NL6505212A - - Google Patents

Info

Publication number
NL6505212A
NL6505212A NL6505212A NL6505212A NL6505212A NL 6505212 A NL6505212 A NL 6505212A NL 6505212 A NL6505212 A NL 6505212A NL 6505212 A NL6505212 A NL 6505212A NL 6505212 A NL6505212 A NL 6505212A
Authority
NL
Netherlands
Application number
NL6505212A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6505212A publication Critical patent/NL6505212A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/052—Face to face deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/913—Diverse treatments performed in unitary chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
NL6505212A 1964-04-25 1965-04-23 NL6505212A (ref)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2337564 1964-04-25

Publications (1)

Publication Number Publication Date
NL6505212A true NL6505212A (ref) 1965-10-26

Family

ID=12108781

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6505212A NL6505212A (ref) 1964-04-25 1965-04-23

Country Status (4)

Country Link
US (1) US3428500A (ref)
DE (1) DE1544187A1 (ref)
GB (1) GB1102031A (ref)
NL (1) NL6505212A (ref)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636919A (en) * 1969-12-02 1972-01-25 Univ Ohio State Apparatus for growing films
US4089735A (en) * 1968-06-05 1978-05-16 Siemens Aktiengesellschaft Method for epitactic precipitation of crystalline material from a gaseous phase, particularly for semiconductors
DE1769605A1 (de) * 1968-06-14 1971-07-01 Siemens Ag Verfahren zum Herstellen epitaktischer Aufwachsschichten aus Halbleitermaterial fuer elektrische Bauelemente
DE2060839A1 (de) * 1970-12-10 1972-06-29 Siemens Ag Infrarotlampe mit Kolben aus Silicium
FR2217068B1 (ref) * 1973-02-13 1978-10-20 Labo Electronique Physique
US4171996A (en) * 1975-08-12 1979-10-23 Gosudarstvenny Nauchno-Issledovatelsky i Proektny Institut Redkonetallicheskoi Promyshlennosti "Giredmet" Fabrication of a heterogeneous semiconductor structure with composition gradient utilizing a gas phase transfer process
DE2829830C2 (de) * 1978-07-07 1986-06-05 Telefunken electronic GmbH, 7100 Heilbronn Verfahren zur epitaktischen Abscheidung
US4910163A (en) * 1988-06-09 1990-03-20 University Of Connecticut Method for low temperature growth of silicon epitaxial layers using chemical vapor deposition system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL268294A (ref) * 1960-10-10
US3172792A (en) * 1961-07-05 1965-03-09 Epitaxial deposition in a vacuum onto semiconductor wafers through an in- teracttgn between the wafer and the support material
DE1258983B (de) * 1961-12-05 1968-01-18 Telefunken Patent Verfahren zum Herstellen einer Halbleiteranordnung mit epitaktischer Schicht und mindestens einem pn-UEbergang
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
NL296877A (ref) * 1962-08-23
NL296876A (ref) * 1962-08-23
FR1374096A (fr) * 1962-11-15 1964-10-02 Siemens Ag Procédé de fabrication d'un dispositif à semi-conducteur
US3316130A (en) * 1963-05-07 1967-04-25 Gen Electric Epitaxial growth of semiconductor devices
DE1289829B (de) * 1963-05-09 1969-02-27 Siemens Ag Verfahren zum Herstellen einer einkristallinen Halbleiterschicht durch Abscheidung aus einem Reaktionsgas
USB389017I5 (ref) * 1964-08-12

Also Published As

Publication number Publication date
GB1102031A (en) 1968-02-07
DE1544187A1 (de) 1971-03-04
US3428500A (en) 1969-02-18

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