NL284599A - - Google Patents
Info
- Publication number
- NL284599A NL284599A NL284599DA NL284599A NL 284599 A NL284599 A NL 284599A NL 284599D A NL284599D A NL 284599DA NL 284599 A NL284599 A NL 284599A
- Authority
- NL
- Netherlands
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H10P14/22—
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- H10P14/2921—
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- H10P14/2922—
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- H10P14/3241—
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- H10P14/3411—
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- H10P14/3802—
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- H10P14/3818—
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- H10P95/00—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEST17870A DE1173994B (de) | 1961-05-26 | 1961-05-26 | Verfahren zur Herstellung von elektrischen Halbleiteranordnungen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL284599A true NL284599A (en:Method) | 1900-01-01 |
Family
ID=37438034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL284599D NL284599A (en:Method) | 1961-05-26 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3271632A (en:Method) |
| BE (1) | BE618081A (en:Method) |
| CH (1) | CH398804A (en:Method) |
| DE (1) | DE1173994B (en:Method) |
| GB (1) | GB998386A (en:Method) |
| NL (1) | NL284599A (en:Method) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1231824B (de) * | 1964-07-04 | 1967-01-05 | Danfoss As | Kontaktanordnung fuer ein elektronisches Festkoerperschaltelement und Verfahren zu seiner Herstellung |
| NL129867C (en:Method) * | 1964-08-07 | 1900-01-01 | ||
| US3506545A (en) * | 1967-02-14 | 1970-04-14 | Ibm | Method for plating conductive patterns with high resolution |
| US4134125A (en) * | 1977-07-20 | 1979-01-09 | Bell Telephone Laboratories, Incorporated | Passivation of metallized semiconductor substrates |
| JPS5713777A (en) | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
| US5091334A (en) * | 1980-03-03 | 1992-02-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
| US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JPS5721838A (en) * | 1980-07-15 | 1982-02-04 | Toshiba Corp | Semiconductor device |
| DE3517132A1 (de) * | 1985-05-11 | 1986-11-13 | Jürgen 6074 Rödermark Wisotzki | Halbleiterelement mit einem elektrisch leitend mit ihm verbundenen mikroelement sowie verfahren zur herstellung der verbindung |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE895199C (de) * | 1945-04-19 | 1953-11-02 | Telefunken Gmbh | Kontaktdetektor |
| NL99536C (en:Method) * | 1951-03-07 | 1900-01-01 | ||
| NL180750B (nl) * | 1952-08-20 | Bristol Myers Co | Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten. | |
| US2816847A (en) * | 1953-11-18 | 1957-12-17 | Bell Telephone Labor Inc | Method of fabricating semiconductor signal translating devices |
| US2845371A (en) * | 1953-11-27 | 1958-07-29 | Raytheon Mfg Co | Process of producing junctions in semiconductors |
| BE533785A (en:Method) * | 1953-12-01 | 1900-01-01 |
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0
- NL NL284599D patent/NL284599A/xx unknown
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1961
- 1961-05-26 DE DEST17870A patent/DE1173994B/de active Pending
-
1962
- 1962-05-18 US US195805A patent/US3271632A/en not_active Expired - Lifetime
- 1962-05-23 CH CH620662A patent/CH398804A/de unknown
- 1962-05-25 GB GB20204/62A patent/GB998386A/en not_active Expired
- 1962-05-25 BE BE618081A patent/BE618081A/nl unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE618081A (nl) | 1962-11-28 |
| GB998386A (en) | 1965-07-14 |
| CH398804A (de) | 1966-03-15 |
| US3271632A (en) | 1966-09-06 |
| DE1173994B (de) | 1964-07-16 |