NL285435A - - Google Patents
Info
- Publication number
- NL285435A NL285435A NL285435DA NL285435A NL 285435 A NL285435 A NL 285435A NL 285435D A NL285435D A NL 285435DA NL 285435 A NL285435 A NL 285435A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H10P14/3421—
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
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- H10P14/24—
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- H10P95/00—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/901—Levitation, reduced gravity, microgravity, space
- Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES76815A DE1257119B (de) | 1961-11-24 | 1961-11-24 | Verfahren zum Herstellen epitaktischer Schichten auf {111}-Flaechen dendritischer Halbleiterkristalle |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL285435A true NL285435A (OSRAM) | 1900-01-01 |
Family
ID=7506382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL285435D NL285435A (OSRAM) | 1961-11-24 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3344002A (OSRAM) |
| CH (1) | CH442248A (OSRAM) |
| DE (1) | DE1257119B (OSRAM) |
| GB (1) | GB1027159A (OSRAM) |
| NL (1) | NL285435A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3473974A (en) * | 1967-02-14 | 1969-10-21 | Westinghouse Electric Corp | Utilization of trace impurities in the vapor growth of crystals |
| US3900363A (en) * | 1972-11-15 | 1975-08-19 | Nippon Columbia | Method of making crystal |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL99536C (OSRAM) * | 1951-03-07 | 1900-01-01 | ||
| NL113205C (OSRAM) * | 1958-08-28 | 1900-01-01 | ||
| US3025192A (en) * | 1959-01-02 | 1962-03-13 | Norton Co | Silicon carbide crystals and processes and furnaces for making them |
| US3206406A (en) * | 1960-05-09 | 1965-09-14 | Merck & Co Inc | Critical cooling rate in vapor deposition process to form bladelike semiconductor compound crystals |
| DE1254607B (de) * | 1960-12-08 | 1967-11-23 | Siemens Ag | Verfahren zum Herstellen von einkristallinen Halbleiterkoerpoern aus der Gasphase |
| US3152022A (en) * | 1962-05-25 | 1964-10-06 | Bell Telephone Labor Inc | Epitaxial deposition on the surface of a freshly grown dendrite |
-
0
- NL NL285435D patent/NL285435A/xx unknown
-
1961
- 1961-11-24 DE DES76815A patent/DE1257119B/de active Pending
-
1962
- 1962-10-02 CH CH1159662A patent/CH442248A/de unknown
- 1962-11-21 US US239200A patent/US3344002A/en not_active Expired - Lifetime
- 1962-11-22 GB GB44157/62A patent/GB1027159A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CH442248A (de) | 1967-08-31 |
| US3344002A (en) | 1967-09-26 |
| DE1257119B (de) | 1967-12-28 |
| GB1027159A (en) | 1966-04-27 |