NL6501309A - - Google Patents

Info

Publication number
NL6501309A
NL6501309A NL6501309A NL6501309A NL6501309A NL 6501309 A NL6501309 A NL 6501309A NL 6501309 A NL6501309 A NL 6501309A NL 6501309 A NL6501309 A NL 6501309A NL 6501309 A NL6501309 A NL 6501309A
Authority
NL
Netherlands
Application number
NL6501309A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6501309A publication Critical patent/NL6501309A/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02Sample-and-hold arrangements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/04Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70Resistive array aspects
    • G11C2213/72Array wherein the access device being a diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
NL6501309A 1964-02-05 1965-02-02 NL6501309A (cs)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED43535A DE1212155B (de) 1964-02-05 1964-02-05 Elektrischer Speicher

Publications (1)

Publication Number Publication Date
NL6501309A true NL6501309A (cs) 1965-08-06

Family

ID=7047660

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6501309A NL6501309A (cs) 1964-02-05 1965-02-02

Country Status (7)

Country Link
US (1) US3445823A (cs)
BE (1) BE658951A (cs)
DE (1) DE1212155B (cs)
FR (1) FR1423253A (cs)
GB (1) GB1085572A (cs)
NL (1) NL6501309A (cs)
SE (1) SE312356B (cs)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3571809A (en) * 1968-11-04 1971-03-23 Energy Conversion Devices Inc Memory matrix having serially connected threshold and memory switch devices at each cross-over point
US3573757A (en) * 1968-11-04 1971-04-06 Energy Conversion Devices Inc Memory matrix having serially connected threshold and memory switch devices at each cross-over point
US3530441A (en) * 1969-01-15 1970-09-22 Energy Conversion Devices Inc Method and apparatus for storing and retrieving information
GB1308711A (en) * 1969-03-13 1973-03-07 Energy Conversion Devices Inc Combination switch units and integrated circuits
US3576549A (en) * 1969-04-14 1971-04-27 Cogar Corp Semiconductor device, method, and memory array
US3827073A (en) * 1969-05-01 1974-07-30 Texas Instruments Inc Gated bilateral switching semiconductor device
US3631410A (en) * 1969-11-03 1971-12-28 Gen Motors Corp Event recorder
US3614753A (en) * 1969-11-10 1971-10-19 Shell Oil Co Single-rail solid-state memory with capacitive storage
US3735367A (en) * 1970-04-29 1973-05-22 Currier Smith Corp Electronic resistance memory
US3713111A (en) * 1970-12-14 1973-01-23 Rca Corp Operation of memory array employing variable threshold transistors
US3740620A (en) * 1971-06-22 1973-06-19 Ibm Storage system having heterojunction-homojunction devices
DE3036869C2 (de) * 1979-10-01 1985-09-05 Hitachi, Ltd., Tokio/Tokyo Integrierte Halbleiterschaltung und Schaltkreisaktivierverfahren
US4458297A (en) * 1981-01-16 1984-07-03 Mosaic Systems, Inc. Universal interconnection substrate
US4467400A (en) * 1981-01-16 1984-08-21 Burroughs Corporation Wafer scale integrated circuit
US4630355A (en) * 1985-03-08 1986-12-23 Energy Conversion Devices, Inc. Electric circuits having repairable circuit lines and method of making the same
US6545907B1 (en) * 2001-10-30 2003-04-08 Ovonyx, Inc. Technique and apparatus for performing write operations to a phase change material memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2784389A (en) * 1954-12-31 1957-03-05 Ibm Information storage unit
US2938194A (en) * 1955-07-25 1960-05-24 Bell Telephone Labor Inc Ferroelectric storage circuits

Also Published As

Publication number Publication date
DE1212155B (de) 1966-03-10
FR1423253A (fr) 1966-01-03
US3445823A (en) 1969-05-20
BE658951A (cs) 1965-05-17
GB1085572A (en) 1967-10-04
SE312356B (cs) 1969-07-14

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