NL6502611A - - Google Patents
Info
- Publication number
- NL6502611A NL6502611A NL6502611A NL6502611A NL6502611A NL 6502611 A NL6502611 A NL 6502611A NL 6502611 A NL6502611 A NL 6502611A NL 6502611 A NL6502611 A NL 6502611A NL 6502611 A NL6502611 A NL 6502611A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US349090A US3304469A (en) | 1964-03-03 | 1964-03-03 | Field effect solid state device having a partially insulated electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6502611A true NL6502611A (xx) | 1965-09-06 |
Family
ID=23370864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6502611A NL6502611A (xx) | 1964-03-03 | 1965-03-02 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3304469A (xx) |
| DE (1) | DE1514339B1 (xx) |
| ES (1) | ES310007A1 (xx) |
| FR (1) | FR1425906A (xx) |
| GB (1) | GB1099381A (xx) |
| NL (1) | NL6502611A (xx) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3523188A (en) * | 1965-12-20 | 1970-08-04 | Xerox Corp | Semiconductor current control device and method |
| US3700976A (en) * | 1970-11-02 | 1972-10-24 | Hughes Aircraft Co | Insulated gate field effect transistor adapted for microwave applications |
| DE2321797C3 (de) * | 1973-04-30 | 1981-12-17 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Sperrschicht-Feldeffekttransistor |
| US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
| US4040073A (en) * | 1975-08-29 | 1977-08-02 | Westinghouse Electric Corporation | Thin film transistor and display panel using the transistor |
| US4127860A (en) * | 1977-04-18 | 1978-11-28 | Rca Corporation | Integrated circuit mesa bipolar device on insulating substrate incorporating Schottky barrier contact |
| US4169746A (en) * | 1977-04-28 | 1979-10-02 | Rca Corp. | Method for making silicon on sapphire transistor utilizing predeposition of leads |
| FR2484141A1 (fr) * | 1980-06-06 | 1981-12-11 | Thomson Csf | Element bipolaire a conduction non lineaire, et dispositif a commutation, de visualisation notamment, incorporant un tel element |
| EP0055032B1 (en) * | 1980-12-23 | 1986-04-23 | National Research Development Corporation | Field effect transistors |
| GB2122419B (en) * | 1982-04-30 | 1986-10-22 | Suwa Seikosha Kk | A thin film transistor and an active matrix liquid crystal display device |
| GB2140203B (en) * | 1983-03-15 | 1987-01-14 | Canon Kk | Thin film transistor with wiring layer continuous with the source and drain |
| US4547789A (en) * | 1983-11-08 | 1985-10-15 | Energy Conversion Devices, Inc. | High current thin film transistor |
| US5242844A (en) * | 1983-12-23 | 1993-09-07 | Sony Corporation | Semiconductor device with polycrystalline silicon active region and method of fabrication thereof |
| US5172203A (en) * | 1983-12-23 | 1992-12-15 | Sony Corporation | Semiconductor device with polycrystalline silicon active region and method of fabrication thereof |
| US5162892A (en) * | 1983-12-24 | 1992-11-10 | Sony Corporation | Semiconductor device with polycrystalline silicon active region and hydrogenated passivation layer |
| US4668968A (en) * | 1984-05-14 | 1987-05-26 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
| US4673957A (en) * | 1984-05-14 | 1987-06-16 | Energy Conversion Devices, Inc. | Integrated circuit compatible thin film field effect transistor and method of making same |
| US4670763A (en) * | 1984-05-14 | 1987-06-02 | Energy Conversion Devices, Inc. | Thin film field effect transistor |
| US4769338A (en) * | 1984-05-14 | 1988-09-06 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
| US4727044A (en) | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| JPH0215652A (ja) * | 1988-07-01 | 1990-01-19 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| TW215967B (en) * | 1992-01-17 | 1993-11-11 | Seiko Electron Co Ltd | MOS Poly-Si thin film transistor with a flattened channel interface and method of producing same |
| EP2380202B1 (en) | 2008-12-24 | 2016-02-17 | 3M Innovative Properties Company | Stability enhancements in metal oxide semiconductor thin film transistors |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE968911C (de) * | 1949-06-14 | 1958-04-10 | Licentia Gmbh | Elektrisch steuerbarer Trockengleichrichter und Verfahren zu seiner Herstellung |
| FR1037293A (fr) * | 1951-05-19 | 1953-09-15 | Licentia Gmbh | Redresseur sec à contrôle électrique et son procédé de fabrication |
| US2900531A (en) * | 1957-02-28 | 1959-08-18 | Rca Corp | Field-effect transistor |
| BE572049A (xx) * | 1957-12-03 | 1900-01-01 | ||
| FR1191404A (fr) * | 1958-02-10 | 1959-10-20 | Ct D Etudes Et De Dev De L Ele | Procédé de réalisation de diodes et produits industriels en résultant |
| US3097308A (en) * | 1959-03-09 | 1963-07-09 | Rca Corp | Semiconductor device with surface electrode producing electrostatic field and circuits therefor |
| NL123574C (xx) * | 1959-05-27 | |||
| NL257516A (xx) * | 1959-11-25 | |||
| US3094650A (en) * | 1960-04-22 | 1963-06-18 | Servomechanisms Inc | Method of making multiple layer condensers by vapor deposition and product thereof |
| US3237061A (en) * | 1961-07-26 | 1966-02-22 | Columbia Broadcasting Syst Inc | Semiconductor device having exposed semiconductor surface and method of manufacture |
| US3254276A (en) * | 1961-11-29 | 1966-05-31 | Philco Corp | Solid-state translating device with barrier-layers formed by thin metal and semiconductor material |
| IT699934A (xx) * | 1962-06-29 | |||
| US3184659A (en) * | 1962-08-13 | 1965-05-18 | Gen Telephone & Elect | Tunnel cathode having a metal grid structure |
-
1964
- 1964-03-03 US US349090A patent/US3304469A/en not_active Expired - Lifetime
-
1965
- 1965-02-17 GB GB6946/65A patent/GB1099381A/en not_active Expired
- 1965-03-01 DE DE1965R0040011 patent/DE1514339B1/de active Pending
- 1965-03-02 NL NL6502611A patent/NL6502611A/xx unknown
- 1965-03-02 ES ES0310007A patent/ES310007A1/es not_active Expired
- 1965-03-03 FR FR7745A patent/FR1425906A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3304469A (en) | 1967-02-14 |
| DE1514339B1 (de) | 1970-03-26 |
| FR1425906A (fr) | 1966-01-24 |
| GB1099381A (en) | 1968-01-17 |
| ES310007A1 (es) | 1965-06-01 |