field effect transistors |
| US4454004A (en) * | 1983-02-28 | 1984-06-12 | Hewlett-Packard Company | Utilizing controlled illumination for creating or removing a conductive layer from a SiO2 insulator over a PN junction bearing semiconductor |
| JP2834797B2 (ja) * | 1989-10-25 | 1998-12-14 | 株式会社リコー | 薄膜形成装置 |
| CN102310602B (zh) * | 2010-06-30 | 2014-03-26 | 鸿富锦精密工业（深圳）有限公司 | 铝塑复合结构及其制作方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL121810C (https=) * | 1955-11-04 | |||
| BE531769A (https=) * | 1957-08-07 | 1900-01-01 | ||
| NL253834A (https=) * | 1959-07-21 | 1900-01-01 | ||
| NL296565A (https=) * | 1962-10-16 | |||
| US3245794A (en) * | 1962-10-29 | 1966-04-12 | Ihilco Corp | Sequential registration scheme |
| US3300339A (en) * | 1962-12-31 | 1967-01-24 | Ibm | Method of covering the surfaces of objects with protective glass jackets and the objects produced thereby |
| US3165430A (en) * | 1963-01-21 | 1965-01-12 | Siliconix Inc | Method of ultra-fine semiconductor manufacture |
| US3246214A (en) * | 1963-04-22 | 1966-04-12 | Siliconix Inc | Horizontally aligned junction transistor structure |
| DE1250790B (de) * | 1963-12-13 | 1967-09-28 | N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) | Verfahren zur Herstellung diffundierter Zonen von Verunreinigungen in einem Halbleiterkörper |
-
0
- US US422695D patent/USB422695I5/en active Pending
- US US311264D patent/USB311264I5/en active Pending
-
1965
- 1965-01-14 US US425542A patent/US3468728A/en not_active Expired - Lifetime
- 1965-12-28 NL NL6517007A patent/NL6517007A/xx unknown
- 1965-12-29 SE SE16946/65A patent/SE313120B/xx unknown
- 1965-12-29 FR FR44105A patent/FR1462032A/fr not_active Expired
- 1965-12-31 DE DE1514915A patent/DE1514915C2/de not_active Expired
- 1965-12-31 GB GB55446/65A patent/GB1124080A/en not_active Expired
-
1967
- 1967-08-14 US US660528A patent/US3390025A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE1514915C2 (de) | 1974-01-03 |
| FR1462032A (fr) | 1966-12-09 |
| US3468728A (en) | 1969-09-23 |
| SE313120B (https=) | 1969-08-04 |
| DE1514915B1 (de) | 1971-03-25 |
| GB1124080A (en) | 1968-08-21 |
| US3390025A (en) | 1968-06-25 |
| USB422695I5 (https=) | 1900-01-01 |
| USB311264I5 (https=) | 1900-01-01 |