NL6516911A - - Google Patents

Info

Publication number
NL6516911A
NL6516911A NL6516911A NL6516911A NL6516911A NL 6516911 A NL6516911 A NL 6516911A NL 6516911 A NL6516911 A NL 6516911A NL 6516911 A NL6516911 A NL 6516911A NL 6516911 A NL6516911 A NL 6516911A
Authority
NL
Netherlands
Application number
NL6516911A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6516911A publication Critical patent/NL6516911A/xx

Links

Classifications

    • H10P95/00
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • H10P32/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/974Substrate surface preparation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6516911A 1965-01-13 1965-12-24 NL6516911A (Direct)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0094987 1965-01-13

Publications (1)

Publication Number Publication Date
NL6516911A true NL6516911A (Direct) 1966-07-14

Family

ID=7519067

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6516911A NL6516911A (Direct) 1965-01-13 1965-12-24

Country Status (8)

Country Link
US (1) US3498853A (Direct)
AT (1) AT259016B (Direct)
CH (1) CH482299A (Direct)
DE (1) DE1544257A1 (Direct)
FR (1) FR1463489A (Direct)
GB (1) GB1115101A (Direct)
NL (1) NL6516911A (Direct)
SE (1) SE334421B (Direct)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764004A1 (de) * 1968-03-20 1971-04-08 Siemens Ag Verfahren zum Herstellen eines Hochfrequenztransistors aus Silicium
DE2408829C2 (de) * 1974-02-23 1984-03-22 Ibm Deutschland Gmbh, 7000 Stuttgart Bor-Ionenquell-Material und Verfahren zu seiner Herstellung
CN104557532B (zh) * 2015-01-13 2017-03-01 西安力邦制药有限公司 二联苯衍生物及其应用
CN114823977B (zh) * 2022-04-25 2024-02-23 中国科学技术大学 氧化镓光电探测器的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon
US3147152A (en) * 1960-01-28 1964-09-01 Western Electric Co Diffusion control in semiconductive bodies
NL260906A (Direct) * 1960-02-12
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor
GB1052379A (Direct) * 1963-03-28 1900-01-01
US3258359A (en) * 1963-04-08 1966-06-28 Siliconix Inc Semiconductor etch and oxidation process
US3255056A (en) * 1963-05-20 1966-06-07 Rca Corp Method of forming semiconductor junction

Also Published As

Publication number Publication date
US3498853A (en) 1970-03-03
AT259016B (de) 1967-12-27
CH482299A (de) 1969-11-30
GB1115101A (en) 1968-05-29
SE334421B (Direct) 1971-04-26
FR1463489A (fr) 1966-12-23
DE1544257A1 (de) 1970-03-26

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