NL295293A - - Google Patents

Info

Publication number
NL295293A
NL295293A NL295293DA NL295293A NL 295293 A NL295293 A NL 295293A NL 295293D A NL295293D A NL 295293DA NL 295293 A NL295293 A NL 295293A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL295293A publication Critical patent/NL295293A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/057—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL295293D 1962-07-13 NL295293A (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US209776A US3146137A (en) 1962-07-13 1962-07-13 Smooth epitaxial compound films having a uniform thickness by vapor depositing on the (100) crystallographic plane of the substrate

Publications (1)

Publication Number Publication Date
NL295293A true NL295293A (no)

Family

ID=22780224

Family Applications (1)

Application Number Title Priority Date Filing Date
NL295293D NL295293A (no) 1962-07-13

Country Status (4)

Country Link
US (1) US3146137A (no)
DE (1) DE1444514B2 (no)
GB (1) GB1038946A (no)
NL (1) NL295293A (no)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1060474A (en) * 1963-03-27 1967-03-01 Siemens Ag The production of monocrystalline semiconductor bodies of silicon or germanium
GB1094831A (en) * 1965-07-21 1967-12-13 Standard Telephones Cables Ltd Semiconductor junction devices
FR1489613A (no) * 1965-08-19 1967-11-13
US3421952A (en) * 1966-02-02 1969-01-14 Texas Instruments Inc Method of making high resistivity group iii-v compounds and alloys doped with iron from an iron-arsenide source
US4404265A (en) * 1969-10-01 1983-09-13 Rockwell International Corporation Epitaxial composite and method of making
US4368098A (en) * 1969-10-01 1983-01-11 Rockwell International Corporation Epitaxial composite and method of making
NL7100218A (no) * 1970-01-09 1971-07-13
JPS5027480B1 (no) * 1971-07-28 1975-09-08
US4284467A (en) * 1972-02-14 1981-08-18 Hewlett-Packard Company Method for making semiconductor material
US3888705A (en) * 1973-12-19 1975-06-10 Nasa Vapor phase growth of groups iii-v compounds by hydrogen chloride transport of the elements
US4050964A (en) * 1975-12-01 1977-09-27 Bell Telephone Laboratories, Incorporated Growing smooth epitaxial layers on misoriented substrates
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
US4147571A (en) * 1977-07-11 1979-04-03 Hewlett-Packard Company Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
US4407694A (en) * 1981-06-22 1983-10-04 Hughes Aircraft Company Multi-range doping of epitaxial III-V layers from a single source
US4908074A (en) * 1986-02-28 1990-03-13 Kyocera Corporation Gallium arsenide on sapphire heterostructure
EP0323249B1 (en) * 1987-12-29 1993-11-03 Nec Corporation Semiconductor crystal structure and a process for producing the same
US4935383A (en) * 1988-09-23 1990-06-19 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition
NL9000973A (nl) * 1990-04-24 1991-11-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US5169485A (en) * 1991-03-07 1992-12-08 Bell Communications Research, Inc. Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element
US5532511A (en) * 1992-10-23 1996-07-02 Research Development Corp. Of Japan Semiconductor device comprising a highspeed static induction transistor
US7851916B2 (en) * 2005-03-17 2010-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. Strain silicon wafer with a crystal orientation (100) in flip chip BGA package
JP2007150097A (ja) * 2005-11-29 2007-06-14 Toshiba Corp 半導体素子およびその製造方法
US8382898B2 (en) 2006-11-22 2013-02-26 Soitec Methods for high volume manufacture of group III-V semiconductor materials
WO2008064083A2 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies Gallium trichloride injection scheme
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
US9481943B2 (en) 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
ATE546570T1 (de) 2006-11-22 2012-03-15 Soitec Silicon On Insulator Verfahren zur epitaktischen abscheidung von einkristallinen iii-v halbleitermaterial
KR101390425B1 (ko) 2006-11-22 2014-05-19 소이텍 화학기상증착 챔버용 온도제어 퍼지 게이트 밸브
US9580836B2 (en) * 2006-11-22 2017-02-28 Soitec Equipment for high volume manufacture of group III-V semiconductor materials
WO2008064080A1 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies High volume delivery system for gallium trichloride
US8486192B2 (en) 2010-09-30 2013-07-16 Soitec Thermalizing gas injectors for generating increased precursor gas, material deposition systems including such injectors, and related methods
US8133806B1 (en) 2010-09-30 2012-03-13 S.O.I.Tec Silicon On Insulator Technologies Systems and methods for forming semiconductor materials by atomic layer deposition
US9721810B2 (en) 2010-10-28 2017-08-01 University Of Utah Research Foundation Methods for enhancing P-type doping in III-V semiconductor films
US9557378B2 (en) * 2012-07-20 2017-01-31 Globalfoundries Inc. Method and structure for multi-core chip product test and selective voltage binning disposition

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (no) * 1951-03-07 1900-01-01
US2858275A (en) * 1954-12-23 1958-10-28 Siemens Ag Mixed-crystal semiconductor devices
DE1029941B (de) * 1955-07-13 1958-05-14 Siemens Ag Verfahren zur Herstellung von einkristallinen Halbleiterschichten

Also Published As

Publication number Publication date
GB1038946A (en) 1966-08-17
DE1444514B2 (de) 1971-03-11
US3146137A (en) 1964-08-25
DE1444514A1 (de) 1970-02-19

Similar Documents

Publication Publication Date Title
BE616548R (no)
BE612311A (no)
BE380301A (no)
BE489310A (no)
BE538252A (no)
BE538831A (no)
BE541929A (no)
BE553896A (no)
BE559145A (no)
BE586180A (no)
BE592434A (no)
BE599783A (no)
BE604335A (no)
BE608197A (no)
BE609543A (no)
BE612190A (no)
BE616490A (no)
BE612464A (no)
BE612847A (no)
BE612926A (no)
BE613108A (no)
BE613190A (no)
BE613298A (no)
BE613319A (no)
BE613335A (no)