NL275889A - - Google Patents
Info
- Publication number
- NL275889A NL275889A NL275889DA NL275889A NL 275889 A NL275889 A NL 275889A NL 275889D A NL275889D A NL 275889DA NL 275889 A NL275889 A NL 275889A
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1961S0072962 DE1262979B (de) | 1961-03-14 | 1961-03-14 | Verfahren und Vorrichtung zum Herstellen einkristalliner Schichten durch Aufdampfen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL275889A true NL275889A (en:Method) |
Family
ID=7503587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL275889D NL275889A (en:Method) | 1961-03-14 |
Country Status (5)
| Country | Link |
|---|---|
| CH (1) | CH395680A (en:Method) |
| DE (1) | DE1262979B (en:Method) |
| FR (1) | FR1317607A (en:Method) |
| GB (1) | GB948997A (en:Method) |
| NL (1) | NL275889A (en:Method) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1298512B (de) * | 1964-03-13 | 1969-07-03 | Telefunken Patent | Einrichtung zum Aufdampfen einkristalliner Schichten auf Unterlagen |
| US3514320A (en) * | 1969-02-10 | 1970-05-26 | William H Vaughan | Method of forming single crystal films by nonepitaxial growth |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE514927A (en:Method) * | 1952-01-22 | |||
| DE1057845B (de) * | 1954-03-10 | 1959-05-21 | Licentia Gmbh | Verfahren zur Herstellung von einkristallinen halbleitenden Verbindungen |
| DE1054802B (de) * | 1956-03-05 | 1959-04-09 | Westinghouse Electric Corp | Verfahren zur Verdampfung von Stoffen, insbesondere zur Erzeugung der UEbergangszonen (junctions) von Transistoren |
| BE555438A (en:Method) * | 1956-03-05 |
-
0
- NL NL275889D patent/NL275889A/xx unknown
- FR FR1317607D patent/FR1317607A/fr not_active Expired
-
1961
- 1961-03-14 DE DE1961S0072962 patent/DE1262979B/de active Pending
-
1962
- 1962-03-01 CH CH254362A patent/CH395680A/de unknown
- 1962-03-13 GB GB953462A patent/GB948997A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB948997A (en) | 1964-02-05 |
| DE1262979B (de) | 1968-03-14 |
| FR1317607A (en:Method) | 1963-05-08 |
| CH395680A (de) | 1965-07-15 |