NL280849A - - Google Patents

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Publication number
NL280849A
NL280849A NL280849DA NL280849A NL 280849 A NL280849 A NL 280849A NL 280849D A NL280849D A NL 280849DA NL 280849 A NL280849 A NL 280849A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of NL280849A publication Critical patent/NL280849A/xx

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48153Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
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    • H01L2224/4816Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/10251Elemental semiconductors, i.e. Group IV
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    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode
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    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor
    • H01L2924/13034Silicon Controlled Rectifier [SCR]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
NL280849D 1961-07-12 NL280849A (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2524361A GB968106A (en) 1961-07-12 1961-07-12 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
NL280849A true NL280849A (pl) 1900-01-01

Family

ID=10224528

Family Applications (1)

Application Number Title Priority Date Filing Date
NL280849D NL280849A (pl) 1961-07-12

Country Status (4)

Country Link
US (1) US3361943A (pl)
DE (1) DE1212215C2 (pl)
GB (1) GB968106A (pl)
NL (1) NL280849A (pl)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484660A (en) * 1963-09-20 1969-12-16 Gen Electric Sealed electrical device
FR1466427A (fr) * 1965-12-03 1967-01-20 Comp Generale Electricite Capot étanche pour dispositif semi-conducteur
DE1589496A1 (de) * 1967-01-26 1970-03-26 Bbc Brown Boveri & Cie Halbleiterelement mit abgeschraegter Seitenflaeche und Verfahren zum Herstellen
US3643136A (en) * 1970-05-22 1972-02-15 Gen Electric Glass passivated double beveled semiconductor device with partially spaced preform
DE2358937C3 (de) * 1973-11-27 1976-07-15 Licentia Gmbh Thyristor fuer hochspannung im kilovoltbereich
DE2537984C3 (de) * 1975-08-26 1981-07-16 Siemens AG, 1000 Berlin und 8000 München Thyristor
JPS5624972A (en) * 1979-08-07 1981-03-10 Mitsubishi Electric Corp Thyristor

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA509126A (en) * 1949-05-28 1955-01-11 Western Electric Company, Incorporated Semiconductor translating devices
GB774388A (en) * 1954-01-28 1957-05-08 Marconi Wireless Telegraph Co Improvements in or relating to semi-conducting amplifiers
NL111788C (pl) * 1956-06-18
US2927011A (en) * 1956-07-26 1960-03-01 Texas Instruments Inc Etching of semiconductor materials
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
US2878152A (en) * 1956-11-28 1959-03-17 Texas Instruments Inc Grown junction transistors
NL224173A (pl) * 1957-01-18
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
FR73531E (fr) * 1958-04-30 1960-08-22 Telecommunications Sa Réalisation d'un transistron au germanium obtenu par la méthode de double diffusion
FR1197172A (fr) * 1958-05-28 1959-11-27 Telecommunications Sa Procédé de fabrication applicable aux transistrons par diffusion utilisables en basse fréquence
NL134389C (pl) * 1958-07-02
US2951191A (en) * 1958-08-26 1960-08-30 Rca Corp Semiconductor devices
NL242556A (pl) * 1958-08-27
NL243218A (pl) * 1958-12-24
FR1228285A (fr) * 1959-03-11 1960-08-29 Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes
BE589705A (pl) * 1959-04-15
FR1273633A (fr) * 1959-11-21 1961-10-13 Siemens Ag Procédé d'obtention d'éléments semi-conducteurs
DE1839161U (de) * 1960-09-20 1961-10-12 Telefunken Patent Halbleiteranordnung.
BE615177A (pl) * 1961-03-17
US3255055A (en) * 1963-03-20 1966-06-07 Hoffman Electronics Corp Semiconductor device

Also Published As

Publication number Publication date
US3361943A (en) 1968-01-02
GB968106A (en) 1964-08-26
DE1212215C2 (de) 1974-03-28
DE1212215B (de) 1974-03-28

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AT14030B (pl)
AT13826B (pl)
AT11454B (pl)
AT13736B (pl)
AT2432B (pl)
AT10975B (pl)
AT10903B (pl)
AT10775B (pl)
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AT11763B (pl)
AT2431B (pl)