NL6407230A - - Google Patents

Info

Publication number
NL6407230A
NL6407230A NL6407230A NL6407230A NL6407230A NL 6407230 A NL6407230 A NL 6407230A NL 6407230 A NL6407230 A NL 6407230A NL 6407230 A NL6407230 A NL 6407230A NL 6407230 A NL6407230 A NL 6407230A
Authority
NL
Netherlands
Application number
NL6407230A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6407230A publication Critical patent/NL6407230A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Catalysts (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL6407230A 1963-09-28 1964-06-25 NL6407230A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0087592 1963-09-28

Publications (1)

Publication Number Publication Date
NL6407230A true NL6407230A (xx) 1965-03-29

Family

ID=7513882

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6407230A NL6407230A (xx) 1963-09-28 1964-06-25

Country Status (3)

Country Link
US (1) US3314833A (xx)
GB (1) GB1068189A (xx)
NL (1) NL6407230A (xx)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915903B1 (xx) * 1969-08-18 1974-04-18
US3841927A (en) * 1972-11-10 1974-10-15 Owens Illinois Inc Aluminum metaphosphate source body for doping silicon
US4129090A (en) * 1973-02-28 1978-12-12 Hitachi, Ltd. Apparatus for diffusion into semiconductor wafers
JPS6011457B2 (ja) * 1973-04-02 1985-03-26 株式会社日立製作所 デイポジシヨン法
US3998668A (en) * 1973-12-21 1976-12-21 Owens-Illinois, Inc. Aluminum metaphosphate dopant sources
US3962000A (en) * 1974-01-07 1976-06-08 Owens-Illinois, Inc. Barium aluminoborosilicate glass-ceramics for semiconductor doping
US3954525A (en) * 1974-08-26 1976-05-04 The Carborundum Company Hot-pressed solid diffusion sources for phosphorus
US4233093A (en) * 1979-04-12 1980-11-11 Pel Chow Process for the manufacture of PNP transistors high power
US4239560A (en) * 1979-05-21 1980-12-16 General Electric Company Open tube aluminum oxide disc diffusion
JPS5824006B2 (ja) * 1980-01-30 1983-05-18 株式会社日立製作所 不純物拡散法
EP0061787B1 (de) * 1981-03-02 1985-11-21 BBC Aktiengesellschaft Brown, Boveri & Cie. Verfahren zum Dotieren von Trägern aus Silicium für die Halbleiterfertigung
DE102006035630B4 (de) * 2006-07-31 2012-12-06 Infineon Technologies Austria Ag Verfahren zum Herstellen eines Halbleiterbauelements

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2021903A (en) * 1933-09-27 1935-11-26 Joseph F Tapie Mercury condenser
US2729190A (en) * 1951-10-08 1956-01-03 Pawlyk Peter Apparatus for plating the interior of hollow objects
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
NL193073A (xx) * 1954-03-05
NL210216A (xx) * 1955-12-02
US2827403A (en) * 1956-08-06 1958-03-18 Pacific Semiconductors Inc Method for diffusing active impurities into semiconductor materials
GB909869A (xx) * 1958-06-09 1900-01-01
NL130054C (xx) * 1960-02-12
US3184348A (en) * 1960-12-30 1965-05-18 Ibm Method for controlling doping in vaporgrown semiconductor bodies
US3198502A (en) * 1961-01-10 1965-08-03 Thompson Donald Amalgam mixer and separator
NL283915A (xx) * 1961-10-04
US3178798A (en) * 1962-05-09 1965-04-20 Ibm Vapor deposition process wherein the vapor contains both donor and acceptor impurities

Also Published As

Publication number Publication date
US3314833A (en) 1967-04-18
GB1068189A (en) 1967-05-10

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