NL34153C - - Google Patents

Info

Publication number
NL34153C
NL34153C NL50649A NL50649A NL34153C NL 34153 C NL34153 C NL 34153C NL 50649 A NL50649 A NL 50649A NL 50649 A NL50649 A NL 50649A NL 34153 C NL34153 C NL 34153C
Authority
NL
Netherlands
Application number
NL50649A
Other languages
Dutch (nl)
Inventor
Willem Christiaan Van Geel
Jan Hendrik De Boer
Hendrik Emmens
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL50649A priority Critical patent/NL34153C/nl
Priority to DK45412D priority patent/DK45412C/da
Priority to US510580A priority patent/US1985118A/en
Priority to BE377298A priority patent/BE377298A/fr
Priority to GB4584/31A priority patent/GB361738A/en
Priority to CH155911D priority patent/CH155911A/de
Priority to DEN31575A priority patent/DE631649C/de
Priority to AT128220D priority patent/AT128220B/de
Priority to FR712098D priority patent/FR712098A/fr
Application granted granted Critical
Publication of NL34153C publication Critical patent/NL34153C/nl

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B42/00—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means
    • G03B42/02—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means using X-rays
    • G03B42/025—Positioning or masking the X-ray film cartridge in the radiographic apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
NL50649A 1930-03-08 1930-03-08 NL34153C (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
NL50649A NL34153C (de) 1930-03-08 1930-03-08
DK45412D DK45412C (da) 1930-03-08 1931-01-13 Tørensretter.
US510580A US1985118A (en) 1930-03-08 1931-01-22 Dry rectifier
BE377298A BE377298A (de) 1930-03-08 1931-02-12
GB4584/31A GB361738A (en) 1930-03-08 1931-02-13 Improvements in or relating to dry electric rectifiers
CH155911D CH155911A (de) 1930-03-08 1931-02-13 Trockengleichrichter.
DEN31575A DE631649C (de) 1930-03-08 1931-02-14 Trockengleichrichter
AT128220D AT128220B (de) 1930-03-08 1931-02-14 Trockengleichrichter.
FR712098D FR712098A (fr) 1930-03-08 1931-02-25 Redresseur de courant sec.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL50649A NL34153C (de) 1930-03-08 1930-03-08

Publications (1)

Publication Number Publication Date
NL34153C true NL34153C (de) 1934-10-23

Family

ID=47996

Family Applications (1)

Application Number Title Priority Date Filing Date
NL50649A NL34153C (de) 1930-03-08 1930-03-08

Country Status (9)

Country Link
US (1) US1985118A (de)
AT (1) AT128220B (de)
BE (1) BE377298A (de)
CH (1) CH155911A (de)
DE (1) DE631649C (de)
DK (1) DK45412C (de)
FR (1) FR712098A (de)
GB (1) GB361738A (de)
NL (1) NL34153C (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB702620A (en) * 1951-10-26 1954-01-20 Standard Telephones Cables Ltd Improvements in or relating to dry contact rectifiers
US2749489A (en) * 1950-12-04 1956-06-05 Int Standard Electric Corp Dry contact rectifiers
US2749596A (en) * 1952-01-04 1956-06-12 Robert G Breckenridge Method of making titanium dioxide rectifiers
US2766508A (en) * 1952-05-22 1956-10-16 Gen Electric Blocking layer for titanium oxide rectifier
US2784639A (en) * 1953-05-04 1957-03-12 Eastman Kodak Co Titanium nitride coated optical element
US2874102A (en) * 1953-08-12 1959-02-17 Rca Corp Electrodes and methods of making same
US2822606A (en) * 1955-10-09 1958-02-11 Yoshida Koji Titanium oxide rectifier and method for manufacturing same
GB829170A (en) * 1957-06-03 1960-02-24 Sperry Rand Corp Method of bonding an element of semiconducting material to an electrode
US3198718A (en) * 1960-05-26 1965-08-03 Lockheed Aircraft Corp Method for making structurally integrated film resistor assembly
US3199999A (en) * 1961-03-23 1965-08-10 Hi Shear Corp Pigment of titanium having titanium oxide coating; electrolytic method of making pigment; and reflector and paint containing same
US3180807A (en) * 1961-10-23 1965-04-27 Lockheed Aircraft Corp Method for making film resistors

Also Published As

Publication number Publication date
FR712098A (fr) 1931-09-24
BE377298A (de) 1931-03-30
AT128220B (de) 1932-05-10
US1985118A (en) 1934-12-18
DE631649C (de) 1936-06-25
DK45412C (da) 1932-03-21
CH155911A (de) 1932-07-15
GB361738A (en) 1931-11-26

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