NL268241A - - Google Patents

Info

Publication number
NL268241A
NL268241A NL268241DA NL268241A NL 268241 A NL268241 A NL 268241A NL 268241D A NL268241D A NL 268241DA NL 268241 A NL268241 A NL 268241A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL268241A publication Critical patent/NL268241A/xx

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/02Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00Coating apparatus
    • Y10S118/90Semiconductor vapor doping
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/052Face to face deposition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
NL268241D 1960-09-09 NL268241A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54872A US3099579A (en) 1960-09-09 1960-09-09 Growing and determining epitaxial layer thickness

Publications (1)

Publication Number Publication Date
NL268241A true NL268241A (https=)

Family

ID=21994045

Family Applications (1)

Application Number Title Priority Date Filing Date
NL268241D NL268241A (https=) 1960-09-09

Country Status (5)

Country Link
US (1) US3099579A (https=)
BE (1) BE607571A (https=)
GB (1) GB997219A (https=)
NL (1) NL268241A (https=)
SE (1) SE305963B (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3233174A (en) * 1960-12-06 1966-02-01 Merck & Co Inc Method of determining the concentration of active impurities present in a gaseous decomposable semiconductor compound
US3220896A (en) * 1961-07-17 1965-11-30 Raytheon Co Transistor
NL283619A (https=) * 1961-10-06
BE632105A (https=) * 1962-05-09
NL296876A (https=) * 1962-08-23
US3447977A (en) * 1962-08-23 1969-06-03 Siemens Ag Method of producing semiconductor members
US3316130A (en) * 1963-05-07 1967-04-25 Gen Electric Epitaxial growth of semiconductor devices
US3326178A (en) * 1963-09-12 1967-06-20 Angelis Henry M De Vapor deposition means to produce a radioactive source
US3322979A (en) * 1964-03-31 1967-05-30 Texas Instruments Inc Thermionic energy converter
US3407783A (en) * 1964-08-31 1968-10-29 Emil R. Capita Vapor deposition apparatus
DE1262244B (de) * 1964-12-23 1968-03-07 Siemens Ag Verfahren zum epitaktischen Abscheiden einer kristallinen Schicht, insbesondere aus Halbleitermaterial
US3351757A (en) * 1965-02-18 1967-11-07 Bell Telephone Labor Inc Method of testing the internal friction of synthetic quartz crystal by the use of two different frequencies of infrared
US3338761A (en) * 1965-03-31 1967-08-29 Texas Instruments Inc Method and apparatus for making compound materials
US3473977A (en) * 1967-02-02 1969-10-21 Westinghouse Electric Corp Semiconductor fabrication technique permitting examination of epitaxially grown layers
US3399651A (en) * 1967-05-26 1968-09-03 Philco Ford Corp Susceptor for growing polycrystalline silicon on wafers of monocrystalline silicon
US3465150A (en) * 1967-06-15 1969-09-02 Frances Hugle Method of aligning semiconductors
US3601492A (en) * 1967-11-20 1971-08-24 Monsanto Co Apparatus for measuring film thickness
US3620814A (en) * 1968-08-09 1971-11-16 Bell Telephone Labor Inc Continuous measurement of the thickness of hot thin films
US3868924A (en) * 1969-06-30 1975-03-04 Siemens Ag Apparatus for indiffusing dopants into semiconductor material
US4020791A (en) * 1969-06-30 1977-05-03 Siemens Aktiengesellschaft Apparatus for indiffusing dopants into semiconductor material
US4203799A (en) * 1975-05-30 1980-05-20 Hitachi, Ltd. Method for monitoring thickness of epitaxial growth layer on substrate
NL7605234A (nl) * 1976-05-17 1977-11-21 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
NL7710164A (nl) * 1977-09-16 1979-03-20 Philips Nv Werkwijze ter behandeling van een eenkristal- lijn lichaam.
JP5444823B2 (ja) * 2009-05-01 2014-03-19 信越半導体株式会社 Soiウェーハの検査方法
CN102005401A (zh) * 2010-09-10 2011-04-06 上海宏力半导体制造有限公司 外延薄膜厚度测量方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2726173A (en) * 1953-04-03 1955-12-06 Itt Method and apparatus for measuring film thickness
US2898248A (en) * 1957-05-15 1959-08-04 Ibm Method of fabricating germanium bodies

Also Published As

Publication number Publication date
SE305963B (https=) 1968-11-11
GB997219A (en) 1965-07-07
BE607571A (https=)
US3099579A (en) 1963-07-30

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