NL296170A - - Google Patents

Info

Publication number
NL296170A
NL296170A NL296170DA NL296170A NL 296170 A NL296170 A NL 296170A NL 296170D A NL296170D A NL 296170DA NL 296170 A NL296170 A NL 296170A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL296170A publication Critical patent/NL296170A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
NL296170D 1962-10-04 NL296170A (en))

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ22459A DE1264615B (de) 1962-10-04 1962-10-04 Emitteranschluss eines Leistungstransistors

Publications (1)

Publication Number Publication Date
NL296170A true NL296170A (en))

Family

ID=7200967

Family Applications (1)

Application Number Title Priority Date Filing Date
NL296170D NL296170A (en)) 1962-10-04

Country Status (4)

Country Link
DE (1) DE1264615B (en))
FR (1) FR1358189A (en))
GB (1) GB1044469A (en))
NL (1) NL296170A (en))

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504239A (en) * 1964-01-31 1970-03-31 Rca Corp Transistor with distributed resistor between emitter lead and emitter region
US3368123A (en) * 1965-02-04 1968-02-06 Gen Motors Corp Semiconductor device having uniform current density on emitter periphery
US3506886A (en) * 1965-03-08 1970-04-14 Itt High power transistor assembly
DE1514266C3 (de) * 1965-08-12 1984-05-03 N.V. Philips' Gloeilampenfabrieken, Eindhoven Halbleiterbauelement und Schaltung dafür
JPS5025306B1 (en)) * 1968-04-04 1975-08-22
NL164703C (nl) * 1968-06-21 1981-01-15 Philips Nv Halfgeleiderinrichting, voorzien van een contact met ten minste twee gedeelten en een voor deze gedeelten gemeenschappelijk gedeelte, waarbij in elk der ver- bindingswegen tussen de gedeelten en het gemeenschappe- lijke gedeelte een serieweerstand is opgenomen.
NL6813997A (en)) * 1968-09-30 1970-04-01
NL7002117A (en)) * 1970-02-14 1971-08-17
NL165888C (nl) * 1970-10-10 1981-05-15 Philips Nv Halfgeleiderinrichting met een halfgeleiderlichaam bevattende een collectorzone, een basiszone en een emitterzone waarbij de emitterzone ten minste twee strookvormige onderling evenwijdige emittergebieden bevat, die uit afwisselend smallere en bredere delen bestaan.
JPS5641186B2 (en)) * 1972-03-03 1981-09-26
DE2251727A1 (de) * 1972-10-21 1974-04-25 Licentia Gmbh Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps
JPS57117276A (en) * 1981-01-14 1982-07-21 Hitachi Ltd Semiconductor device
DE3346518C1 (de) * 1983-12-22 1989-01-12 Texas Instruments Deutschland Gmbh, 8050 Freising Feldeffekttransistor mit isolierter Gate-Elektrode
JPS62229975A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 電力用トランジスタ
JP3942984B2 (ja) * 2002-08-06 2007-07-11 株式会社ナノテコ バイポーラトランジスタ、マルチフィンガーバイポーラトランジスタ、バイポーラトランジスタ製造用エピタキシャル基板、及びバイポーラトランジスタの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1786107U (de) * 1956-09-25 1959-04-02 Siemens Ag Leistungstransistor.
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit

Also Published As

Publication number Publication date
GB1044469A (en) 1966-09-28
DE1264615B (de) 1968-03-28
FR1358189A (fr) 1964-04-10

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