NL297836A - - Google Patents
Info
- Publication number
- NL297836A NL297836A NL297836DA NL297836A NL 297836 A NL297836 A NL 297836A NL 297836D A NL297836D A NL 297836DA NL 297836 A NL297836 A NL 297836A
- Authority
- NL
- Netherlands
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/383—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/388—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/973—Substrate orientation
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1962S0081455 DE1194504C2 (de) | 1962-09-14 | 1962-09-14 | Verfahren zur Herstellung von Halbleiter-anordnungen |
Publications (1)
Publication Number | Publication Date |
---|---|
NL297836A true NL297836A (fr) |
Family
ID=7509624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL297836D NL297836A (fr) | 1962-09-14 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3386893A (fr) |
CH (1) | CH412117A (fr) |
DE (1) | DE1194504C2 (fr) |
FR (1) | FR1369631A (fr) |
GB (1) | GB1001693A (fr) |
NL (1) | NL297836A (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3612960A (en) * | 1968-10-15 | 1971-10-12 | Tokyo Shibaura Electric Co | Semiconductor device |
US3753804A (en) * | 1971-08-31 | 1973-08-21 | Philips Corp | Method of manufacturing a semiconductor device |
EP0080844A1 (fr) * | 1981-11-25 | 1983-06-08 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Préparation de produits d'addition utilisables dans la fabrication de matériaux à base de composés semi-conducteurs |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2980594A (en) * | 1954-06-01 | 1961-04-18 | Rca Corp | Methods of making semi-conductor devices |
US2825667A (en) * | 1955-05-10 | 1958-03-04 | Rca Corp | Methods of making surface alloyed semiconductor devices |
US2814589A (en) * | 1955-08-02 | 1957-11-26 | Bell Telephone Labor Inc | Method of plating silicon |
GB861679A (en) * | 1956-02-24 | 1961-02-22 | Post Office | Improvements in or relating to methods for the treatment of semi-conducting materialand semi-conductor junction devices |
US2873232A (en) * | 1956-06-18 | 1959-02-10 | Philco Corp | Method of jet plating |
BE562375A (fr) * | 1957-01-02 | |||
US2971869A (en) * | 1957-08-27 | 1961-02-14 | Motorola Inc | Semiconductor assembly and method of forming same |
NL247276A (fr) * | 1959-01-12 | |||
NL247746A (fr) * | 1959-01-27 | |||
US2978661A (en) * | 1959-03-03 | 1961-04-04 | Battelle Memorial Institute | Semiconductor devices |
US3106764A (en) * | 1959-04-20 | 1963-10-15 | Westinghouse Electric Corp | Continuous process for producing semiconductor devices |
US3075892A (en) * | 1959-09-15 | 1963-01-29 | Westinghouse Electric Corp | Process for making semiconductor devices |
NL267219A (fr) * | 1960-07-21 | |||
NL279119A (fr) * | 1961-06-01 | |||
US3152023A (en) * | 1961-10-25 | 1964-10-06 | Cutler Hammer Inc | Method of making semiconductor devices |
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0
- NL NL297836D patent/NL297836A/xx unknown
-
1962
- 1962-09-14 DE DE1962S0081455 patent/DE1194504C2/de not_active Expired
-
1963
- 1963-08-23 CH CH1042863A patent/CH412117A/de unknown
- 1963-09-10 FR FR947070A patent/FR1369631A/fr not_active Expired
- 1963-09-12 GB GB36059/63A patent/GB1001693A/en not_active Expired
- 1963-09-13 US US313139A patent/US3386893A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE1194504B (de) | 1965-06-10 |
CH412117A (de) | 1966-04-30 |
GB1001693A (en) | 1965-08-18 |
US3386893A (en) | 1968-06-04 |
FR1369631A (fr) | 1964-08-14 |
DE1194504C2 (de) | 1966-03-03 |