NL280849A - - Google Patents

Info

Publication number
NL280849A
NL280849A NL280849DA NL280849A NL 280849 A NL280849 A NL 280849A NL 280849D A NL280849D A NL 280849DA NL 280849 A NL280849 A NL 280849A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of NL280849A publication Critical patent/NL280849A/xx

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
NL280849D 1961-07-12 NL280849A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2524361A GB968106A (en) 1961-07-12 1961-07-12 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
NL280849A true NL280849A (en:Method) 1900-01-01

Family

ID=10224528

Family Applications (1)

Application Number Title Priority Date Filing Date
NL280849D NL280849A (en:Method) 1961-07-12

Country Status (4)

Country Link
US (1) US3361943A (en:Method)
DE (1) DE1212215C2 (en:Method)
GB (1) GB968106A (en:Method)
NL (1) NL280849A (en:Method)

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US3484660A (en) * 1963-09-20 1969-12-16 Gen Electric Sealed electrical device
FR1466427A (fr) * 1965-12-03 1967-01-20 Comp Generale Electricite Capot étanche pour dispositif semi-conducteur
DE1589496A1 (de) * 1967-01-26 1970-03-26 Bbc Brown Boveri & Cie Halbleiterelement mit abgeschraegter Seitenflaeche und Verfahren zum Herstellen
US3643136A (en) * 1970-05-22 1972-02-15 Gen Electric Glass passivated double beveled semiconductor device with partially spaced preform
DE2358937C3 (de) * 1973-11-27 1976-07-15 Licentia Gmbh Thyristor fuer hochspannung im kilovoltbereich
DE2537984C3 (de) * 1975-08-26 1981-07-16 Siemens AG, 1000 Berlin und 8000 München Thyristor
DE2849184A1 (de) 1978-11-13 1980-05-22 Bbc Brown Boveri & Cie Verfahren zur herstellung eines scheibenfoermigen silizium-halbleiterbauelementes mit negativer anschraegung
JPS5624972A (en) * 1979-08-07 1981-03-10 Mitsubishi Electric Corp Thyristor

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GB774388A (en) * 1954-01-28 1957-05-08 Marconi Wireless Telegraph Co Improvements in or relating to semi-conducting amplifiers
BE558436A (en:Method) * 1956-06-18
US2927011A (en) * 1956-07-26 1960-03-01 Texas Instruments Inc Etching of semiconductor materials
US2980830A (en) * 1956-08-22 1961-04-18 Shockley William Junction transistor
US2878152A (en) * 1956-11-28 1959-03-17 Texas Instruments Inc Grown junction transistors
NL113266C (en:Method) * 1957-01-18
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
FR73531E (fr) * 1958-04-30 1960-08-22 Telecommunications Sa Réalisation d'un transistron au germanium obtenu par la méthode de double diffusion
FR1197172A (fr) * 1958-05-28 1959-11-27 Telecommunications Sa Procédé de fabrication applicable aux transistrons par diffusion utilisables en basse fréquence
NL240714A (en:Method) * 1958-07-02
US2951191A (en) * 1958-08-26 1960-08-30 Rca Corp Semiconductor devices
NL242556A (en:Method) * 1958-08-27
NL243218A (en:Method) * 1958-12-24
FR1228285A (fr) * 1959-03-11 1960-08-29 Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes
NL155412C (en:Method) * 1959-04-15
FR1273633A (fr) * 1959-11-21 1961-10-13 Siemens Ag Procédé d'obtention d'éléments semi-conducteurs
DE1839161U (de) * 1960-09-20 1961-10-12 Telefunken Patent Halbleiteranordnung.
NL276059A (en:Method) * 1961-03-17
US3255055A (en) * 1963-03-20 1966-06-07 Hoffman Electronics Corp Semiconductor device

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DE1212215B (de) 1974-03-28
US3361943A (en) 1968-01-02
DE1212215C2 (de) 1974-03-28
GB968106A (en) 1964-08-26

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